Structural and compositional homogeneity of InAIN epitaxial layers nearly lattice-matched to GaNMANUEL, J. M; MORALES, F. M; LOZANO, J. G et al.Acta materialia. 2010, Vol 58, Num 12, pp 4120-4125, issn 1359-6454, 6 p.Article

A comparison of ZnMgSSe and MgS wide bandgap semiconductors used as barriers : Growth, structure and luminescence propertiesMOUG, R. T; BRADFORD, C; IZDEBSKI, F et al.Journal of crystal growth. 2009, Vol 311, Num 7, pp 2099-2101, issn 0022-0248, 3 p.Conference Paper

Evaluation of interpolations of InN, AlN and GaN lattice and elastic constants for their ternary and quaternary alloysMORALES, F. M; MANUEL, J. M; GARCIA, R et al.Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 24, issn 0022-3727, 245502.1-245502.7Article

Selective ion-induced intermixing and damage in low-dimensional GaN/AIN quantum structuresREDONDO-CUBERO, A; LORENZ, K; WENDLER, E et al.Nanotechnology (Bristol. Print). 2013, Vol 24, Num 50, issn 0957-4484, 505717.1-505717.11Article

Defect morphology and strain of CVD grown 3C-SiC layers : effect of the carbonization processMENDEZ, D; AOUNI, A; MORALES, F. M et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 4, pp 561-565, issn 0031-8965, 5 p.Conference Paper

SIMS investigation of the influence of Ge pre-deposition on the interface quality between SiC and SiPEZOLDT, J; ZGHEIB, Ch; MASRI, P et al.Surface and interface analysis. 2004, Vol 36, Num 8, pp 969-972, issn 0142-2421, 4 p.Conference Paper

Nanocrystalline AlN:Si field emission arrays for vacuum electronicsLEBEDEV, V; MORALES, F. M; FISCHER, M et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 7, pp 1839-1844, issn 1862-6300, 6 p.Conference Paper

Estudio por microscopía electrónica y espectroscopía de infra-rojos de capas de SiC obtenidas mediante carburización de obleas de Si = Transmission electron microscopy study of SiC layers obtained by carbonization of Si wafersMORALES, F. M; RAMIREZ, J; FERNANDEZ, C et al.Boletín de la Sociedad Española de Cerámica y Vidrio. 2004, Vol 43, Num 2, pp 363-366, issn 0366-3175, 4 p.Conference Paper

SiC thin films obtained by Si carbonizationMOLINA, S. I; MORALES, F. M; ARAUJO, D et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2001, Vol 80, Num 1-3, pp 342-344, issn 0921-5107Conference Paper

Microprocessor exercise physiology systems vs a nonautomated system: a comparison of data outputMATTHEWS, J. I; BUSH, B. A; MORALES, F. M et al.Chest. 1987, Vol 92, Num 4, pp 696-703, issn 0012-3692Article

Specific twin junctions in doped zirconiaMORALES, F. M; RUHLE, M.Acta crystallographica. Section B, Structural science. 2006, Vol 62, Num 5, pp 761-767, issn 0108-7681, 7 p.Article

Determination of the composition of In_xGa_1-xN from strain measurementsMORALES, F. M; GONZALEZ, D; LOZANO, J. G et al.Acta materialia. 2009, Vol 57, Num 19, pp 5681-5692, issn 1359-6454, 12 p.Article

Local control of SiC polytypesPEZOLDT, J; MORALES, F. M; KALNIN, A. A et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 4, pp 1056-1062, issn 1862-6300, 7 p.Conference Paper

Investigation of the interface manipulation in SiC(100) on Si(100) with isovalent impuritiesPEZOLDT, J; MORALES, F. M; ZGHEIB, Ch et al.Surface and interface analysis. 2006, Vol 38, Num 4, pp 444-447, issn 0142-2421, 4 p.Conference Paper

Phase equilibria in the ZrO₂-GdO_1.5 system at 1400-1700 °cZINKEVICH, M; WANG, Ch; MORALES, F. M et al.Journal of alloys and compounds. 2005, Vol 398, Num 1-2, pp 261-268, issn 0925-8388, 8 p.Article

Transmission electron microscopy study of simultaneous high-dose C⁺+N⁺ co-implantation into (1 1 1)SiMORALES, F. M; MOLINA, S. I; PONCE, A et al.Thin solid films. 2003, Vol 426, Num 1-2, pp 16-30, issn 0040-6090, 15 p.Article