KINETICS OF SUBSTITUTION REACTIONS OF OLEFINS IN TRANS-DICHLORO (ETA ²-2-METHYL-2-BUTENE) PLATINUM(II) COMPLEXES CONTAINING PYRIDINE OR ANILINE DERIVATIVESMIYA S; KASHIWABARA K; SAITO K et al.1980; INORG. CHEM.; USA; DA. 1980; VOL. 19; NO 1; PP. 98-101; BIBL. 13 REF.Article

ABSORPTION AND CIRCULAR DICHROISM STUDIES OF RHODIUM(I) COMPLEXES CONTAINING CHIRAL ISOCYANIDESMIYA S; YAMAMOTO Y; YAMAKI H et al.1982; INORG. CHEM.; ISSN 0020-1669; USA; DA. 1982; VOL. 21; NO 4; PP. 1486-1488; BIBL. 9 REF.Article

BIDENTATE ISOCYANIDES. I: SYNTHESIS OF DISOCYANOCYCLOHEXANES AND SOME OF THEIR COMPLEXESOHTANI Y; MIYA S 'Y; YAMAMOTO Y et al.1981; INORG. CHIM. ACTA; ISSN 0020-1693; ITA; DA. 1981; VOL. 53; NO 1; PP. L53-L55; BIBL. 10 REF.Article

Cobalt metallacycles. XVI: X-ray structures of 4-iminocobaltacyclobutene complexesWAKATSUKI, Y; MIYA, S.-Y; YAMAZAKI, H et al.Journal of the Chemical Society. Dalton transactions. 1986, Num 6, pp 1207-1212, issn 0300-9246Article

Photochemical reactivity of spirodienone obtained by oxidation of bis(2-hydroxy-3,5-di-t-butylphenyl)methanoneIZUOKA, A; MIYA, S; SUGAWARA, T et al.Tetrahedron letters. 1988, Vol 29, Num 44, pp 5673-5676, issn 0040-4039Article

On the mechanism of oligomerization of propylene by (C₅Me₅)₂MCl₂/methylalumoxane catalysts (M=Zr, Hf)MISE, T; KAGEYAMA, A; MIYA, S et al.Chemistry Letters. 1991, Num 9, pp 1525-1528, issn 0366-7022Article

Electron beam-enhanced etching of InAs in Cl₂ gas and novel in situ patterning of GaAs with an InAs mask layerMIYA, S; YOSHIDA, T; KADOYA, Y et al.Applied physics letters. 1993, Vol 63, Num 13, pp 1789-1791, issn 0003-6951Article

ESR observation of averaged-valence and charge-density-wave states in quasi-one-dimensional halogen-bridged binuclear metal complexesMARUMOTO, K; TANAKA, H; KOZAKI, S et al.Solid state communications. 2001, Vol 120, Num 2-3, pp 101-106, issn 0038-1098Article

Charge fluctuation in MMX chain compounds, R₄[Pt₂(pop)₄I]YAMASHITA, M; MIYA, S; KAWASHIMA, T et al.Synthetic metals. 1999, Vol 103, Num 1-3, pp 2164-2165, issn 0379-6779Conference Paper

Optimization of growth parameters for MOVPE-grown GaSb and Ga_1―xIn_xSbMIYA, S. S; WAGENER, V; BOTHA, J. R et al.Physica. B, Condensed matter. 2012, Vol 407, Num 10, pp 1611-1614, issn 0921-4526, 4 p.Conference Paper

AlGaAsSb buffer/barrier on GaAs substrate for InAs channel devices with high electron mobility and practical reliabilityMIYA, S; MURAMATSU, S; KUZE, N et al.Journal of electronic materials. 1996, Vol 25, Num 3, pp 415-420, issn 0361-5235Conference Paper