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SIMPLE IMPROVEMENT OF THE LINDNER HIGH-FREQUENCY MOS CAPACITANCE APPROXIMATIONFENSKE F.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 75; NO 2; PP. K141-K144; BIBL. 12 REF.Article

INFLUENCE DES PROCESSUS TUNNEL DE GENERATION SUR LA RELAXATION DE LA CAPACITE DES STRUCTURES MDSV'YUKOV LA; SURIS RA.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 10; PP. 1768-1773; BIBL. 11 REF.Article

ORIGIN OF HIGH-FREQUENCY DISPERSION OF GP/OMEGA OF METAL-OXIDE SEMICONDUCTOR CAPACITORSKNOLL M; FAHRNER WR.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 4; PP. 3071-3072; BIBL. 7 REF.Article

EXPERIMENTAL TECHNIQUE FOR DETERMINING SURFACE POTENTIAL AS A FUNCTION OF GATE VOLTAGE OF A MOS CAPACITORTONNER PD; SIMMONS JG.1980; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1980; VOL. 51; NO 10; PP. 1378-1380; BIBL. 2 REF.Article

Instabilitäten und Durchbruch von Polycid-SiO2-Si-Strukturen = Instability, breakdown, polysilicium, silicide MOS capacityMARKGRAF, W; HOFMANN, H.-P; BEYER, A et al.Wissenschaftliche Zeitschrift der Technischen Universität Karl-Marx-Stadt. 1989, Vol 31, Num 4, pp 585-594, issn 0863-0615, 10 p.Article

Temperature dependent analysis of the pulsed MOS capacitor for semiconductor material characterizationRADZIMSKI, Z; GAYLORD, E; HONEYCUTT, J et al.Journal of the Electrochemical Society. 1988, Vol 135, Num 10, pp 2597-2601, issn 0013-4651Article

A bias voltage dependence of trapped hole annealing and its measurement techniqueKUBOYAMA, S; GOKA, T; TAMURA, T et al.IEEE transactions on nuclear science. 1991, Vol 38, Num 6, pp 1140-1144, issn 0018-9499, 1Conference Paper

C-V hysteresis instability in aluminum/tantalum oxide/silicon oxide/silicon capacitors due to postmetallization annealing and Co-60 irradiationJENN-GWO HWU; MING-JER JENG.Journal of the Electrochemical Society. 1988, Vol 135, Num 11, pp 2808-2813, issn 0013-4651Article

Evaluation of laser CVD tungsten for gate electrodeMATSUHASHI, H; NISHIKAWA, S; OHNO, S et al.Japanese journal of applied physics. 1988, Vol 27, Num 11, pp l2161-L2163, issn 0021-4922, part 2Article

Effect of low pressure corona discharge on MOS characteristicsILA PRASAD; SRIVASTAVA, R. S.Indian journal of pure & applied physics. 1990, Vol 28, Num 5, pp 284-286, issn 0019-5596Article

MINIMUM VALUE OF THE LOW-FREQUENCY SPACE-CHARGE CAPACITANCE OF MOS STRUCTURESKOKKAS AG.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 3; PP. 249-251; BIBL. 11 REF.Article

SAMPLED-DATA FILTERS WITH SWITCHED CAPACITORSBOZIC SM.1979; INTERNATION. J. ELECTRON.; GBR; DA. 1979; VOL. 47; NO 6; PP. 537-543; BIBL. 7 REF.Article

TEMPERATURE SENSITIVITY OF ION-IMPLANTED MOS CAPACITORSTOPICH JA.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 11; PP. 787-789; BIBL. 5 REF.Article

THE EFFECT OF SIO2 PRECIPITATION IN SI ON GENERATION CURRENTS IN MOS CAPACITORSPATRICK WJ; HU SM; WESTDORP WA et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 3 PART. 1; PP. 1399-1402; BIBL. 9 REF.Article

MEASUREMENTS ON BULK-CHANNEL MOS CAPACITORS FOR DORK CURRENT CHARACTERIZATION OF PERISTALTIC CHARGE-COUPLED DEVICES.THEUNISSEN MJJ; SNEL J; WILLEMSE PHM et al.1977; PHILIPS RES. REP.; NETHERL.; DA. 1977; VOL. 32; NO 5-6; PP. 429-435; BIBL. 6 REF.Article

THEORY OF TRANSIENT BEHAVIOR OF PULSED MOS CAPACITORS.YOSHIDA M; SUGANO T.1976; ELECTRON. COMMUNIC. JAP.; U.S.A.; DA. 1976; VOL. 59; NO 8; PP. 61-68; BIBL. 16 REF.Article

PHOTORESPONSES IN IN2O3 TRANSPARENT GATE MOS CAPACITORSANDO T; FONG CK.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 8; PP. 1161-1167; BIBL. 18 REF.Article

PROPERTIES OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES WITH BURIED LAYERS AS DEDUCED FROM NONEQUILIBRIUM C(V) MEASUREMENTSBACH HG; FAHRNER WR.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 5; PP. 3848-3851; BIBL. 11 REF.Article

INTERFACE EDGE EFFECT AND ITS CONTRIBUTION TO THE FREQUENCY DISPERSION OF METAL-OXIDE-SEMICONDUCTOR ADMITTANCESUN YC; SAH CT.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 6; PP. 569-576; BIBL. 23 REF.Article

AN ALTERNATIVE METHOD OF SOLVING POISSON'S EQUATION FOR MOS CAPACITORSPFLEIDERER H.1980; SIEMENS FORSCH.-ENTWICKLUNGSBER.; ISSN 0370-9736; DEU; DA. 1980; VOL. 9; NO 6; PP. 319-324; ABS. GER; BIBL. 35 REF.Article

DETERMINATION OF SURFACE- AND BULK-GENERATION CURRENTS IN LOW-LEAKAGE SILICON MOS STRUCTURESBROTHERTON SD; GILL A.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 10; PP. 890-892; BIBL. 12 REF.Article

EXPERIMENTAL COMPARISON OF LIFETIME-MEASUREMENT TECHNIQUES FOR M.O.S. CAPACITORS.MORANDI C; SPADINI G.1978; I.E.E. J. SOLID-STATE ELECTRON DEVICES; GBR; DA. 1978; VOL. 2; NO 3; PP. 69-74; BIBL. 17 REF.Article

ETUDE DU CLAQUAGE INITIAL (NON INTRINSEQUE) ET DES DEFAUTS DANS LE DIELECTRIQUE DES STRUCTURES MOS A BASE DE SILICIUMDEMIDOVA GN; GAVRILIN NI; GLUDKIN OP et al.1983; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1983; VOL. 12; NO 1; PP. 24-28; BIBL. 11 REF.Article

STUDY OF SURFACE CHARGE IN VMOS STRUCTURESSTOEV I; MATEV I.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 10; PP. 987-988; BIBL. 5 REF.Article

ELECTRODE SPHAPE EFFECTS ON OXIDE CONDUCTION IN FILMS THERMALLY GROWN FROM POLYCRYSTALLINE SILICONHAN SHENG LEE; MARIN SP.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 7; PP. 3746-3750; BIBL. 8 REF.Article

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