Patterning of W/WN_x/poly-Si gate electrode using Cl₂/O₂ plasmasKIM, Hyoun-Woo; JU, Byong-Sun; KANG, Chang-Jin et al.Microelectronic engineering. 2003, Vol 65, Num 3, pp 285-292, issn 0167-9317, 8 p.Article

Study of Ru etching using O₂/Cl₂ helicon plasmasHYOUN WOO KIM; HAN, Jae-Hyun; JU, Byong-Sun et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 95, Num 3, pp 249-253, issn 0921-5107Article

The effect of localized mask density variations on image quality in EUV lithographyPARK, Jinhong; SEO, Hwanseok; KIM, Seong-Sue et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 651723.1-651723.8, issn 0277-786X, isbn 978-0-8194-6636-5Conference Paper

Experimental investigation of the impact of LWR on sub-100-nm device performanceKIM, Hyun-Woo; LEE, Ji-Young; SHIN, Jangho et al.I.E.E.E. transactions on electron devices. 2004, Vol 51, Num 12, pp 1984-1988, issn 0018-9383, 5 p.Article

Development of resists for thermal flow process applicable to mass productionKANG, Yool; WOO, Sang-Gyun; CHOI, Sang-Jun et al.SPIE proceedings series. 2001, pp 222-231, isbn 0-8194-4031-0, 2VolConference Paper

A novel Resist material for sub-100nm contact hole patternCHUNG, Jeong-Hee; CHOI, Sang-Jun; YOOL KANG et al.SPIE proceedings series. 2000, pp 305-312, isbn 0-8194-3617-8Conference Paper

Fabrication and device characterization of omega-shaped-gate ZnO nanowire field-effect transistorsKEEM, Kihyun; JEONG, Dong-Young; KIM, Sangsig et al.Nano letters (Print). 2006, Vol 6, Num 7, pp 1454-1458, issn 1530-6984, 5 p.Article

A robust alternative for the DRAM capacitor of 50nm generationKWANG HEE LEE; CHUNG, Suk-Jin; HAN, Sungho et al.International Electron Devices Meeting. 2004, pp 841-844, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Front-end-of-line (FEOL) optimization for high-performance, high-reliable strained-si MOSFETs; from virtual substrate to gate oxidationLEE, Jong-Wook; LEE, Sun-Ghil; PARK, Seong-Geon et al.International Electron Devices Meeting. 2004, pp 1047-1050, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

High performance cell technology featuring sub-100nm DRAM with multi-gigabit densityLEE, Byung-Chan; YOO, Jong-Ryeol; LEE, Deok-Hyung et al.IEDm : international electron devices meeting. 2002, pp 835-838, isbn 0-7803-7462-2, 4 p.Conference Paper

Comparison of OPC models with and without 3D-mask effectSER, Jung-Hoon; PARK, Tae-Hoon; JEONG, Moon-Gyu et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7640, issn 0277-786X, isbn 978-0-8194-8054-5 0-8194-8054-1, 76401T.1-76401T.6, 2Conference Paper

AF Fixer : New incremental OPC method for optimizing Assist FeatureJUNG, Sung-Gon; KIM, Sang-Wook; LUGG, Robert M et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7028, pp 70280Y.1-70280Y.6, issn 0277-786X, isbn 978-0-8194-7243-4 0-8194-7243-3, 2Conference Paper

Analysis method to determine and characterize the mask mean-to-target and uniformity specificationLEE, Sung-Woo; LEUNISSEN, Leonardus H. A; VAN DE KERKHOVE, Jeroen et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 62810U.1-62810U.9, issn 0277-786X, isbn 0-8194-6356-6, 1VolConference Paper

Application of bi-layer resist to 70 nm node memory devicesKANG, Yool; JIN HONG; LEE, Shi-Yong et al.SPIE proceedings series. 2005, isbn 0-8194-5733-7, 2Vol, Part 2, 663-670Conference Paper

Etching characteristics and modeling for oval-shaped contactPARK, Sung-Chan; LIM, Seok-Hyun; SHIN, Chul-Ho et al.Thin solid films. 2007, Vol 515, Num 12, pp 4923-4927, issn 0040-6090, 5 p.Conference Paper

Macro analysis of line-edge and line width roughnessSHIN, Jangho; YOON, Jinyoung; JUNG, Youngjae et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, issn 0277-786X, isbn 0-8194-6195-4, 2Vol, vol 1, 61520X.1-61520X.7Conference Paper

Investigation on polarization monitoring mask : Pattern design and experimental verificationHWANG, Chan; PARK, Dong-Woon; SHIN, Jang-Ho et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, issn 0277-786X, isbn 0-8194-6195-4, 2Vol, vol 1, 61521M.1-61521M.7Conference Paper

Simulation and experiments for inspection properties of EUV mask defectsPARK, Jinhong; KIM, Seong-Sue; LEE, Sukjoo et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, issn 0277-786X, isbn 0-8194-6358-2, vol 2, 62833E.1-62833E.9Conference Paper

Simulation of critical dimension and profile metrology based on scatterometry methodCHALYKH, Roman; PUNDALEVA, Irina; KIM, Seongsue et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 63491K.1-63491K.9, issn 0277-786X, isbn 0-8194-6444-9, 2VolConference Paper

Low temperature crystallized Ta₂O₅/Nb₂O₅ bi-layers integrated into RIR capacitor for 60 nm generation and beyondCHO, Kyuho; LEE, Jinil; LIM, Jae-Soon et al.Microelectronic engineering. 2005, Vol 80, pp 317-320, issn 0167-9317, 4 p.Conference Paper

Elimination of surface state induced edge transistors in high voltage NMOSFETs for flash memory devicesLEE, Jin-Wook; GYOUNG HO BUH; YON, Guk-Hyon et al.Microelectronics and reliability. 2005, Vol 45, Num 9-11, pp 1394-1397, issn 0026-2714, 4 p.Conference Paper

Leakage current mechanisms in sub-50 nm recess-channel-type DRAM cell transistors with three-terminal gate-controlled diodesCHUNG, Eun-Ae; KIM, Young-Pil; NAM, Kab-Jin et al.Solid-state electronics. 2011, Vol 56, Num 1, pp 219-222, issn 0038-1101, 4 p.Article

Mask topography effect on OPC at hyper NA lithographyLEE, Sook; KIM, In-Sung; CHUN, Yong-Jin et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, issn 0277-786X, isbn 0-8194-6197-0, vol 2, 61541R.1-61541R.8Conference Paper

Improving Model-Based OPC Performance for sub- 60nm devices using real source optical modelJUNG, Sunggon; KIM, In-Sung; KANG, Young-Seog et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 61561H.1-61561H.6, issn 0277-786X, isbn 0-8194-6199-7, 1VolConference Paper

Defect inspection of EUV mask blank using confocal microscopy : Simulation and experimentKIM, Seong-Sue; PARK, Jinhong; CHALYKH, Roman et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, issn 0277-786X, isbn 0-8194-6194-6, 2Vol, vol 1,61511C.1-61511C.10Conference Paper