kw.\*:("MOLYBDENE SILICIURE")
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MOSI2 FORMATION BY RAPID ISOTHERMAL ANNEALINGFULKS RT; POWELL RA; STACY WT et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 7; PP. 179-181; BIBL. 11 REF.Article
ETUDE DE L'OXYDATION DE WSI2 ET MOSI2EFIMENKO LN; PETUKHOV VS.1976; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1976; VOL. 12; NO 2; PP. 356-357; BIBL. 5 REF.Article
LE CHOIX DES ELEMENTS CHAUFFANTS POUR LES OPERATIONS DE CHAUFFAGE DANS L'INDUSTRIE = CHOOSING HEATING ELEMENTS FOR INDUSTRIAL PROCESSINGTHOMANDER T; THORSELIUS R.1982; J.F.E. JOURNAL DU FOUR ELECTRIQUE; ISSN 0249-8715; FRA; DA. 1982; VOL. 87; NO 10; PP. 23-28; IDEM ENGArticle
ETUDE DES PROCESSUS DE DEFORMATION ET DE RECRISTALLISATION DE COMPOSES REFRACTAIRESSAMSONOV GV; KUSHTALOVA IP.1973; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1973; VOL. 9; NO 1; PP. 46-47; BIBL. 3 REF.Serial Issue
OXIDATION KINETICS OF LASER FORMED MOSI2 ON POLYCRYSTALLINE SILICONWAKITA AS; SIGMON TW; GIBBONS JF et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2711-2715; BIBL. 12 REF.Article
CINETIQUE DE LA CROISSANCE DE LA COUCHE D'OXYDE SUR LE DISILICIURE DE MOLYBDENEPOSTOGVARD GI.1976; ZASHCH. METALLOV.; S.S.S.R.; DA. 1976; VOL. 12; NO 6; PP. 714-716; BIBL. 9 REF.Article
FRITTAGE DU DISILICIURE DE MOLYBDENE, OBTENU PAR SYNTHESE HAUTE TEMPERATURE PAR AUTO-PROPAGATION.KAYUK VG; KUZENKOVA MA; DOLUKHANYAN SK et al.1978; POROSHKOV. METALLURG.; UKR; DA. 1978; NO 8; PP. 20-23; ABS. ENG; BIBL. 5 REF.Article
DIREKTBEOBACHTUNG DER AUSBILDUNG VON OXIDISCHEN DECKSCHICHTEN AUF MOSI2/TIGE2-MISCHKOERPERN. = OBSERVATION DIRECTE DE LA FORMATION D'UNE COUCHE D'OXYDES SUR LES MELANGES DE MOSI2/TIGE2SCHLICHTING J.1976; HIGH TEMPER.-HIGH PRESS.; G.B.; DA. 1976; VOL. 8; NO 1; PP. 99-102; BIBL. 4 REF.Article
APPLICATION OF MOSI2 TO THE DOUBLE-LEVEL INTERCONNECTIONS OF I2L CIRCUITS.SASAKI Y; OZAWA O.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 450-454; BIBL. 13 REF.Article
A NOVEL CONDUCTING GLAZE.DANCY EA.1976; AMER. CERAM. SOC. BULL.; U.S.A.; DA. 1976; VOL. 55; NO 6; PP. 569-571; BIBL. 6 REF.Article
INTERACTIONS BETWEEN MOLYBDENUM DISILICIDE AND SOME METALSBOTTREL COUTINHO C; BRADLEY WL.1972; AMER. CERAM. SOC. BULL.; U.S.A.; DA. 1972; VOL. 51; NO 9; PP. 689-691; BIBL. 9 REF.Serial Issue
EDGE-DEFINED PATTERNING OF HYPERFINE REFRACTORY METAL SILICIDE MOS STRUCTURESOKAZAKI S; CHOW TP; STECKL AJ et al.1981; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 11; PP. 1364-1368; BIBL. 17 REF.Article
NEW RADIANT HEATER FOR ZONE MELTING INTERMEDIATE MELTING-POINT MATERIALSBYLANDER EG; BEST AB.1983; REVIEW OF SCIENTIFIC INSTRUMENTS; ISSN 0034-6748; USA; DA. 1983; VOL. 54; NO 3; PP. 385-387; BIBL. 7 REF.Article
REFRACTORY MOSI2 AND MOSI2/POLYSILICON BULK CMOS CIRCUITSCHOW TP; STECKL AJ; JERDONEK RT et al.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 2; PP. 37-40; BIBL. 10 REF.Article
POROSITE DU DISILICIURE DE MOLYBDENE FRITTEKISLYJ PS; KAYUK VG; KUZENKOVA MA et al.1975; POROSHKOV. METALLURG., U.S.S.R.; S.S.S.R.; DA. 1975; NO 11; PP. 77-81; ABS. ANGL.; BIBL. 12 REF.Article
DIAGRAMME DISILICIURE DE MO-DISILICIURE DE TISVECHNIKOV VN; KOCHERZINSKIJ YU A; YUPKO LM et al.1972; DOKL. AKAD. NAUK S.S.S.R.; S.S.S.R.; DA. 1972; VOL. 206; NO 3; PP. 631-633; BIBL. 10 REF.Serial Issue
FILM PROPERTIES OF MOSI2 AND THEIR APPLICATION TO SELF-ALIGNED MOSI2 GATE MOSFETMOCHIZUKI T; TSUJIMARU T; KASHIWAGI M et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 496-500; BIBL. 13 REF.Article
REDUCTION OF VANADIUM PENTOXIDE BY MOLYBDENUM DISILICIDE.HUMENIK JN; COOK RL; WIRTZ GP et al.1976; J. AMER. CERAM. SOC.; U.S.A.; DA. 1976; VOL. 59; NO 5-6; PP. 267-269; BIBL. 5 REF.Article
THERMODYNAMIC PROPERTIES OF THE SYSTEM MOLYBDENUM-SILICONGHART TG.1974; METAL SCI.; G.B.; DA. 1974; VOL. 8; NO 10; PP. 344-348; BIBL. 32 REF.Article
FLUAGE LORS DU PRESSAGE A CHAUD DES POUDRES DE NITRURE DE TI, DE MOSI2, ET DES DIBORURES DE ZR ET CRKOVAL'CHENKO MS.1973; POROSHKOV. METALLURG., U.S.S.R.; S.S.S.R.; DA. 1973; NO 4; PP. 7-13; ABS. ANGL.; BIBL. 15 REF.Serial Issue
Some considerations regarding MoSi2 synthesisANGELESCU, N.Ceramics international. 1998, Vol 24, Num 1, pp 73-76, issn 0272-8842Article
Reactive ion beam etching of MoSi2 in CCl4POWELL, R. A.Journal of the Electrochemical Society. 1983, Vol 130, Num 5, pp 1164-1167, issn 0013-4651Article
APPLICATION D'UNE TECHNIQUE PLASMA-ARC EN CERAMIQUE. LA TRANSFORMATION DIRECTE DE LA MOLYBDENITE EN CARBURE, BORURE ET SILICIURE DE MOLYBDENE. LA PREPARATION DU HEXABORURE DE CALCIUM ELECTROFONDUDE VYNCK IA.1977; SILIC. INDUSTR.; BEL; DA. 1977; VOL. 42; NO 8; PP. 363-365; BIBL. 3 REF.Article
TROIS NOUVEAUX SILICIURES TERNAIRES ISOTYPES DE CR11GE8:CR8-XNB3+XSI8, CR8-XTA3+XSI8 ET MN8-XMO3+XSI8, 0 <OU= X<3.STEINMETZ J; DUSAUSOY Y; PROTAS J et al.1976; C. R. ACAD. SCI., C; FR.; DA. 1976; VOL. 283; NO 11; PP. 475-477; ABS. ANGL.; BIBL. 4 REF.Article