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au.\*:("MORGAN DV")

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THE CHARACTERIZATION AND APPLICATION OF ION-INDUCED DAMAGE IN GALLIUM ARSENIDE DEVICESMORGAN DV.1980; RAD. PHYS. CHEM.; GBR; DA. 1980; VOL. 15; NO 5; PP. 627-636; BIBL. 29 REF.Article

A SIMPLE MODEL FOR PLANAR DECHANNELING CALCULATIONSMORGAN DV.1979; RAD. EFFECTS; GBR; DA. 1979; VOL. 43; NO 3; PP. 97-100; BIBL. 11 REF.Article

SWITCHING MODEL OF ARC ROOT INITIATION ON OXIDE-COATED COLD CATHODES.MORGAN DV.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 18; PP. 454-456; BIBL. 10 REF.Article

RECENT ADVANCES IN SURFACE STUDIES: ION BEAM ANALYSIS.MORGAN DV.1975; CONTEMPOR. PHYS.; G.B.; DA. 1975; VOL. 16; NO 3; PP. 221-241; BIBL. 15 REF.Article

SCHOTTKY BARRIER HEIGHT: A DESIGN PARAMETER FOR DEVICE APPLICATIONSMORGAN DV; FREY J.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 10; PP. 865-873; BIBL. 29 REF.Article

COMPUTER MODELLING OF PLANAR DECHANNELING. II. DIATOMIC LATTICES.MORGAN DV; JACKSON DP.1976; RAD. EFFECTS; G.B.; DA. 1976; VOL. 29; NO 2; PP. 99-106; BIBL. 12 REF.Article

THE ROLE OF RADIATION DAMAGE ON THE CURRENT-VOLTAGE CHARACTERISTICS OF P-N JUNCTIONS.ASHBURN P; MORGAN DV.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 7; PP. 689-698; BIBL. 17 REF.Article

CORRELATION BETWEEN SCHOTTKY BARRIER HEIGHTS ON COMPUND SEMICONDUCTORS AND METAL AND SEMICONDUCTOR ELECTRONEGATIVITIESMORGAN DV; FREY J.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 9; PP. 5702-5704; BIBL. 13 REF.Article

COMMENTS ON THE MODIFICATION OF SCHOTTKY BARRIER HEIGHT BY INTERFACIAL OXIDESMORGAN DV; FREY J.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 51; NO 1; PP. K29-K33; BIBL. 14 REF.Article

THE ELECTRICAL ACTIVITY OF NEUTRON DAMAGE CENTRES IN SILICON DIODES.MORGAN DV; ASHBURN P.1974; RAD. EFFECTS; G.B.; DA. 1974; VOL. 22; NO 1; PP. 35-38; BIBL. 8 REF.Article

THE EFFECTS OF RADIATION DAMAGE ON THE PROPERTIES OF NI-NGAAS SCHOTTKY DIODES. I. CHARACTERIZATION OF DEFECT LEVELS.TAYLOR PD; MORGAN DV.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 6; PP. 473-479; BIBL. 17 REF.Article

INCREASING THE EFFECTIVE BARRIER HEIGHT OF SCHOTTKY CONTACTS TO N-INXGA1-XASMORGAN DV; FREY J.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 23; PP. 737-739; BIBL. 9 REF.Article

THERMAL EMISSION FROM DAMAGE NEAR THE INTERFACE OF SCHOTTKY BARRIERS AND ITS INFLUENCE ON THERMALLY STIMULATED AND TRANSCIENT CURRENT EXPERIMENTS.TAYLOR PD; MORGAN DV.1977; J. PHYS. D; G.B.; DA. 1977; VOL. 10; NO 1; PP. 73-82; BIBL. 10 REF.Article

COMPUTER MODELLING OF PLANAR DECHANNELING. III. TRAJECTORY-DEPENDENT ELECTRON MULTIPLE SCATTERING.MORGAN DV; JACKSON DP.1976; RAD. EFFECTS; G.B.; DA. 1976; VOL. 29; NO 2; PP. 107-111; BIBL. 18 REF.Article

COMPUTER MODELLING OF PLANAR DECHANNELLING. I. MONATOMIC LATTICES.JACKSON DP; MORGAN DV.1976; RAD. EFFECTS; G.B.; DA. 1976; VOL. 28; NO 1-2; PP. 5-13; BIBL. 15 REF.Article

THE EFFECTS OF RADIATION DAMAGE ON THE PROPERTIES OF NI-NGAAS SCHOTTKY DIODES. II. TERMINAL CHARACTERISTICS.TAYLOR PD; MORGAN DV.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 6; PP. 481-488; BIBL. 16 REF.Article

ROLE OF RADIATION DAMAGE ON THE CONTACT RESISTANCE OF GA AS SCHOTTKY BARRIERS.TAYLOR PD; MORGAN DV.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 21; PP. 428-429; BIBL. 8 REF.Article

SOLID STATE ELECTRONIC DEVICESMORGAN DV; HOWES MJ.1972; LONDON; WYKEHAM PUBL.; DA. 1972; PP. (202 P.); ISBN 0851092403; (WYKEHAM SCI. SER.)Book

THE EFFECT OF HEAT TREATMENT ON UNPASSIVATED AND PASSIVATED GALLIUM ARSENIDE SURFACES = EFFET D'UN TRAITEMENT THERMIQUE SUR LES SURFACES D'ARSENIURE DE GALLIUM PASSIVEES ET NON PASSIVEESWOOD DR; MORGAN DV.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 5; PP. 479-485; BIBL. 15 REF.Article

COMPUTER MODELLING OF COLLISION PROCESSES IN SOLIDS.JACKSON DP; MORGAN DV.1974; CONTEMPOR. PHYS.; G.B.; DA. 1974; VOL. 15; NO 1; PP. 25-48; BIBL. 23 REF.Article

GENERATION/RECOMBINATION OF CARRIERS IN P-N JUNCTIONS.MORGAN DV; ASHBURN P.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 7; PP. 85-86; BIBL. 6 REF.Article

HEAT CYCLING OF UN-PASSIVATED GAAS SURFACES.MORGAN DV; WOOD DR.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 23; NO 1; PP. 325-330; ABS. ALLEM.; BIBL. 7 REF.Article

AN INVESTIGATION OF THE STOICHIOMETRY AND IMPURITY CONTENT OF THIN SILICON OXIDE FILMS USING RUTHERFORD SCATTERING OF MEV ALPHA -PARTICLESMORGAN DV; GITTINS RP.1972; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1972; VOL. 13; NO 2; PP. 517-526; ABS. ALLEM.; BIBL. 18 REF.Serial Issue

THE EFFECTS OF RADIATION DAMAGE ON THE PROPERTIES OF NI-NGAAS SCHOTTKY DIODES. III. ANNEALING STUDIES.TAYLOR PD; MORGAN DV.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 11; PP. 935-938; BIBL. 8 REF.Article

THE CHARACTERIZATION OF GAAS SURFACES.WOOD DR; MORGAN DV.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 6; PP. 773-777; BIBL. 15 REF.Article

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