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Results 1 to 25 of 1326

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DIRECT DETERMINATION OF HALL MOBILITY OF PHOTOELECTRONS IN THE FERROMAGNETIC SEMICONDUCTOR EUO+KAJITA K; MASUMI T.1972; APPL. PHYS. LETTERS; U.S.A.; DA. 1972; VOL. 21; NO 7; PP. 332-334; BIBL. 4 REF.Serial Issue

HALL-BEWEGLICHKEITSMESSUNGEN AUF DUENNEN HALBLEITERSCHICHTEN. = MESURES DE MOBILITE DE HALL SUR DES COUCHES MINCES SEMICONDUCTRICESDE MEY G; VAN CAMPENHOUT J.1975; A.T.M. MESSTECH. PRAXIS; DTSCH.; DA. 1975; NO 471; PP. 55-56; BIBL. 19 REF.Article

GALVANOMAGNETIC PROPERTIES OF EVAPORATED TELLURIUM FILMS.CHAUDHURI AK; BOSE HN.1975; INDIAN J. PHYS.; INDIA; DA. 1975; VOL. 49; NO 10; PP. 783-790; BIBL. 14 REF.Article

A CORBINO DISK APPARATUS TO MEASURE HALL MOBILITIES IN AMORPHOUS SEMICONDUCTORSCARVER GP.1972; REV. SCI. INSTRUM.; U.S.A.; DA. 1972; VOL. 43; NO 9; PP. 1257-1263; BIBL. BIBL. (10 REF.Serial Issue

VARIATION THERMIQUE DE LA MOBILITE DE HALL DANS LE MODELE DU POLARON DE PETIT RAYON: TEMPERATURES INTERMEDIAIRES ET HAUTES TEMPERATURESBRYKSIN VV; FIRSOV YU A.1974; FIZ. TVERD. TELA; S.S.S.R.; DA. 1974; VOL. 16; NO 7; PP. 1941-1952; BIBL. 22 REF.Article

HALL COEFFICIENT MEASUREMENTS IN MATERIALS OF EXTREMELY SMALL HALL ANGLE USING A MODIFIED HELICON TECHNIQUE.ROSENTHAL MD; MAXFIELD BW.1975; REV. SCI. INSTRUM.; U.S.A.; DA. 1975; VOL. 46; NO 5; PP. 565-568; BIBL. 10 REF.Article

CALCULATION OF HALL MOBILITYPRICE PJ.1972; PHYS. REV., B; U.S.A.; DA. 1972; VOL. 6; NO 12; PP. 4882-4883; BIBL. 5 REF.Serial Issue

GALVANOMAGNETIC PROPERTIES OF ANISOTROPIC SEMICONDUCTORS OF THE P-TE TYPE.TOMCHUK PM; SHENDEROVSKII VA; GORLEY PN et al.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 72; NO 1; PP. 41-50; ABS. RUSSE; BIBL. 29 REF.Article

MICROWAVE HALL MEASUREMENT TECHNIQUES ON LOW MOBILITY SEMICONDUCTORS AND INSULATORS. I. ANALYSIS.SAYED MM; WESTGATE CR.1975; REV. SCI. INSTRUM.; U.S.A.; DA. 1975; VOL. 46; NO 8; PP. 1074-1079; BIBL. 27 REF.Article

GALVANOMAGNETIC PROPERTIES OF BI2SE3 WITH FREE CARRIER DENSITIES BELOW 5 X 1017CM-3.KOHLER H; FABRICIUS A.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 71; NO 2; PP. 487-496; ABS. ALLEM.; BIBL. 15 REF.Article

HALL MOBILITY MEASUREMENTS IN HF DOPED ICE.HAM JS; ROSE DN.1974; J. CHEM. PHYS.; U.S.A.; DA. 1974; VOL. 60; NO 12; PP. 4778-4779; BIBL. 10 REF.Article

METHODE A 2 FREQUENCES POUR DES MESURES DE F.E.M. DE HALL DANS DES MATERIAUX A RESISTANCE ELEVEE AVEC UNE BASSE MOBILITE DES PORTEURS DE CHARGEALEKSANDROV AL; VEDENEEV AS; GULYAEV IB et al.1982; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1982; NO 2; PP. 163-166; BIBL. 7 REF.Article

MAGNETORESISTANCE IN CADMIUM PHOSPHIDE -CDZP2.ZDANOWICZ W; BODNAR J.1976; ACTA PHYS. POLON., A; POLOGNE; DA. 1976; VOL. 49; NO 1; PP. 3-7; BIBL. 11 REF.Article

MICROWAVE HALL MEASUREMENT TECHNIQUES ON LOW MOBILITY SEMICONDUCTORS AND INSULATORS. II. EXPERIMENTAL PROCEDURES.SAYED MM; WESTGATE CR.1975; REV. SCI. INSTRUM.; U.S.A.; DA. 1975; VOL. 46; NO 8; PP. 1080-1085; BIBL. 13 REF.Article

HALL MOBILITY IN DIELECTRICALLY ISOLATED SINGLE-CRYSTAL SILICON FILMS DEFINED BY ELECTROCHEMICAL ETCHING.KAMINS TI.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 7; PP. 667-674; BIBL. 20 REF.Article

A COMPARISON OF THE SEMICONDUCTING PROPERTIES OF THIN FILMS OF SILICON ON SAPPHIRE AND SPINEL.CULLEN GW; CORBOY JF.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 10; PP. 1345-1350; BIBL. 29 REF.Article

THE ELECTRIC AND PHOTOELECTRIC PROPERTIES OF TLSBSE2 CRYSTALS IN THE REGION OF IMPURITY CONDUCTIONGITSU DV; GRINCHESHEN IN; POPOVICH NS et al.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 76; NO 1; PP. K5-K7; BIBL. 2 REF.Article

ANALYSIS OF SYMMETRICAL HALL PLATES WITH FINITE CONTACTSVERSNEL W.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 7; PP. 4659-4666; BIBL. 13 REF.Article

ELECTRICAL CONDUCTION IN THE ZNSIAS2-XPX SYSTEM.STROUD RF; CLARK WC.1976; J. PHYS. D.; G.B.; DA. 1976; VOL. 9; NO 2; PP. 273-277; BIBL. 13 REF.Article

FEATURES OF INDIUM ANTIMONIDE FILMS.KRAVCHENKO AF; MOROZOV BV; SKOK EM et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 35; NO 2; PP. 755-759; ABS. RUSSE; BIBL. 15 REF.Article

SOME STUDIES ON THE ELECTRICAL PROPERTIES OF ANTIMONY FILMS.BARUA DC; BARUA K.1975; INDIAN J. PHYS.; INDIA; DA. 1975; VOL. 49; NO 8; PP. 603-614; BIBL. 22 REF.Article

DIFFUSION ELECTRONS-TROUS ET RECOMBINAISON DES PORTEURS MINORITAIRES DANS LE SILICIUM A NIVEAU D'EXCITATION ELEVEVAJTKUS YU; GRIVITSKAS V; STORASTA YU et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 7; PP. 1339-1345; BIBL. 27 REF.Article

ELECTRON-LATTICE INTERACTION IN GALLIUM SELENIDE.SCHMID P; VOITCHOVSKY JP.1974; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1974; VOL. 65; NO 1; PP. 249-254; ABS. FR.; BIBL. 15 REF.Article

EFFECTIVE P-TYPE DOPING OF DIAMOND BY BORON ION IMPLANTATIONBRAUNSTEIN G; KALISH R.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 4; PP. 2106-2108; BIBL. 15 REF.Article

GROWTH AND ELECTRICAL PROPERTIES OF CUPROUS TELLURIDE THIN FILMSDAWAR AL; ANIL KUMAR; PARTAP KUMAR et al.1983; JOURNAL OF THE LESS-COMMON METALS; ISSN 0022-5088; CHE; DA. 1983; VOL. 91; NO 1; PP. 83-88; BIBL. 26 REF.Article

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