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DIMINUTION, A L'AIDE D'UN SHUNT, DE LA DISPERSION DU GAINEVTYANOV SI; KOVALEV VN.1973; RADIOTEKHNIKA; S.S.S.R.; DA. 1973; VOL. 28; NO 4; PP. 64-67; BIBL. 3 REF.Serial Issue

ANALYSE PROBABILISTE DE LA PRECISION STATIQUE DE L'OSCILLATEUR A BLOCAGE A TRANSISTOR A L'EMETTEUR COMMUNKIKTENKO YU M; IGNATOV VA; MAN'SHIN GG et al.1972; VESCI AKAD. NAVUK B.S.S.R., FIZ.-TEKH. NAVUK; S.S.S.R.; DA. 1972; NO 4; PP. 99-104; BIBL. 3 REF.Serial Issue

OSCILLATIONS PARASITES ASYNCHRONES DANS LES AMPLIFICATEURS DE PUISSANCE A EMETTEUR COMMUN ET A BASE COMMUNENIKIFOROV VV.1975; TRUDY MOSKOV. ENERGET. INST.; S.S.S.R.; DA. 1975; NO 265; PP. 121-124; BIBL. 2 REF.Article

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OUTPUT INDUCTANCE OF AN EMITTER FOLLOWERCHOMA J JR.1979; IEE J. ELECTRON. CIRCUITS SYST.; GBR; DA. 1979; VOL. 3; NO 4; PP. 162-164; BIBL. 3 REF.Article

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A TWO-DIMENSIONAL ANALYSIS OF COMMON EMITTER CURRENT GAIN IN A LATERAL TRANSISTOR.PARAMESWARAN N; TYAGI MS.1976; INTERNATION. J. ELECTRON.; G.B.; DA. 1976; VOL. 40; NO 6; PP. 593-600; BIBL. 10 REF.Article

COAXIAL 2-PORT S-PARAMETER SYSTEM FOR TRANSISTOR CHARACTERISATION IN THREE CONFIGURATIONS FROM 1-500 MHZ.GRANVILLE GEORGE DA; WOODS D.1975; PROC. INSTIT. ELECTR. ENGRS; G.B.; DA. 1975; VOL. 122; NO 9; PP. 877-886; BIBL. 21 REF.Article

EFFECTS OF VARIATION OF LOAD RESISTANCE ON AMPLIFIER CHARACTERISTICS OF COMPLEMENTARY COMPOSITE TRANSISTORS. IIGUPTA RS.1973; INTERNATION. J. ELECTRON.; G.B.; DA. 1973; VOL. 34; NO 6; PP. 859-862; BIBL. 2 REF.Serial Issue

OUTPUT RESISTANCE OF A COMPLEMENTARY COMPOSITE TRANSISTORSWAMY KL; VENKATA REDDY K.1972; J. INSTIT. ENGRS (INDIA), ELECTRON. TELECOMMUNIC. ENGNG DIV.; INDIA; DA. 1972; VOL. 52; NO 5; PP. 232-233; BIBL. 3 REF.Serial Issue

CAN OSCILLATORS BE "COMMON". DOES IT MAKE SENSE TO CLASSIFY THEM IN THE SAME WAY AS AMPLIFIER CIRCUITS.1977; WIRELESS WORLD; G.B.; DA. 1977; VOL. 83; NO 1495; PP. 62-63Article

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APLLICATION OF TENSOR IN TRANSIENT ANALYSIS OF TRANSISTOR NETWORKS.LAHIRI BK.1976; J. INSTIT. ENGRS (INDIA), ELECTRON. TOLECOMMUNIC. ENGNG DIV.; INDIA; DA. 1976; VOL. 57; NO 2; PP. 57-61; BIBL. 4 REF.Article

LEAKAGE AND H_FE DEGRADATION IN MICROWAVE BIPOLAR TRANSISTORS.WANG ACM; KAKIHANA S.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 11; PP. 667-674; BIBL. 10 REF.Article

CARACTERISTIQUE D'UN TRANSISTOR DANS LES CONDITIONS D'UNE PRESSION UNIFORME SUR UNE PARTIE DE LA SURFACE DE L'EMETTEURRISTICH SD; TSVEKICH V.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 8; PP. 1633-1639; BIBL. 7 REF.Article

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TEMPERATURE STABILITY OF THE CE, CB AND THE CC CIRCUITS.SHARMA RS; NOOR UD DIN.1975; J. INSTIT. ENGRS (INDIA), ELECTRON. TELECOMMUNIC. ENGNG DIV.; INDIA; DA. 1975; VOL. 56; NO 2; PP. 57-58; BIBL. 2 REF.Article

I-V CHARACTERISTICS AT HIGH LEVEL INJECTION TAKING EFFECTIVE JUNCTION POTENTIAL TO DISCUSS BETA -FALL OFF IN PLANAR TRANSISTORSJAIN YK; SHARMA SC.1973; INTERNATION. J. ELECTRON.; G.B.; DA. 1973; VOL. 34; NO 6; PP. 731-735; BIBL. 7 REF.Serial Issue

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BASEWIDTH MODULATION AND NONLINEAR BETA IN CADA MODELSWHITE AB.1972; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1972; VOL. 7; NO 5; PP. 428-431; BIBL. 6 REF.Serial Issue