Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("MODE ENRICHISSEMENT")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 615

  • Page / 25

Export

Selection :

  • and

LOW VOLTAGE HIGH PERFORMANCE E/D MOS LOGICCHOI DH; SALAMA CAT.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 23; PP. 879-880; BIBL. 8 REF.Article

ION IMPLANTED GAAS ENHANCEMENT MODE JFET'S.VODICKA VW.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 625-628; BIBL. 5 REF.Conference Paper

THRESHOLD VOLTAGE CHARACTERISTICS OF DOUBLE-BORON-IMPLANTED ENHANCEMENT-MODE MOSFETS.WANG PP; SPENCER OS.1975; I.B.M. J. RES. DEVELOP.; U.S.A.; DA. 1975; VOL. 19; NO 6; PP. 530-538; BIBL. 19 REF.Article

MODELL DES ENHANCEMENT-TRANSISTORS UNTER BERUECKSICHTIGUNG DER SUBSTRATVORSPANNUNG = MODELE REPRESENTATIF DU TRANSISTOR MOS A ENRICHISSEMENT TENANT COMPTE D'UNE TENSION DE POLARISATION DU SUBSTRATPOSDZIECH G.1981; NACHRITENTECH., ELEKTRON.; ISSN 0323-4657; DDR; DA. 1981; VOL. 31; NO 5; PP. 181-183; ABS. RUS/ENG/FRE; BIBL. 4 REF.Article

EMPIRISCHES MODELL DES ENHANCEMENT-TRANSISTORS MIT KURZEM KANAL = MODELE EMPIRIQUE POUR LE TRANSISTOR A ENRICHISSEMENT A CANAL COURTPOSDZIECH G.1980; NACHR.-TECH., ELEKTRON.; DDR; DA. 1980; VOL. 30; NO 3; PP. 111-112; ABS. RUS/ENG; BIBL. 11 REF.Article

COMPUTER GERECHTE MODELLFAMILIE FUER INTEGRIERTE MOS-TRANSISTOREN. I: ANREICHERUNGSTRANSSISTOR = FAMILLE DE MODELES POUR TRANSISTORS MOS INTEGRES ADAPTEE A L'ORDINATEUR. I. TRANSISTOR A ENRICHISSEMENTDIENER KH; FISCHER P; KRAUSS M et al.1978; NACHR.-TECH., ELEKTRON.; DDR; DA. 1978; VOL. 28; NO 10; PP. 414-417; BIBL. 18 REF.Article

THRESHOLD VOLTAGE CHARACTERISTICS OF DOUBLE-BORON-IMPLANTED ENHANCEMENT-MODE MOSFETS.WANG PP; SPENCER OS.1975; I.B.M. J. RES. DEVELOP.; U.S.A.; DA. 1975; VOL. 19; NO 6; PP. 530-538; BIBL. 19 REF.Article

THE PERMEABLE BASE TRANSISTOR AND ITS APPLICATION TO LOGIC CIRCUITSBOZLER CO; ALLEY GD.1982; PROC. IEEE; ISSN 0018-9219; USA; DA. 1982; VOL. 70; NO 1; PP. 46-52; BIBL. 18 REF.Article

NEW STRUCTURE OF ENHANCEMENT-MODE GAAS MICROWAVE M.O.S.F.E.T.MIMURA T; ODANI K; YOKOYAMA N et al.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 16; PP. 500-502; BIBL. 7 REF.Article

MIM GATE FET: NEW GAAS ENHANCEMENT-MODE TRANSISTORKOHN E; DORTU JM.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 12; PP. 434-435; BIBL. 2 REF.Article

GIGABIT LOGIC OPERATION WITH ENHANCEMENT-MODE GAAS MESFET IC'SMIZUTANI T; KATO N; OSAFUNE K et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 199-204; BIBL. 12 REF.Article

A SIMPLE AND ACCURATE METHOD TO MEASURE THE THRESHOLD VOLTAGE OF AN ENHANCEMENT-MODE MOSFETHEE GOOK LEE; SOO YOUNG OH; FULLER G et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 346-348; BIBL. 7 REF.Article

BORON PROFILES USING HEAVY PREDEPOSITIONS FOR P-MOS ENHANCEMENT. MODE DEVICES.STRUDWICK MN; LADBROOKE PH.1977; MONITOR; AUSTRAL.; DA. 1977; VOL. 38; NO 10; PP. 166-168; BIBL. 7 REF.Article

TRANSISTORS BIPOLAIRES ET TRANSISTORS MOS A ENRICHISSEMENT; QUELQUES POINTS DE COMPARAISONS.LYON CAEN R.1975; ONDE ELECTR.; FR.; DA. 1975; VOL. 55; NO 2; PP. 491-496; ABS. ANGL.; BIBL. 9 REF.Article

SINGLE-DEVICE-WELL MOSFET'SHAMDY EZ; ELMASRY MI; EL MANSY YA et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 3; PP. 322-327; BIBL. 11 REF.Article

PHOTOENHANCED ELECTROLUMINESCENCE IN AMORPHOUS SILICON P-I-N JUNCTIONSNASHASHIBI TS; SEARLE TM; AUSTIN IG et al.1982; PHILOS. MAG., B; ISSN 0141-8637; GBR; DA. 1982; VOL. 45; NO 6; PP. 573-582; BIBL. 11 REF.Article

N-CHANNEL ENHANCEMENT-MODE MOSFET CHARACTERISTICS FROM 10 TO 300 KTEWKSBURY SK.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 12; PP. 1519-1529; BIBL. 26 REF.Article

EIN ENTWURFSORIENTIERTES, RECHNERGERECHTES SCHALTUNGSMODELL FUER DEN MOS-ANREICHERUNGSTRANSISTOR = MODELE DE CIRCUIT POUR LE CALCUL SUR ORDINATEUR DU TRANSISTOR MOS A ENRICHISSEMENTKRAUSS M.1978; NACH.-TECH., ELEKTRON.; DDR; DA. 1978; VOL. 28; NO 1; PP. 10-11; BIBL. 3 REF.Article

FEMTO JOULE LOGIC CIRCUIT WITH ENHANCEMENT-TYPE SCHOTTKY-BARRIER GATE FET.MUTA H; SUZUKI S; YAMADA K et al.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 9; PP. 1023-1027; BIBL. 6 REF.Article

N-CHANNEL ENHANCEMENT M.O.S. TRANSISTOR BUILT IN GERMANIUM-DOPED SILICONNEUGROSHEL A; MARGALIT S; BAR LEV A et al.1973; ELECTRON. LETTERS; G.B.; DA. 1973; VOL. 9; NO 7; PP. 153-154; BIBL. 4 REF.Serial Issue

THRESHOLD VOLTAGE AND "GAIN" TERM BETA OF ION-IMPLANTED ENHANCEMENT-MODE N-CHANNEL MOS TRANSISTORSKAMOSHIDA M.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 8; PP. 404-405; BIBL. 13 REF.Serial Issue

N-CHANNEL ION IMPLANTED ENHANCEMENT*DEPLETION MOSFET'SFORBES L.1973; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1973; VOL. 8; NO 2; PP. 184-185; BIBL. 3 REF.Serial Issue

N-CHANNEL ION-IMPLANTED ENHANCEMENT*DEPLETION FET CIRCUIT AND FABRICATION TECHNOLOGYFORBES L.1973; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1973; VOL. 8; NO 3; PP. 226-230; BIBL. 6 REF.Serial Issue

ENHANCEMENT TYPE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH PLASMA ANODIC ALUMINIUM OXIDE AS THE GATE INSULATORHIRAYAMA Y; PARK HM; KOSHIGA F et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 8; PP. 712-713; BIBL. 6 REF.Article

ANALYSIS OF GAAS FET'S FOR INTEGRATED LOGICLEHOVEC K; ZULEEG R.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 6; PP. 1074-1091; BIBL. 46 REF.Article

  • Page / 25