SHORT-CHANNEL GAAS FET FABRICATED LIKE A MESFET BUT OPERATING LIKE A JFETMORKOC H.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 6; PP. 258-259; BIBL. 5 REF.Article

New approaches in heteroepitaxy and related devicesMORKOC, H.Vacuum. 1991, Vol 42, Num 4, pp 257-267, issn 0042-207X, 11 p.Conference Paper

GROWTH LIQUID PHASE EPITAXY AND EVALUATION OF SUBMICRON IN_XGA_1-XAS_YP_1-Y LAYERS FOR MICROWAVE FIELD EFFECT TRANSISTORSHOUNG YM; MORKOC H.1980; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 71; NO 1; PP. 141-145; BIBL. 7 REF.Article

THE GROWTH OF UNIFORM SUBMICRON GAAS LAYERS BY LIQUID PHASE EPITAXY.MORKOC H; EASTMAN LF.1976; J. ELECTROCHEM. SCI.; U.S.A.; DA. 1976; VOL. 123; NO 6; PP. 906-912; BIBL. 20 REF.Article

Comprehensive characterization of hydride VPE grown GaN layers and templatesMORKOC, H.Materials science & engineering. R, Reports. 2001, Vol 33, Num 5-6, pp 135-207, issn 0927-796XArticle

CHARGE TRANSPORT BY SURFACE ACOUSTIC WAVES IN GAASHOSKINS M; MORKOC H; HUNSINGER BJ et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 4; PP. 332-334; BIBL. 8 REF.Article

INTERFACIAL PROPERTIES OF (AL,GA)AS/GAAS STRUCTURES: EFFECT OF SUBSTRATE TEMPERATURE DURING GROWTH BY MOLECULAR BEAM EPITAXYMORKOC H; DRUMMOND TJ; FISCHER R et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 2; PP. 1030-1033; BIBL. 24 REF.Article

WHISKER GROWTH DURING EPITAXY OF GAAS BY MOLECULAR BEAM EPITAXYMORKOC H; STAMBERG R; KRIKORIAN E et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 4; PP. L230-L232; BIBL. 7 REF.Article

GAAS MESFET'S BY MOLECULAR BEAM EPITAXYMORKOC H; DRUMMOND TJ; OMORI M et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 222-224; BIBL. 19 REF.Article

COMPARISON OF SINGLE AND MULTIPLE PERIOD MODULATION DOPED AL_XGA_1-XAS/GAAS HETEROSTRUCTURES FOR FETSDRUMMOND TJ; KEEVER M; MORKOC H et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 2; PART. 1; PP. L65-L67; BIBL. 8 REF.Article

RESIDUAL IMPURITIES IN HIGH PURITY GAAS EPITAXIAL LAYERS GROWN BY LIQUID PHASE EPITAXYMORKOC H; EASTMAN LF; WOODARD D et al.1980; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 71; NO 2; PP. 245-248; BIBL. 9 REF.Article

SCHOTTKY BARRIERS AND OHMIC CONTACTS ON N-TYPE INP BASED COMPOUND SEMICONDUCTORS FOR MICROWAVE FET'SMORKOC H; DRUMMOND TJ; STANCHAK CM et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 1; PP. 1-5; BIBL. 24 REF.Article

THREE PERIOD (A1,GA)AS/GAAS HETEROSTRUCTURES WITH EXTREMELY HIGH MOBILITIESDRUMMOND TJ; KOPP W; MORKOC H et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 13; PP. 442-444; BIBL. 12 REF.Article

A STUDY OF HIGH-SPEED NORMALLY OFF AND NORMALLY ON AIO.5GAO.5AS HETEROJUNCTION GATE GAAS FET'S (HJFET)MORKOC H; BANDY SG; SANKARAN R et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 6; PP. 619-627; BIBL. 13 REF.Article

1/F NOISE IN MODULATION-DOPED FIELD EFFECT TRANSISTORSDUH KH; VAN DER ZIEL A; MORKOC H et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 1; PP. 12-13; BIBL. 4 REF.Article

Material-based comparison for power heterojunction bipolar transistorsGUANG-BO GAO; MORKOC, H.I.E.E.E. transactions on electron devices. 1991, Vol 38, Num 11, pp 2410-2416, issn 0018-9383Article

Self-aligned In_0.52Al_0.48As/In_0.53Ga_0.47As heterojunction bipolar transistors with graded interface on semi-insulating InP grown by molecular beam epitaxyWON, T; MORKOC, H.IEEE electron device letters. 1989, Vol 10, Num 3, pp 138-140, issn 0741-3106Article

Picosecond time-resolved Raman studies of the expansion of electron-hole plasma in GaAs-Al_xGa_1-xAs multiple-quantum-well structuresTSEN, K. T; MORKOC, H.Physical review. B, Condensed matter. 1986, Vol 34, Num 8, pp 6018-6021, issn 0163-1829, part 2Article

The HEMT: a superfast transistor ― An experimetnal gaAs-AlGaAs device switches in picoseconds and generates little heat ― This is just what supercomputers needMORKOC, H; SOLOMON, P. M.IEEE spectrum. 1984, Vol 21, Num 2, pp 28-35, issn 0018-9235Article

CHARACTERIZATION OF HIGH PURITY GAAS GROWN BY MOLECULAR BEAM EPITAXYDINGLE R; WEISBUCH C; STORMER HL et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 6; PP. 507-510; BIBL. 22 REF.Article

ELECTRON MOBILITIES IN MODULATION DOPED GA_0.47IN_0.53AS/AL_0.48IN_0.52AS HETEROJUNCTIONS GROWN BY MOLECULAR BEAM EPITAXYCHENG KY; CHO AY; DRUMMOND TJ et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 2; PP. 147-149; BIBL. 13 REF.Article

INFLUENCE OF BUFFER THICKNESS ON THE PERFORMANCE OF GAAS FIELD EFFECT TRANSISTORS PREPARED BY MOLECULAR BEAM EPITAXYSU SL; THORNE RE; FISCHER R et al.1982; JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY; ISSN 0022-5355; USA; DA. 1982; VOL. 21; NO 4; PP. 961-964; BIBL. 7 REF.Article

SURFACE SEGREGATION MODEL FOR SN-DOPED GAAS GROWN BY MOLECULAR BEAM EPITAXYROCKETT A; DRUMMOND TJ; GREENE JE et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 10; PP. 7085-7087; BIBL. 14 REF.Article

MOBILITY ENHANCEMENT IN INVERTED AL_XGA_1-XAS/GAAS MODULATION DOPED STRUCTURES AND ITS DEPENDENCE ON DONOR-ELECTRON SEPARATIONMORKOC H; DRUMMOND TJ; THORNE RE et al.1981; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 12; PP. L913-L916; BIBL. 14 REF.Article

NEGATIVE DIFFERENTIAL RESISTANCE THROUGH REAL-SPACE ELECTRON TRANSFERHESS K; MORKOC H; SHICHIJO H et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 6; PP. 469-471; BIBL. 9 REF.Article