au.\*:("MORVAN, E")
Results 1 to 14 of 14
Selection :
Evaluation of MESFET structures from temperature-dependent Hall effect measurementsTERZIYSKA, P; BLANC, C; BRYLINSKI, C et al.Physica status solidi. A. Applied research. 2003, Vol 195, Num 1, pp 243-247, issn 0031-8965, 5 p.Conference Paper
Lateral spread of implanted ion distributions in 6H-SiC : simulationMORVAN, E; MESTRES, N; PASCUAL, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 61-62, pp 373-377, issn 0921-5107Conference Paper
Sheet resistance measurement on AlGaN/GaN wafers and dispersion studyLEHMANN, J; LEROUX, C; CHARLES, M et al.Microelectronic engineering. 2013, Vol 109, pp 334-337, issn 0167-9317, 4 p.Article
AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHzSARAZIN, N; MORVAN, E; DI FORTE POISSON, M. A et al.IEEE electron device letters. 2010, Vol 31, Num 1, pp 11-13, issn 0741-3106, 3 p.Article
Intérêts dosimétriques et cliniques de la radiothérapie asservie à la respiration des cancers du poumon et du sein: résultats du Stic 2003 = Dosimetric and clinical benefits of respiratory-gated radiotherapy for lung and breast cancers: Results of the STIC 2003GIRAUD, P; DJADI-PRAT, J; BACHAUD, J.-M et al.Cancer radiothérapie. 2012, Vol 16, Num 4, pp 272-281, issn 1278-3218, 10 p.Article
Thermal stability of Mo-based schottky contact for AlGaN/GaN HEMTSOZZA, A; DUA, C; MORVAN, E et al.Electronics Letters. 2005, Vol 41, Num 16, pp 927-928, issn 0013-5194, 2 p.Article
Evidence of surface states for 4H-SiC MESFETs on semi-insulating substrates by current transient spectroscopyGASSOUMI, M; DERMOUL, I; BRYLINSKI, C et al.International conference on microelectronics. 2004, isbn 0-7803-8166-1, 2Vol, vol 2, 417-420Conference Paper
Reliability investigation of gallium nitride HEMTSOZZ, A; DUA, C; MORVAN, E et al.Microelectronics and reliability. 2004, Vol 44, Num 9-11, pp 1369-1373, issn 0026-2714, 5 p.Conference Paper
GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT applicationDI FORTE POISSON, M.-A; MAGIS, M; MORVAN, E et al.Journal of crystal growth. 2008, Vol 310, Num 23, pp 5232-5236, issn 0022-0248, 5 p.Conference Paper
In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVDDI FORTE POISSON, M.-A; SARAZIN, N; MAGIS, M et al.Journal of crystal growth. 2007, Vol 298, pp 826-830, issn 0022-0248, 5 p.Conference Paper
Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrateDUCATTEAU, D; MINKO, A; DELAGE, S et al.IEEE electron device letters. 2006, Vol 27, Num 1, pp 7-9, issn 0741-3106, 3 p.Article
Punch-through in short-channel AlGaN/GaN HFETsUREN, M. J; NASH, K. J; BALMER, R. S et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 2, pp 395-398, issn 0018-9383, 4 p.Article
Dynamic latch-up in advanced LIGBT structures at high operating temperaturesVELLVEHI, M; JORDA, X; FLORES, D et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 304-308, issn 0921-5107Conference Paper
Study of recoil implantation technique for deep low doped junction formation with aluminumGODIGNON, P; MORVAN, E; MONTSERRAT, J et al.Microelectronic engineering. 1998, Vol 40, Num 2, pp 99-109, issn 0167-9317Article