au.\*:("MOHLING W")
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DOUBLE CRYSTAL X-RAY TOPOGRAPHS OF MICRODEFECTS IN SILICON.KIES J; KOHLER R; MOHLING W et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 37; NO 2; PP. K113-K115; BIBL. 10 REF.Article
UNTERSUCHUNGEN ZUM UBERGANG VON DYNAMISCHEN ZUM KINEMATISCHEN REFLEXIONSVERMOEGEN = ETUDES SUR LA TRANSITION DU POUVOIR REFLECHISSANT DYNAMIQUE A CINEMATIQUEKIES J; KOHLER R; MOHLING W et al.1973; Z. NATURFORSCH., A; DTSCH.; DA. 1973; VOL. 28; NO 5; PP. 610-614; ABS. ANGL.; BIBL. 11 REF.Serial Issue
Sensitivity of plane wave topography to microdefectsKÖHLER, R; MÖHLING, W.Physica status solidi. A. Applied research. 1983, Vol 78, Num 2, pp 489-496, issn 0031-8965Article
Characterization of dislocations by double crystal X-ray topography in back reflectionKAGANER, V. M; MÖHLING, W.Physica status solidi. A. Applied research. 1991, Vol 123, Num 2, pp 379-392, issn 0031-8965Article
Nature of dislocations promoting growth in liquid phase epitaxy of gallium arsenideMÖHLING, W; WEISHART, H; BAUSER, E et al.Journal of crystal growth. 1993, Vol 130, Num 3-4, pp 466-474, issn 0022-0248Article
Double crystal topography compensating for the strain in processed samplesJENICHEN, B; KÖHLER, R; MÖHLING, W et al.Physica status solidi. A. Applied research. 1985, Vol 89, Num 1, pp 79-87, issn 0031-8965Article
Zn-doped InGaAsP (1.3 μm) contact layer for an inverted DH laser structureHANSEN, K; PEINER, E; SCHLACHETZKI, A et al.Journal of crystal growth. 1992, Vol 125, Num 3-4, pp 465-476, issn 0022-0248Article