RADIATION EFFECTS ON THIN-OXIDE MOS CAPACITORS CAUSED BY ELECTRON BEAM EVAPORATION OF ALUMINUMHAMASAKI M.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 299-303; BIBL. 16 REF.Article

EFFECT OF HIGH FIELD STRESSES ON INTERFACE STATES OF N-MOS CAPACITORSJOURDAIN M; SALACE G; PETIT C et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 251-257; BIBL. 21 REF.Article

CHARGE MOTION IN SILICON METAL/OXIDE/SEMICONDUCTOR STRUCTURES. IISZABO R; NEMETH SALLAY M; SZEP IC et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 94; NO 2; PP. 143-148; BIBL. 18 REF.Article

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SI-SIO₂ INTERFACE STATES BASED ON OPTICALLY ACTIVATED CONDUCTANCE TECHNIQUESINGH RJ; SRIVASTAVA RS.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 319-323; BIBL. 17 REF.Article

SYNCHRONOUS DIGITAL TRANSMISSION TERMINALS IN DIGITAL LOCAL NETWORKKIMURA H; KOZUKA S; AIHARA KI et al.1983; REVIEW OF THE ELECTRICAL COMMUNICATION LABORATORIES; ISSN 508535; JPN; DA. 1983; VOL. 31; NO 1; PP. 24-31; BIBL. 8 REF.Article

SYSTEM ARCHITECTURE OF DIGITAL LOCAL SWITCHING SYSTEMYASUI T; EGAWA T; SATO T et al.1983; REVIEW OF THE ELECTRICAL COMMUNICATION LABORATORIES; ISSN 508535; JPN; DA. 1983; VOL. 31; NO 1; PP. 16-23; BIBL. 12 REF.Article

DISPOSITIF DE REFERENCE TEMPORELLE A STRUCTURE MOS AVEC ELECTRODE RESISTIVENEGODENKO ON; MIROSHNICHENKO SP; SUKHINOV AI et al.1982; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1982; VOL. 11; NO 3; PP. 229-230; BIBL. 4 REF.Article

IMPROVED STACKED-STRUCTURE OXIDE BY LASER ANNEALINGYARON G; HESS LD.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 4; PP. 284-286; BIBL. 8 REF.Article

EVIDENCE FOR IMPACT-IONIZED ELECTRON INJECTION IN SUBSTRATE OF N-CHANNEL MOS STRUCTURESMATSUNAGA J; KOHYAMA S.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 4; PP. 335-337; BIBL. 9 REF.Article

TECHNIQUE FOR INCREASING THE GAIN-BANDWITH PRODUCT OF N-M.O.S. AND P-M.O.S. INTEGRATED INVERTERS.TSIVIDIS YP.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 14; PP. 421-422; BIBL. 3 REF.Article

POUR REALISER DES ECONOMIES D'ENERGIE: LA MEMOIRE STATIQUE MOS AVEC ALIMENTATION PULSEE.GASCHET C.1977; ELECTRON. APPL. INDUSTR.; FR.; DA. 1977; NO 241; PP. 20-21Article

A SHORT CHANNEL MOS MODEL INCORPORATING SUBSTHRESHOLD AND AVALANCHE MULTIPLICATION CURRENTS.GUPTA VK; SCHWARTZ AW.1977; IN: ANNU. ASILOMAR CONF. CIRCUITS, SYST., COMPUT. 10; PACIFIC GROVE, CALIF.; 1976; NORTH HOLLYWOOD, CALIF.; WESTERN PERIODICALS; DA. 1977; PP. 122-126; BIBL. 24 REF.Conference Paper

MEMORY TYPES MULTIPLY, MICROPROCESSOR FAMILIES GROW.ALTMAN L.1976; ELECTRONICS; U.S.A.; DA. 1976; VOL. 49; NO 22; PP. 76-82 (5P.)Article

DIGITAL SWITCH LSIS FOR DIGITAL LOCAL SWITCHING SYSTEMNIKAIDO T; MIYAHARA N; HORIGUCHI S et al.1983; REVIEW OF THE ELECTRICAL COMMUNICATION LABORATORIES; ISSN 508535; JPN; DA. 1983; VOL. 31; NO 1; PP. 70-77; BIBL. 6 REF.Article

DTS-21 DIGITAL LOCAL SWITCHING SYSTEM PHYSICAL DESIGNKANEKO Y; FUKUHARA Y.1983; REVIEW OF THE ELECTRICAL COMMUNICATION LABORATORIES; ISSN 508535; JPN; DA. 1983; VOL. 31; NO 1; PP. 78-83; BIBL. 4 REF.Article

MODERATE INVERSION IN MOS DEVICESTSIVIDIS Y.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 11; PP. 1099-1104; BIBL. 4 REF.Article

INFLUENCE DES PROCESSUS TUNNEL DE GENERATION SUR LA RELAXATION DE LA CAPACITE DES STRUCTURES MDSV'YUKOV LA; SURIS RA.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 10; PP. 1768-1773; BIBL. 11 REF.Article

MOS AREA SENSOR. I: DESIGN CONSIDERATION AND PERFORMANCE OF AN N-P-N STRUCTURE 484 X 384 ELEMENT COLOR MOS IMAGERKOIKE N; TAKEMOTO I; SATOH K et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 741-746; BIBL. 9 REF.Article

TECHNOLOGIE UND SCHALTUNGSTECHNIK STATISCHER MOS-SPEICHER. = TECHNOLOGIE ET TECHNIQUE DE CIRCUIT DE MEMOIRES MOS STATIQUES.FISCHER WJ.1978; NACHR.-TECH., ELEKTRON.; DDR; DA. 1978; VOL. 28; NO 7; PP. 279-283; ABS. RUS/ENG; BIBL. 7 REF.Article

FABRICATION-RELATED EFFECTS IN METAL-ZNO-SIO₂-SI STRUCTURES.CORNELL ME; ELLIOTT JK; GUNSHOR RL et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 9; PP. 560-562; BIBL. 8 REF.Article

DIGITAL LOCAL SWITCHING SYSTEM HARDWARE DESIGNAOKI T; CHIBA Y; MIYAKE M et al.1983; REVIEW OF THE ELECTRICAL COMMUNICATION LABORATORIES; ISSN 508535; JPN; DA. 1983; VOL. 31; NO 1; PP. 32-39; BIBL. 6 REF.Article

DIGITAL LOCAL SWITCHING SYSTEM SOFTWARE DESIGNWATANABE H; KAWABE K; SAITO K et al.1983; REVIEW OF THE ELECTRICAL COMMUNICATION LABORATORIES; ISSN 508535; JPN; DA. 1983; VOL. 31; NO 1; PP. 48-57; BIBL. 5 REF.Article

ELECTRON POWER LOSS IN THE (100) N CHANNEL OF A SI METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR. I: INTRASUBBAND PHONON SCATTERINGKROWNE CM.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2441-2454; BIBL. 18 REF.Article

MODELLING OF SMALL MOS DEVICES AND DEVICE LIMITSCHATTERJEE PK; PING YANG; SHICHIJO H et al.1983; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1983; VOL. 130; NO 3; PP. 105-126; BIBL. 99 REF.Article