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A SHORT-CHANNEL GAAS FET FABRICATED LIKE A MESFET, BUT OPERATING LIKE A JFETMORKOC H.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 4; PP. L233-L234; BIBL. 5 REF.Article

CURRENT TRANSPORT IN MODULATION DOPED (AL, GA)AS/GAAS HETEROSTRUCTURES: APPLICATIONS TO HIGH SPEED FET'SMORKOC H.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 10; PP. 260-262; BIBL. 15 REF.Article

SHORT-CHANNEL GAAS FET FABRICATED LIKE A MESFET BUT OPERATING LIKE A JFETMORKOC H.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 6; PP. 258-259; BIBL. 5 REF.Article

New approaches in heteroepitaxy and related devicesMORKOC, H.Vacuum. 1991, Vol 42, Num 4, pp 257-267, issn 0042-207X, 11 p.Conference Paper

GROWTH LIQUID PHASE EPITAXY AND EVALUATION OF SUBMICRON INXGA1-XASYP1-Y LAYERS FOR MICROWAVE FIELD EFFECT TRANSISTORSHOUNG YM; MORKOC H.1980; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 71; NO 1; PP. 141-145; BIBL. 7 REF.Article

HIGH-PURITY GAAS AND CR-DOPED GAAS EPITAXIAL LAYERS BY MBEMORKOC H; CHO AY.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 10; PP. 6413-6416; BIBL. 16 REF.Article

THE GROWTH OF UNIFORM SUBMICRON GAAS LAYERS BY LIQUID PHASE EPITAXY.MORKOC H; EASTMAN LF.1976; J. ELECTROCHEM. SCI.; U.S.A.; DA. 1976; VOL. 123; NO 6; PP. 906-912; BIBL. 20 REF.Article

Comprehensive characterization of hydride VPE grown GaN layers and templatesMORKOC, H.Materials science & engineering. R, Reports. 2001, Vol 33, Num 5-6, pp 135-207, issn 0927-796XArticle

PURITY OF GAAS GROWN BY LPE IN A GRAPHITE BOAT.MORKOC H; EASTMAN LF.1976; J. CRYST. GROWTH; NETHERL.; DA. 1976; VOL. 36; NO 1; PP. 109-114; BIBL. 11 REF.Article

CHARGE TRANSPORT BY SURFACE ACOUSTIC WAVES IN GAASHOSKINS M; MORKOC H; HUNSINGER BJ et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 4; PP. 332-334; BIBL. 8 REF.Article

INTERFACIAL PROPERTIES OF (AL,GA)AS/GAAS STRUCTURES: EFFECT OF SUBSTRATE TEMPERATURE DURING GROWTH BY MOLECULAR BEAM EPITAXYMORKOC H; DRUMMOND TJ; FISCHER R et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 2; PP. 1030-1033; BIBL. 24 REF.Article

WHISKER GROWTH DURING EPITAXY OF GAAS BY MOLECULAR BEAM EPITAXYMORKOC H; STAMBERG R; KRIKORIAN E et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 4; PP. L230-L232; BIBL. 7 REF.Article

LOW-NOISE GAAS FIELD-EFFECT TRANSISTORS PREPARED BY MOLECULAR BEAM EPITAXYOMORI M; DRUMMOND TJ; MORKOC H et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 7; PP. 566-569; BIBL. 19 REF.Article

EFFECTS OF AN IN LAYER UNDER THE GATE ON THE PERFORMANCE OF INP MESFET'SMORKOC H; ANDREWS JT; HYDER SB et al.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 3; PP. 238-241; BIBL. 9 REF.Article

CONTACT POTENTIAL OF P-A10.5 GA0.5 AS/N-GAAS STRUCTURES.MORKOC H; BANDY SC; ANTYPAS GA et al.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 4; PP. 663-664; BIBL. 4 REF.Article

SUBSTRATE DEPENDENCE OF INP M.E.S.F.E.T. PERFORMANCEMORKOC H; ANDREWS JT; HYDER SB et al.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 22; PP. 715-716; BIBL. 4 REF.Article

GAAS MESFET'S BY MOLECULAR BEAM EPITAXYMORKOC H; DRUMMOND TJ; OMORI M et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 222-224; BIBL. 19 REF.Article

COMPARISON OF SINGLE AND MULTIPLE PERIOD MODULATION DOPED ALXGA1-XAS/GAAS HETEROSTRUCTURES FOR FETSDRUMMOND TJ; KEEVER M; MORKOC H et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 2; PART. 1; PP. L65-L67; BIBL. 8 REF.Article

RESIDUAL IMPURITIES IN HIGH PURITY GAAS EPITAXIAL LAYERS GROWN BY LIQUID PHASE EPITAXYMORKOC H; EASTMAN LF; WOODARD D et al.1980; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 71; NO 2; PP. 245-248; BIBL. 9 REF.Article

CHARACTERISTICS OF SUBMICRON GATE GAAS FET'S WITH AL03GA07AS BUFFERS: EFFECTS OF INTERFACE QUALITYKOPP W; MORKOC H; DRUMMOND TJ et al.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 2; PP. 46-48; BIBL. 8 REF.Article

DEPENDENCE OF ELECTRON MOBILITY ON SPATIAL SEPARATION OF ELECTRONS AND DONORS IN ALXGA1-XAS/GAAS HETEROSTRUCTURESDRUMMOND TJ; MORKOC H; CHO AY et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 3; PART. 1; PP. 1380-1386; BIBL. 27 REF.Article

TRANSPORT PROPERTIES OF SN-DOPED ALXGA1-XAS GROWN BY MOLECULAR BEAM EPITAXYMORKOC H; CHO AY; RADICE C JR et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 9; PP. 4882-4884; BIBL. 17 REF.Article

SCHOTTKY BARRIERS AND OHMIC CONTACTS ON N-TYPE INP BASED COMPOUND SEMICONDUCTORS FOR MICROWAVE FET'SMORKOC H; DRUMMOND TJ; STANCHAK CM et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 1; PP. 1-5; BIBL. 24 REF.Article

THREE PERIOD (A1,GA)AS/GAAS HETEROSTRUCTURES WITH EXTREMELY HIGH MOBILITIESDRUMMOND TJ; KOPP W; MORKOC H et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 13; PP. 442-444; BIBL. 12 REF.Article

A STUDY OF HIGH-SPEED NORMALLY OFF AND NORMALLY ON AIO.5GAO.5AS HETEROJUNCTION GATE GAAS FET'S (HJFET)MORKOC H; BANDY SG; SANKARAN R et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 6; PP. 619-627; BIBL. 13 REF.Article

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