EBAM-ELECTRON BEAM ADDRESSABLE MEMORIES.SPELIOTIS DE.1976; IN: COMPCON'76 FALL. COMPUT... BY MILLIONS FOR MILLIONS. IEEE COMPUT. SOC. INT. CONF. 13. DIG. PAPERS; WASHINGTON, D.C.; 1976; LONG BEACH, CALIF.; IEEE COMPUTER SOC.; DA. 1976; PP. 329-331; BIBL. 4 REF.Conference Paper

DEVELOPMENT OF MOS MEMORY.1977; RES. DEVELOP. JAP. AWARD. OKOCHI MEMOR. PRIZE; JAP.; DA. 1977; PP. 72-75; BIBL. 3 REF.Article

DES LIGNES D'ALIMENTATION PERFORMANTES: LES BUS-BARRES POUR ALIMENTER LES CARTES-MEMOIRES DYNAMIQUES DES SYSTEMES A MICROPROCESSEURSMELEARD R.1978; ELECTRON. APPL. INDUSTR.; FRA; DA. 1978; NO 251; PP. 13-16Article

VIDEO-TEST-SIGNALGENERATOR MIT FESTWERTSPEICHERN = GENERATEUR DE SIGNAL D'ESSAI VIDEO A MEMOIRES MORTESSWART M.1981; FERNSEH-KINOTECH.; ISSN 0015-0142; DEU; DA. 1981; VOL. 35; NO 3; PP. 102-106; ABS. ENG; BIBL. 4 REF.Article

CIRCUITO INTEGRATO MOS M193 MEMORIA DI PROGRAMMA ELETTRONICA PER RICEVITORI DI TV = MEMOIRE MOS M193 EN CIRCUIT INTEGRE DE PROGRAMME ELECTRONIQUE POUR RECEPTEUR DE TELEVISIONTURRINI A.1979; ANTENNA NUOVA; ITA; DA. 1979; VOL. 51; NO 7-8; PP. 267-272Article

A 64 KBIT MOS DYNAMIC RANDOM ACCESS MEMORYNATORI K; OGURA M; IWAI H et al.1979; I.E.E.E. J. SOLID-STATE CIRCUITS; USA; DA. 1979; VOL. 14; NO 2; PP. 482-485; BIBL. 6 REF.Article

CELL LAYOUT BOOSTS SPEED OF LOW-POWER 64-K ROM.WILSON DR.1978; ELECTRONICS; USA; DA. 1978; VOL. 51; NO 7; PP. 96-99Article

V-MOS CONFIGURATION PACKS 64 KILOBITS INTO 175-MIL2 CHIP.HOLDT T; YU R.1978; ELECTRONICS; USA; DA. 1978; VOL. 51; NO 7; PP. 99-104Article

K RAM-FROM MICROS TO MAINFRAMES.COKER D; DAVIS K.1976; IN: COMPCON'76 FALL. COMPUT... BY MILLIONS FOR MILLIONS. IEEE COMPUT. SOC. INT. CONF. 13. DIG. PAPERS; WASHINGTON, D.C.; 1976; LONG BEACH, CALIF.; IEEE COMPUTER SOC.; DA. 1976; PP. 225-227Conference Paper

USE OF 168/E PROCESSORS AS STAND ALONE COMPUTING FACILITIESROST M.1982; NUCL. INSTRUM. METHODS PHYS. RES.; ISSN 0167-5087; NLD; DA. 1982; VOL. 202; NO 3; PP. 445-450; BIBL. 4 REF.Article

DENSE, INTERCHANGEABLE ROMS WORK WITH FAST MICROPROCESSORS.GREENE R.1978; ELECTRONICS; USA; DA. 1978; VOL. 51; NO 7; PP. 104-107Article

A THEORETICAL AND EXPERIMENTAL ANALYSIS OF THE BURIED-SOURCE VMOS DYNAMIC RAM CELLJENNE FB; BARNES JJ; RODGERS TJ et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 10; PP. 1204-1213; BIBL. 20 REF.Article

EAROMS IN DER PRAXIS = LA PRATIQUE DES MEMOIRES MORTES INTEGREES EFFACABLES ELECTRIQUEMENTMAIER R.1980; ELEKTRONIK; DEU; DA. 1980; VOL. 29; NO 7; PP. 48-50; BIBL. 2 REF.Article

REAPPRAISING CCD MEMORIES: CAN THEY STAND UP TO RAMS.GOSNEY WM.1979; ELECTRONICS; USA; DA. 1979; VOL. 52; NO 12; PP. 122-126; BIBL. 1 REF.Article

LEAKAGE STUDIES IN HIGH-DENSITY DYNAMIC MOS MEMORY DEVICESCHATTERJEE PK; TAYLOR GW; TASCH AF JR et al.1979; I.E.E.E. J. SOLID-STATE CIRCUITS; USA; DA. 1979; VOL. 14; NO 2; PP. 486-498; BIBL. 14 REF.Article

ONE-DIMENSIONAL LOGIC GATE ASSIGNMENT AND INTERVAL GRAPHSOHTSUKI T; MORI H; KUH ES et al.1979; COMPSAC 79. INTERNATIONAL COMPUTER SOFTWARE AND APPLICATIONS CONFERENCE. 3/1979/CHICAGO IL; USA; NEW YORK: IEEE; DA. 1979; PP. 101-106; BIBL. 12 REF.Conference Paper

A 64-KBIT DYNAMIC MOS RAMARAI E; IEDA N.1978; I.E.E.E. J. SOLID-STATE CIRCUITS; USA; DA. 1978; VOL. 13; NO 3; PP. 333-338; BIBL. 17 REF.Article

TECHNOLOGIE DES MEMOIRES. MEMOIRES A SEMICONDUCTEURS.BOREL J.1977; PARIS; TECH. ING.; DA. 1977; VOL. H1252; PP. (15P.); BIBL. 19 REF.; (INF. H30)Miscellaneous

THE EFFECT OF SUBSTRATE MATERIALS ON HOLDING TIME DEGRADATION IN MOS DYNAMIC RAMOTSUKA H; WATANABE K; NISHIMURA H et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 7; PP. 182-184; BIBL. 11 REF.Article

DESCRIPTION AND USE OF ELECTRON BEAM ACCESSED MEMORY SYSTEMSSMITH DO.1979; MICROELECTRON. J.; GBR; DA. 1979; VOL. 10; NO 4; PP. 5-11; BIBL. 7 REF.Article

OBSERVATIONS OF ELECTRON AND HOLE TRANSPORT THROUGH THIN SIO₂ FILMSHSU ST.1981; RCA REV.; ISSN 0033-6831; USA; DA. 1981; VOL. 42; NO 3; PP. 434-440; BIBL. 6 REF.Article

SCREENING METHODS AND EXPERIENCE WITH MOS MEMORYPAPPU RV; HARRIS E; YATES M et al.1978; MICROELECTRON. AND RELIABIL.; GBR; DA. 1978; VOL. 17; NO 1; PP. 193-199; BIBL. 3 REF.Conference Paper

FAULT-TOLERANT MEMORY SYSTEM ARCHITECTURE FOR RADIATION INDUCED ERRORSWHITE JB JR.1982; IEEE TRANS. AEROSP. ELECTRON. SYST.; ISSN 0018-9251; USA; DA. 1982; VOL. 18; NO 1; PP. 39-47; BIBL. 13 REF.Article

ELECTRICALLY ERASABLE MEMORY BEHAVES LIKE A FAST, NONVOLATILE RAMWALLACE C.1979; ELECTRONICS; USA; DA. 1979; VOL. 52; NO 10; PP. 128-131Article

LEAKAGE STUDIES IN HIGH-DENSITY DYNAMIC MOS MEMORY DEVICESCHATTERJEE PK; TAYLOR GW; TASCH AF JR et al.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 4; PP. 564-575; BIBL. 14 REF.Article