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ELECTRICAL MODELLING OF OHMIC CONTACTS FORMATION ON METAL-N-GAAS SYSTEMSMOJZES I.1980; ACTA PHYS. ACAD. SCI. HUNG.; ISSN 0001-6705; HUN; DA. 1980; VOL. 48; NO 2-3; PP. 131-146; BIBL. 30 REF.Article

FORMATION OF AUGE CONTACTS TO N-GAASMOJZES I.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 47; NO 2; PP. K183-K185; BIBL. 7 REF.Article

DETERMINATION OF SEMICONDUCTOR-METAL CONTACT RESISTANCE BY AN ANGLE-DEPENDENT GEOMETRICAL MAGNETORESISTANCE METHOD.GUTAI L; MOJZES I.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 6; PP. 325-326; BIBL. 4 REF.Article

COMMENTS ON THE PROPERTIES OF AN NH4OH-H2O2 ETCH ON EPITAXIAL GAASRADACSI E; MOJZES I; PFEIFER J et al.1980; KRIST. TECH.; ISSN 0023-4753; DDR; DA. 1980; VOL. 15; NO 6; PP. 747-751; ABS. RUS; BIBL. 4 REF.Article

ON THE TEMPERATURE DEPENDENCE OF PEAK ELECTRON VELOCITY AND THRESHOLD FIELD MEASURED ON GAAS GUNN DIODES.MOJZES I; PODOR B; BALOGH I et al.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 39; NO 2; PP. K123-K125; BIBL. 7 REF.Article

VOLATILE COMPONENT LOSS AND CONTACT RESISTANCE OF METALS ON GAAS AND GAP DURING ANNEALINGMOJZES I; SEBESTYEN T; SZIGETHY D et al.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 6; PP. 449-460; BIBL. 39 REF.Article

Influence of finite metal overlayer resistance on the evaluation of contact resistivityKOVACS, B; MOJZES, I.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 9, pp 1401-1403, issn 0018-9383Article

GALLIUM PLUS METAL CONTACTS TO GALLIUM ARSENIDE ALLOYED IN AN ARSENIC MOLECULAR BEAMMOJZES I; SEBESTYEN T; BARNA PB et al.1979; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1979; VOL. 61; NO 1; PP. 27-32; BIBL. 28 REF.Article

Theoretical explanation of the Schottky barrier height using an ultrathin interface metal layerTUY, T. Q; MOJZES, I.Applied physics letters. 1990, Vol 56, Num 17, pp 1652-1654, issn 0003-6951Article

Novel method to determine contact resistivity and sheet resistance under the contactDO DAC THOANG; KOVACS, B; MOJZES, I et al.International journal of electronics. 1999, Vol 86, Num 3, pp 281-286, issn 0020-7217Article

Thermal dissociation of InP covered with metallic contact layersMOJZES, I; VERESEGYHAZY, R; MALINA, V et al.Thin solid films. 1986, Vol 144, Num 1, pp 29-40, issn 0040-6090Article

The influence of a gold layer on the thermal decomposition of InAs = Der Einfluss einer Goldschicht auf die thermische Dissoziation von InAsVERESEGYHAZY, R; PECZ, B; MOJZES, I et al.Physica status solidi. A. Applied research. 1986, Vol 94, Num 1, pp K11-K12, issn 0031-8965Article

Thermal dissociation of InP covered with metallic contact layersMOJZES, I; VERESEGYHAZY, R; MALINA, V et al.Thin solid films. 1986, Vol 144, Num 1, pp 29-40, issn 0040-6090Article

Contact noise measurement of metal-GaAs multispot test patternsMOJZES, I; KOVACS, B; KINCSES, Z et al.Journal on communications. 1995, Vol 46, Num FEV, pp 28-31, issn 0866-5583Article

Mass spectrometric study of contact sintering in the GaSb/Au systemVERESEGYHAZY, R; MOJZES, I; LENDVAY, E et al.Thin solid films. 1986, Vol 138, Num 1, pp L55-L57, issn 0040-6090Article

Au-Be/Ru/Au multilayer metallization as a stable ohmic contact scheme to p-type InPMALINA, V; MORO, L; MICHELI, V et al.Semiconductor science and technology. 1996, Vol 11, Num 7, pp 1121-1126, issn 0268-1242Article

The influence of a gold layer on the thermal decomposition of InAsVERESEGYHAZY, R; PECZ, B; MOJZES, I et al.Physica status solidi. A. Applied research. 1986, Vol 94, Num 1, pp K11-K12, issn 0031-8965Conference Paper

Comparative reliability study of n+-n and n+-n-n+ Gunn diodesMOJZES, I; KOVACS, B; VERESEGYHAZY, R et al.Microelectronics and reliability. 1989, Vol 29, Num 2, pp 131-132, issn 0026-2714, 2 p.Article

In situ investigations of the metal-compound semiconductor interaction by mass spectrometry and electrical resistance measurementsSZIGETHY, D; MOJZES, I; SEBESTYEN, T et al.International journal of mass spectrometry and ion physics. 1983, Vol 52, Num 1, pp 117-129, issn 0020-7381Article

Electrical and microstructure analysis of Ni/Ge/N-GaAs interfaceDAVID, L; KOVACS, B; MOJZES, I et al.Thin solid films. 1998, Vol 323, Num 1-2, pp 212-216, issn 0040-6090Article

Mapping the redistributed components of the Au-Ge/GaAs system after scanning laser annealingMOJZES, I; VERESEGYHAZY, R; OBODNIKOV, V et al.Physica status solidi. A. Applied research. 1983, Vol 80, Num 1, pp K33-K36, issn 0031-8965Article

The electrical properties of Al/Ni/Ge/n-GaAs interfacesDAVID, L; KOVACS, B; MOJZES, I et al.Microelectronics and reliability. 1998, Vol 38, Num 5, pp 787-793, issn 0026-2714Article

Mass-spectrometric study of the dissociation of GaSb covered with contact layersKAFEDIISKA, E. I; MOJZES, I; VERESEGYHAZY, R et al.Physica status solidi. A. Applied research. 1986, Vol 93, Num 2, pp K125-K128, issn 0031-8965Article

Conductivity modification of silver salt-filled polyimide film by pulsed KrF laserKOCSIS, Z; HOPP, B; MUDRA, I et al.Journal of electronic materials. 2002, Vol 31, Num 4, pp 239-243, issn 0361-5235Article

Cross-sectional transmission electron microscopic study of Au/GaP and Au/InP contactsPECZ, B; VERESEGYHAZY, R; RADNOCZI, G et al.Journal of applied physics. 1991, Vol 70, Num 1, pp 332-336, issn 0021-8979, 5 p.Article

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