HALL-BEWEGLICHKEITSMESSUNGEN AUF DUENNEN HALBLEITERSCHICHTEN. = MESURES DE MOBILITE DE HALL SUR DES COUCHES MINCES SEMICONDUCTRICESDE MEY G; VAN CAMPENHOUT J.1975; A.T.M. MESSTECH. PRAXIS; DTSCH.; DA. 1975; NO 471; PP. 55-56; BIBL. 19 REF.Article

GALVANOMAGNETIC PROPERTIES OF EVAPORATED TELLURIUM FILMS.CHAUDHURI AK; BOSE HN.1975; INDIAN J. PHYS.; INDIA; DA. 1975; VOL. 49; NO 10; PP. 783-790; BIBL. 14 REF.Article

A CORBINO DISK APPARATUS TO MEASURE HALL MOBILITIES IN AMORPHOUS SEMICONDUCTORSCARVER GP.1972; REV. SCI. INSTRUM.; U.S.A.; DA. 1972; VOL. 43; NO 9; PP. 1257-1263; BIBL. BIBL. (10 REF.Serial Issue

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MICROWAVE HALL MEASUREMENT TECHNIQUES ON LOW MOBILITY SEMICONDUCTORS AND INSULATORS. I. ANALYSIS.SAYED MM; WESTGATE CR.1975; REV. SCI. INSTRUM.; U.S.A.; DA. 1975; VOL. 46; NO 8; PP. 1074-1079; BIBL. 27 REF.Article

GALVANOMAGNETIC PROPERTIES OF BI₂SE₃ WITH FREE CARRIER DENSITIES BELOW 5 X 10¹⁷CM^-3.KOHLER H; FABRICIUS A.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 71; NO 2; PP. 487-496; ABS. ALLEM.; BIBL. 15 REF.Article

HALL MOBILITY MEASUREMENTS IN HF DOPED ICE.HAM JS; ROSE DN.1974; J. CHEM. PHYS.; U.S.A.; DA. 1974; VOL. 60; NO 12; PP. 4778-4779; BIBL. 10 REF.Article

METHODE A 2 FREQUENCES POUR DES MESURES DE F.E.M. DE HALL DANS DES MATERIAUX A RESISTANCE ELEVEE AVEC UNE BASSE MOBILITE DES PORTEURS DE CHARGEALEKSANDROV AL; VEDENEEV AS; GULYAEV IB et al.1982; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1982; NO 2; PP. 163-166; BIBL. 7 REF.Article

EFFECTIVE P-TYPE DOPING OF DIAMOND BY BORON ION IMPLANTATIONBRAUNSTEIN G; KALISH R.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 4; PP. 2106-2108; BIBL. 15 REF.Article

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THE HALL MOBILITY OF POLYCRYSTALLINE GASB FILMSPATEL SM; MAHAJAN MD.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 59; NO 2; PP. K199-K202; BIBL. 9 REF.Article

RELATIONSHIP OF MBE GROWTH PARAMETERS WITH THE ELECTRICAL PROPERTIES OF THIN (100) INAS EPILAYERSGRANGE JD; PARKER EHC; KING RM et al.1979; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1979; VOL. 12; NO 9; PP. 1601-1612; BIBL. 1 P.Article

HALL MOBILITY IN STRONTIUM TITANATE AT HIGH TEMPERATURES.PERLUZZO G; DESTRY J.1976; CANAD. J. PHYS.; CANADA; DA. 1976; VOL. 54; NO 14; PP. 1482-1487; ABS. FR.; BIBL. 22 REF.Article

MOBILITE DE HALL DES PORTEURS MAJORITAIRES DANS LE GERMANIUMMIERIN A YA; KULAKOV VM; ULMANIS UA et al.1976; LATV. P.S.R. ZINAT. AKAD. VEST., FIZ. TEH. ZINAT. SER.; S.S.S.R.; DA. 1976; NO 5; PP. 31-36; ABS. ANGL.; BIBL. 15 REF.Article

EFFECTS OF UNIAXIAL STRESS ON THE ELECTRICAL PROPERTIES IN CDS SINGLE CRYSTALS.MATSUURA K; TSURUMI I.1975; J. PHYS. SOC. JAP.; JAP.; DA. 1975; VOL. 39; NO 6; PP. 1543-1546; BIBL. 23 REF.Article

MODIFICATION OF PHONON DISTRIBUTION IN DEGENERATE SEMICONDUCTORS BY HIGH ELECTRIC FIELDS: EFFECT ON TRANSPORT COEFFICIENTS.SHARMA SK; AGARWAL DB.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 69; NO 1; PP. 169-174; ABS. ALLEM.; BIBL. 7 REF.Article

QUANTUM SIZE EFFECT IN THIN CD₃AS₂ FILMS.ZDANOWICZ L; ZDANOWICZ W; POCZTOWSKI G et al.1975; THIN SOLID FILMS; NETHERL.; DA. 1975; VOL. 28; NO 2; PP. 345-349; BIBL. 12 REF.Article

OBSERVATION OF METASTABLE DONOR STATES IN N-TYPE INSB UNDER PRESSURE.KONCZYKOWSKI M; POROWSKI S; CHROBOCZEK J et al.1974; HIGH TEMPER.-HIGH PRESS.; G.B.; DA. 1974; VOL. 6; NO 1; PP. 111-114; BIBL. 4 REF.Article

HALL EFFECT MEASUREMENTS IN HIGH-TEMPERATURE DEPOSITED AND HEAT TREATED FILMS OF INTE AND INSEKRISHNA SASTRY DV; JAYARAMA REDDY P.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 75; NO 2; PP. K183-K185; BIBL. 4 REF.Article

MIXED SCATTERING MECHANISM OF FREE CURRENT CARRIERS IN SNBI₄TE₇ SINGLE CRYSTALSTICHY L; FRUMAR M; KINCL M et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 64; NO 2; PP. 461-466; ABS. GER; BIBL. 10 REF.Article

INFLUENCE DE LA STRUCTURE FRAGMENTAIRE SUR LES EFFETS GALVANOMAGNETIQUES DANS LES COUCHES MINCES SEMICONDUCTRICESTKHORIK YU O.1978; DOP. AKAD. NAUK UKRAJIN. R.S.R., A; S.S.S.R.; DA. 1978; NO 4; PP. 338-341; ABS. ANGL.; BIBL. 15 REF.Article

HALL MOBILITY IN SINGLE CRYSTALS OF NIO AS A FUNCTION OF TEMPERATURE AND DEVIATION FROM STOICHIOMETRY.FRIEDMAN F; WEICHMAN FL; TANNHAUSER DS et al.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 27; NO 1; PP. 273-279; ABS. ALLEM.; BIBL. 20 REF.Article

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