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NEW CMOS TECHNOLOGIESHOEFFLINGER B; ZIMMER G.1980; CONF. SER.-INST. PHYS.; ISSN 0305-2346; GBR; DA. 1980 PUBL. 1981; NO 57; PP. 85-139; BIBL. 2 P.Conference Paper

INTEGRAL PACKAGING FOR MILLIMETRE-WAVE GAAS IMPATT DIODES PREPARED BY MOLECULAR BEAM EPITAXYBAYRAKTAROGLU B; SHIH HD.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 9; PP. 327-329; BIBL. 11 REF.Article

LES MEMOIRES NON VOLATILES ELECTRIQUEMENT REPROGRAMMABLES. BILAN ET PERSPECTIVES. III: LES CELLULES MEMOIRES EAROM-BIPOLAIRESROUX P; CAZENAVE P; DOM JP et al.1983; ONDE ELECTRIQUE; ISSN 0030-2430; FRA; DA. 1983; VOL. 63; NO 5; PP. 39-45; ABS. ENG; BIBL. 3 REF.Article

A 6K-GATE CMOS GATE ARRAYTAGO H; KOBAYASHI T; KOBAYASHI M et al.1982; IEEE JOURNAL OF SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 5; PP. 907-912; BIBL. 7 REF.Article

LOCMOS LENDS ITSELF TO FULL SCALE INTEGRATION.BEER A.1977; NEW ELECTRON; G.B.; DA. 1977; VOL. 10; NO 3; PP. 28-32 (3P.)Article

MOS DEVICE AND TECHNOLOGY CONSTRAINTS IN VLSIYOUSSEF EL MANSY.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 4; PP. 567-573; BIBL. 26 REF.Article

MIKROCOMPUTER-FAMILIE TMS-1000 = LA FAMILLE DE MICRO-ORDINATEURS TMS-1000GOESSLER R.1980; ELEKTRONIK (MUENCH.); ISSN 0013-5658; DEU; DA. 1980; VOL. 29; NO 20; PP. 103-104Article

SCHNELLE STATISCHE RAM-BAUSTEINE = COMPOSANTS RAM STATIQUES RAPIDESCAPECE RP.1979; ELEKTRONIK; DEU; DA. 1979; VOL. 28; NO 20; PP. 39-50; BIBL. 3 REF.Article

C2L: A NEW HIGH-SPEED HIGH-DENSITY BULK CMOS TECHNOLOGY.DINGWALL AGF; STRICKER RE.1977; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1977; VOL. 12; NO 4; PP. 344-349; BIBL. 8 REF.Article

MEMORY ARRAYS WITH C.M.O.S. R.A.M.SWILLIAMS N.1979; NEW ELECTRON.; GBR; DA. 1979; VOL. 12; NO 6; PP. 36-42; (4 P.)Article

HIGH-DENSITY ONE-DEVICE DYNAMIC MOS MEMORY CELLSITOH K; SUNAMI H.1983; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1983; VOL. 130; NO 3; PP. 127-135; BIBL. 27 REF.Article

THE COMFET - A NEW HIGH CONDUCTANCE MOS-GATED DEVICERUSSELL JP; GOODMAN AM; GOODMAN LA et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 3; PP. 63-65; BIBL. 8 REF.Article

PENETRATION DU CHAMP ELECTRIQUE DANS LE SUPRACONDUCTEUR DE MICROPONTS JOSEPHSONAMATUNI L EH; GUBANKOV VN; ZAJTSEV AV et al.1982; ZURNAL EKSPERIMENTAL'NOJ I TEORETICESKOJ FIZIKI; ISSN 0044-4510; SUN; DA. 1982; VOL. 83; NO 5; PP. 1851-1863; ABS. ENG; BIBL. 19 REF.Article

RUNLENGTH-LIMITED CODE WITH SMALL ERROR PROPAGATIONSCHOUHAMER IMMINK KA.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 9; PP. 323-324; BIBL. 10 REF.Article

MOS-FESTWERTSPEICHER = MEMOIRES FIXES MOSVATJEVA D.1979; NACHR.-TECH., ELEKTRON.; DDR; DA. 1979; VOL. 29; NO 5; PP. 204-206; ABS. RUS/ENG/FREArticle

THE PERFORMANCE OF DSW MACHINES FOR VLSI RESEARCHSTEVENSON JJM; ROBERTSON JM.1982; MICROELECTRONICS; ISSN 0026-2692; GBR; DA. 1982; VOL. 13; NO 6; PP. 33-37; BIBL. 5 REF.Article

VERY-LOW-COST RAM WAVEFORM GENERATORMARGARIS N; LAOURDAS C; NIKOLAIDIS M et al.1980; I.E.E.E. TRANS. INDUSTR. ELECTRON. CONTROL INSTRUMENT.; USA; DA. 1980; VOL. 27; NO 1; PP. 39-41; BIBL. 11 REF.Article

A CMOS IC OSCILLATOR.MCVEY ES; LUNDY JW.1976; I.E.E.E. TRANS. INDUSTR. ELECTRON. CONTROL INSTRUMENT.; U.S.A.; DA. 1976; VOL. 23; NO 2; PP. 150-153; BIBL. 2 REF.Article

AL2O3 AS A RADIATION-TOLERANT CMOS DIELECTRIC.SCHLESIER KM; SHAW JM; BENYON CW JR et al.1976; R.C.A. REV.; U.S.A.; DA. 1976; VOL. 37; NO 3; PP. 358-388; BIBL. 24 REF.Article

CUSTOM INTEGRATED CIRCUITSREHMAN MA.1980; ELECTRON. ENG.; ISSN 0013-4902; GBR; DA. 1980; VOL. 52; NO 636; PP. 55-68; (7 P.)Article

COMPLEMENTARY DMOS PROCESS FOR LSI.MASUHARA T; MULLER RS.1976; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1976; VOL. 11; NO 4; PP. 453-458; BIBL. 3 REF.Article

CLASS AB CMOS AMPLIFIER FOR MICROPOWER SC FILTERSKRUMMENACHER F; VITTOZ E; DEGRAUWE M et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 13; PP. 433-435; BIBL. 6 REF.Article

QUALITY AND RELIABILITY OF COS/MOS.FERRIANI O.1977; NEW ELECTRON.; G.B.; DA. 1977; VOL. 10; NO 8; PP. 21-25 (3P.)Article

APPLICATION DE LA DIFFUSION PHOSPHORE PAR OXYDES DOPES AUX TECHNOLOGIES MOS SUR SSI.MONTIER M; ROCHE D.1976; VIDE; FR.; DA. 1976; NO 183 SUPPL.; PP. 190-194; ABS. ANGL.; (MATER. TECHNOL. MICROELECTR. TENDANCES ACTUELLES. COLLOQ. C.R.; MONTPELLIER; 1976)Conference Paper

A MICROPOWER COMPLEMENTARY-MOS D.C. AMPLIFIER.RIKOSKI RA; DIANORA M.1976; INTERNATION. J. ELECTRON.; G.B.; DA. 1976; VOL. 40; NO 3; PP. 237-240; BIBL. 6 REF.Article

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