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Results 1 to 25 of 449

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BESONDERHEITEN DES ENTWURFS INTEGRIERTER MIS-SCHALTKREISE = PARTICULARITES DE LA CONCEPTION DES CIRCUITS INTEGRES MOSROESSLER F.1982; RADIO FERNS. ELEKTRON.; ISSN 0033-7900; DDR; DA. 1982; VOL. 31; NO 1; PP. 39-43Article

MOS AREA SENSOR. II: LOW-NOISE MOS AREA SENSOR WITH ANTIBLOOMING PHOTODIODESOHBA S; NAKAI M; ANDO H et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1682-1687; BIBL. 17 REF.Article

INTEGRATED NMOS OUTPUT STAGE WITH LOW OUTPUT IMPEDANCECALZOLARI PU; MASETTI G; TURCHETTI C et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 6; PP. 218-220; BIBL. 8 REF.Article

VERS DES AMPLIFICATEURS OPERATIONNELS INTEGRES HOMOGENES EN MOSBAILLIEU F.1979; ELECTRON. APPL. INDUSTR.; FRA; DA. 1979; NO 276; PP. 71-75Article

WHY DON'T THESE PARTS WORK IN OUR CIRCUITS. PREVENTING CMOS FAILURE.HART W.1978; EVAL. ENGNG; USA; DA. 1978; VOL. 17; NO 5; PP. 42-44Article

CIRCUITOS INTEGRADOS MOS DE MEMORIAS DINAMICAS.RODRIGUEZ CUBERO V.1976; REV. TELEGR. ELECTRON.; ARGENT.; DA. 1976; VOL. 65; NO 768; PP. 770-772Article

P-MOS FIELD INVERSION VOLTAGE ENHANCEMENT VIA A CHROMIC ACID CLEANHARPER F.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 7; PP. 683-684; BIBL. 13 REF.Article

COSMIC-RAY-INDUCED ERRORS IN MOS DEVICESPICKEL JC; BLANDFORD JT JR.1980; J.E.E.E. TRANS. NUCL. SCI.; USA; DA. 1980; VOL. 27; NO 2; PP. 1006-1015; BIBL. 10 REF.Article

PROCESSOR FAMILY SPECIALIZES IN DEDICATED CONTROL.WEISSBERGER A; INWIN J; SOO NAM KIM et al.1976; ELECTRONICS; U.S.A.; DA. 1976; VOL. 49; NO 14; PP. 84-89Article

PERFORMANCE OF INTEGRATED DYNAMIC MOS AMPLIFIERSHOSTICKA BJ; HOEFFLINGER B; HERBST D et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 8; PP. 298-300; BIBL. 7 REF.Article

STEP LINEAR ANALYSIS OF MOS ICS WITH RESISTIVE, CAPACITIVE AND INDUCTIVE ELEMENTSANDREEV SK.1980; INT. J. ELECTRON. THEOR. EXP.; ISSN 0020-7217; GBR; DA. 1980; VOL. 48; NO 5; PP. 413-417; BIBL. 3 REF.Article

A DENSE GATE MATRIX LAYOUT METHOD FOR MOS VLSILOPEZ AD; LAW HFS.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 736-740; BIBL. 8 REF.Article

CMOS RELIABILITY.GALLACE LJ; PUJOL HL; SCHNABLE GL et al.1978; MICROELECTRON. AND RELIABIL.; GBR; DA. 1978; VOL. 17; NO 2; PP. 287-304; BIBL. 2 P.Article

DIGITALES FRONTPLATTENANZEIGEINSTRUMENT. = APPAREIL POUR AFFICHAGE NUMERIQUEDUMMER J; KLEIN R.1976; RADIO FERNSEHEN ELEKTRON.; DTSCH.; DA. 1976; VOL. 25; NO 13; PP. 422-434 (5P.)Article

MACTIS - A MASK CHECKING TIMING SIMULATORKAWAMURA M; HIRABAYASHI K.1980; I.E.E.E. TRANS. CIRCUITS SYST.; USA; DA. 1980; VOL. 27; NO 12; PP. 1276-1278; BIBL. 5 REF.Article

OVERLAY CONSIDERATIONS FOR THE SELECTION OF INTEGRATED-CIRCUIT PATTERN-LEVEL SEQUENCESKOPP RJ; STEVENS DJ.1980; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1980; VOL. 23; NO 7; PP. 79-87; BIBL. 11 REF.Article

A SIMPLIFIED TWO-DIMENSIONAL NUMERICAL ANALYSIS OF MOS DEVICES-DC CASEOH SY; DUTTON RW.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 11; PP. 2101-2108; BIBL. 12 REF.Article

APPLICATION OF LASER PROCESSING FOR IMPROVED OXIDES GROWN FROM POLYSILICONYARON G; HESS LD; KOKOROWSKI SA et al.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 5; PP. 964-969; BIBL. 10 REF.Article

RADIATION HARDENED MOS TECHNOLOGYHUGHES GW; BRUCKER GJ.1979; SOLID STATE TECHNOL.; USA; DA. 1979; VOL. 22; NO 7; PP. 70-76; BIBL. 40 REF.Article

MICRO-MINICOMPUTER TOSBACTM-40L: LSI MINICOMPUTER EMPLOYING TOSHIBA'S LATEST N-CHANNEL MOS LSI TECHNOLOGY, WITH VERY HIGH PERFORMANCE LIKE THAT OF CONVENTIONAL BIPOLAR MINICOMPUTERSKINOSHITA T.1978; TOSHIBA REV., INTERNATION ED.; JPN; DA. 1978; NO 114; PP. 18-22; BIBL. 2 REF.Article

MU COM-1600 MU PROCESSORS ACHIEVES MINICOMPUTER PERFORMANCEIZUMI T.1978; J. ELECTRON. ENGNG; JPN; DA. 1978; NO 141; PP. 58-61Article

SELBSTBAU-MIKROCOMPUTER MIT C MOS-BAUSTEINEN. = MICROORDINATEUR A CONSTRUIRE SOI-MEME UTILISANT DES COMPOSANTS CMOSSCHELL O.1978; ELEKTRONIK; DTSCH.; DA. 1978; VOL. 27; NO 4; PP. 79-84; BIBL. 11 REF.Article

UNE METHODE DE CONCEPTION RAPIDE ET FIABLE DES CIRCUITS INTEGRES AVEC CONTROLE AUTOMATIQUE DE L'IMPLANTATION.BERTAILS JC; ZIRPHILE J.1977; REV. TECH. THOMSON-C.S.F.; FR.; DA. 1977; VOL. 9; NO 4; PP. 717-735; ABS. ANGL. ALLEM.; BIBL. 10 REF.Article

CALMOS: A COMPUTER-AIDED LAYOUT PROGRAM FOR MOS/LST.BEKE H; SANSEN WMC; VAN OVERSTRAETEN R et al.1977; I.E.E.E.J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1977; VOL. 12; NO 3; PP. 281-282; BIBL. 7 REF.Article

MINI-MSINC - A MINICOMPUTER SIMULATOR FOR MOS CIRCUITS WITH MODULAR BUILT-IN MODEL.YOUNG TK; DUTTON RW.1976; I.E.E.E.J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1976; VOL. 11; NO 5; PP. 730-732; BIBL. 12 REF.Article

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