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INVESTIGATION OF TRANSIENT ELECTRONIC TRANSPORT IN GAAS FOLLOWING HIGH ENERGY INJECTIONYUH FONG TANG J; HESS K.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 12; PP. 1906-1911; BIBL. 12 REF.Article

A MONOLITHIC LEAD SULFIDE-SILICON MOS INTEGRATED-CIRCUIT STRUCTUREJHABVALA MD; BARRETT JR.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 12; PP. 1900-1905; BIBL. 9 REF.Article

MONOLITHISCH INTEGRIERBARE FILTER: EIN UEBERBLICK = LES FILTRES MONOLITHIQUES INTEGRABLES. VUE D'ENSEMBLEENTENMANN W.1981; FREQUENZ; ISSN 0016-1136; DEU; DA. 1981; VOL. 35; NO 3-4; PP. 54-66; ABS. ENG; BIBL. 28 REF.Article

MONOLITHIC DEVICES FOR LONG PERIOD TIMING.DANCE JB.1977; AUSTRAL. ELECTRON. ENGNG; AUSTRAL.; DA. 1977; VOL. 10; NO 5; PP. 19-24Article

MONOLITHISCH INTEGRIERTE SCHALTUNGEN AUF GALLIUMARASENID-BASIS. I = CIRCUITS INTEGRES MONOLITHIQUES A BASE D'ARSENIURE DE GALLIUM. PREMIERE PARTIEHERZOG J.1981; NACHRITENTECH., ELEKTRON.; ISSN 0323-4657; DDR; DA. 1981; VOL. 31; NO 2; PP. 48-52; ABS. RUS/ENG/FRE; BIBL. 34 REF.Article

INIZIA L'ETA DEI TEMPORIZZATORI MONOLITICI. = LE DEBUT DE L'AIRE DE LA TEMPORISATION MONOLITHIQUEDANCE JB; TURRINI A.1977; ANTENNA; ITAL.; DA. 1977; VOL. 49; NO 11; PP. 408-410Article

OPTIMAL RADIX FOR MONOLITHIC MEMORIESSEEVINCK E.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 23; PP. 736-737; BIBL. 6 REF.Article

A PRECISE LARGE CURRENT RATIO INTEGRATED GAIN CELLASHOK NEDUNGADI.1980; PROC. I.E.E.E.; USA; DA. 1980; VOL. 68; NO 3; PP. 412-413; BIBL. 4 REF.Article

DIGITALWERTKOMPARATOREN MIT NEUEN IS = COMPARATEUR DE VALEURS NUMERIQUES COMPORTANT DE NOUVEAUX CIRCUITS INTEGRESSTEINHAGEN H.1983; RADIO FERNSEHEN ELEKTRONIK; ISSN 0033-7900; DDR; DA. 1983; VOL. 32; NO 2; PP. 123-125; BIBL. 3 REF.Article

MONOLITHIC CRYSTAL FILTER, A COMPLETE PRODUCTWAKI K; MIYAZAKI S.1980; J. ELECTRON. ENGNG; JPN; DA. 1980; VOL. 17; NO 162; PP. 62-68Article

TANTALUM OXIDE CAPACITORS FOR GAAS MONOLITHIC INTEGRATED CIRCUITSELTA ME; CHU A; MAHONEY LJ et al.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 5; PP. 127-129; BIBL. 5 REF.Article

MONOLITHIC CLASS AB OPERATIONAL MIRRORED AMPLIFIERHUIJSING JH; VEELENTURF CJ.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 3; PP. 119-120; BIBL. 10 REF.Article

LEISTUNGSEIGENSCHAFTEN UND EINSATZBEREICHE VON BAUSTEINEN UND SYSTEMEN DER MIKROELEKTRONIK = CARACTERISTIQUES DE PUISSANCE ET DOMAINES D'EMPLOI DES COMPOSANTS ET SYSTEMES DE LA MICRO-ELECTRONIQUEJUNGMANN E.1980; VDI-BER.; ISSN 0083-5560; DEU; DA. 1980; NO 379; PP. 1-11; BIBL. 9 REF.Article

MIKROELEKTRONISCHE BAUGRUPPEN DER LSI- UND VLSI-TECHNIK = COMPOSANTS DE LA MICRO-ELECTRONIQUE EN TECHNOLOGIES DES CIRCUITS INTEGRES MONOLITHIQUES A GRANDE ECHELLE ET A TRES GRANDE ECHELLE1980; FEINGERAETETECHNIK; DDR; DA. 1980; VOL. 29; NO 4; PP. 177-179; BIBL. 42 REF.Article

MICROCOMPUTER CAN STAND ALONE OR JOIN FORCES WITH OTHER CHIPSSMITH DW.1979; ELECTRONICS; USA; DA. 1979; VOL. 52; NO 25; PP. 143-149Article

MODIFIED CURRENT MIRROR WITH A "VOLTAGE FOLLOWING" CAPABILITYHART BL; BARKER RWJ.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 22; PP. 970-972; BIBL. 2 REF.Article

EXPANDING HORIZONS IN C.M.O.S.WATSON D.1980; NEW ELECTRON.; GBR; DA. 1980; VOL. 13; NO 13; PP. 51-55; (3 P.)Article

USING MONOLITHIC MULTILEVEL ANALOG DETECTORSSPENSER J.1980; CONTROL ENG.; ISSN 0010-8049; USA; DA. 1980; VOL. 27; NO 5; PP. 97-99Article

MONOLITHISCH INTEGRIERBARE FILTER IN CTD-TECHNOLOGIE. II = FILTRES MONOLITHIQUES INTEGRES A DISPOSITIFS A TRANSFERT DE CHARGE. IIRIENECKER W.1980; ELEKTRONIK; DEU; DA. 1980; VOL. 29; NO 2; PP. 61-68; BIBL. 38 REF.Article

MONOLITHIC CONVECTERS GAIN STRENGTH.MATTERA L.1977; ELECTRONICS; U.S.A.; DA. 1977; VOL. 50; NO 12; PP. 78-79Article

TOPOLOGIE ET IMPLANTATION DANS LA CONCEPTION DES CIRCUITS INTEGRES MONOLITHIQUES.DUCAMUS J.1977; ONDE ELECTR.; FR.; DA. 1977; VOL. 57; NO 4; PP. 300-304; ABS. ANGL.Article

DISPOSITIFS A RETARD A COMPARATEURS INTEGRES MONOLITHIQUESD'YAKONOV VP; REMNEV AM.1977; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1977; NO 5; PP. 98-101; BIBL. 3 REF.Article

NEW TYPE OF THERMAL-FUNCTION I.C.: THE 4-QUADRANT MULTIPLIER.SZEKELY V.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 15; PP. 372-373; BIBL. 5 REF.Article

PROTON IMPLANTATION ISOLATION FOR MICROWAVE MONOLITHIC CIRCUITSESFANDIARI R; FENG M; KANBER H et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 2; PP. 29-31; BIBL. 8 REF.Article

TOLERANCE EFFECTS IN SUBMICROAMPERE CURRENT GENERATOR DESIGNHART BL; BARKER RWJ.1982; MICROELECTRONICS; ISSN 0026-2692; GBR; DA. 1982; VOL. 13; NO 2; PP. 22-24; BIBL. 7 REF.Article

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