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ENHANCEMENT OF ELECTRON VELOCITY IN MODULATION-DOPED (AL, GA) AS/GAAS FETS AT CRYOGENIC TEMPERATURESDRUMMOND TJ; SU SL; LYONS WG et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 24; PP. 1057-1058; BIBL. 8 REF.Article

MOBILITY, LIFETIME AND DIFFUSION LENGTH IN POLYCRYSTALLINE MATERIALSSEN K.1983; INTERNATIONAL JOURNAL OF ELECTRONICS THEORETICAL & EXPERIMENTAL; ISSN 0020-7217; GBR; DA. 1983; VOL. 54; NO 2; PP. 341-343; BIBL. 7 REF.Article

COMMENT ON : "ELECTRON MOBILITIES BASED ON AN EXACT NUMERICAL ANALYSIS OF THE DIELECTRIC-FUNCTION-DEPENDENT LINEARIZED POISSON'S EQUATION FOR THE POTENTIAL OF IMPURITY IONS IN SEMICONDUCTORS"CSAVINSZKY P; MORROW RA; SCARFONE LM et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 8; PP. 4263-4268; BIBL. DISSEM.Article

HALL EFFECT NOISE: FLUCTUATIONS IN NUMBER OR MOBILITY.KLEINPENNING TGM; BELL DA.1976; PHYSICA B+C; PAYS-BAS; DA. 1976; VOL. 81; NO 2; PP. 301-304; BIBL. 5 REF.Article

ELECTRON MOBILITIES AND RANGES IN LIQUID HYDROCARBONS. CYCLIC AND POLYCYCLIC, SATURATED AND UNSATURATED COMPOUNDS.SHINSAKA K; DODELET JP; FREEMAN GR et al.1975; CANAD. J. CHEM.; CANADA; DA. 1975; VOL. 53; NO 18; PP. 2714-2728; ABS. FR.; BIBL. 29 REF.Article

ON THE CHARGED-IMPURITY-LIMITED MOBILITY FOR A VERY PURE SEMICONDUCTOR.FUJITA S.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 17; NO 8; PP. 915-917; BIBL. 7 REF.Article

THE CONDUCTIVITY OF CRYSTALLINE NAI.KOSTOPOULOS D; VAROTSOS P; MOURIKIS S et al.1975; CANAD. J. PHYS.; CANADA; DA. 1975; VOL. 53; NO 14; PP. 1318-1320; ABS. FR.; BIBL. 13 REF.Article

ELECTRON MOBILITY AND CONDUCTION STATE ENERGY IN HYDROCARBON MIXTURES.NYIKOS L; SCHILLER R.1975; CHEM. PHYS. LETTERS; NETHERL.; DA. 1975; VOL. 34; NO 1; PP. 128-129; BIBL. 11 REF.Article

ROOM TEMPERATURE ELECTRON DRIFT MOBILITIES IN 1,4-DIBROMONAPHTALENE.SWENBERG CE; MARKEVICH D; GEACINTOV NE et al.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 29; NO 2; PP. 651-657; ABS. ALLEM.; BIBL. 19 REF.Article

ELEKTROFOTOGRAFISCHE VERFAHREN. II. MIGRATIONSVERFAHREN. = METHODES ELECTROPHOTOGRAPHIQUES. II. METHODE PAR MIGRATIONKAPLER R; EPPERLEIN J.1975; BILD U. TON; DTSCH.; DA. 1975; VOL. 28; NO 5; PP. 135-146; ABS. RUSSE ANGL. FR.; BIBL. 58 REF.Article

MOBILITE DES PORTEURS DE CHARGE DANS UNE COUCHE D'INVERSION SUPERFICIELLE PARTIELLEMENT AMORPHISEE D'UN SEMICONDUCTEURBEZAK V; KEDRO M.1975; ELECTROTECH. CAS.; CESKOSL.; DA. 1975; VOL. 26; NO 4; PP. 290-296; ABS. RUSSE ALLEM. ANGL.; BIBL. 7 REF.Article

APPAREIL A LECTURE DIRECTE POUR LA MESURE DE LA MOBILITE DES PORTEURS DE CHARGE DANS LES SEMICONDUCTEURSSOKOLOV YU F; STEPANOV BG; PETROCHENOK NI et al.1974; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1974; NO 5; PP. 212-213; BIBL. 6 REF.Article

CHARGE-CARRIER MOBILITIES IN SUPERFLUID HELIUM UNDER PRESSURE.BRODY B.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 11; NO 1; PP. 170-177; BIBL. 24 REF.Article

PRESSURE DEPENDENCE OF CHARGE CARRIER MOBILITIES IN SUPERFLUID HELIUM.OSTERMEIER RM.1973; PHYS. REV., A; U.S.A.; DA. 1973; VOL. 8; NO 1; PP. 514-529; BIBL. 47 REF.Article

EFFECTIVE-MASS THEORY FOR CARRIERS IN GRADED MIXED SEMICONDUCTORS.LEIBLER L.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 12; NO 10; PP. 4443-4451; BIBL. 20 REF.Article

ELECTRON MOBILITY IN EVAPORATED LAYERS OF AS2S3.CDI2.BANERJI J; HIRSCH J.1975; J. PHYS. C; G.B.; DA. 1975; VOL. 8; NO 21; PP. L473; BIBL. 2 REF.Article

NOISE IN SINGLE AND DOUBLE INJECTION CURRENTS IN SOLIDS (II).NICOLET MA; BILGER HR; ZIJLSTRA RJJ et al.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 70; NO 2; PP. 415-438; BIBL. 1 P. 1/2Article

CRITICAL BEHAVIOR OF ION MOBILITIES NEAR THE SUPERFLUID TRANSITION.GOODSTEIN D; SAVOIA A; SCARAMUZZI F et al.1974; PHYS. REV., A; U.S.A.; DA. 1974; VOL. 9; NO 5; PP. 2151-2166; BIBL. 20 REF.Article

MAGNETODIODE MODEL WITH GRADATION OF LIFETIME AND MOBILITYPFLEIDERER H.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 53; NO 1; PP. 187-194; ABS. GER; BIBL. 30 REF.Article

TEMPERATURE DEPENDENCE OF THE HIGH FIELD VELOCITY OF ELECTRONS IN N GAAS.HOUSTON PA; EVANS AGR.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 10; PP. 210-211; BIBL. 2 REF.Article

METHODES DE MESURE DES MOBILITES DES PORTEURS DANS LES DIELECTRIQUES. II. DIELECTRIQUES SOLIDESTOMASZEWICZ W; JACHYM B.1975; ZESZ. NAUK. POLITECH. GDANSK., FIZ.; POLSKA; DA. 1975; NO 17; PP. 77-104; ABS. ANGL. RUSSE; BIBL. 1 P. 1/2Article

ACOUSTIC MOBILITY AND NONPARABOLICITY IN SEMICONDUCTORS.REGGIANI L.1975; LETTERE NUOVO CIMENTO; ITAL.; DA. 1975; VOL. 13; NO 15; PP. 563-567; BIBL. 18 REF.Article

DRIFT MOBILITIES OF HOLES AND ELECTRONS IN NAPHTHALENE SINGLE CRYSTALSMEY W; HERMANN AM.1973; PHYS. REV., B; U.S.A.; DA. 1973; VOL. 7; NO 4; PP. 1652-1657; BIBL. 24 REF.Serial Issue

DIFFUSION OF BORON FROM SHALLOW ION IMPLANTS IN SILICONWAGNER S.1972; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1972; VOL. 119; NO 11; PP. 1570-1576; BIBL. 19 REF.Serial Issue

CALCULATION OF HALL MOBILITYPRICE PJ.1972; PHYS. REV., B; U.S.A.; DA. 1972; VOL. 6; NO 12; PP. 4882-4883; BIBL. 5 REF.Serial Issue

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