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MECANISME CINETIQUE ET DE DIFFUSION DE L'ADHESION D'UN REVETEMENT POUDREUX AVEC LE SUPPORTBABUSHKIN GA; BULANOV V YA; SOLOV'EV LV et al.1983; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1983; VOL. 53; NO 3; PP. 554-556; BIBL. 7 REF.Article

TUNNELING THROUGH THE OPAQUE INVERTED PARABOLANI GJ; WONNEBERGER W.1983; ZEITSCHRIFT FUER NATURFORSCHUNG. TEIL A. PHYSIK, PHYSIKALISCHE CHEMIE, KOSMOPHYSIK; ISSN 0340-4811; DEU; DA. 1983; VOL. 38; NO 3; PP. 285-288; BIBL. 10 REF.Article

ZWEIDIMENSIONALE POTENTIALANALYSE IN MIS-STRUKTUREN = ANALYSE BIDIMENSIONNELLE DU POTENTIEL DANS DES STRUCTURES MOSSCHNEIDER J; NOTZOLD A.1983; NACHRICHTENTECHNIK. ELEKTRONIK; ISSN 0323-4657; DDR; DA. 1983; VOL. 33; NO 5; RUS/ENG; PP. 194-196; BIBL. 2 REF.Article

SIMPLIFIED LONG-CHANNEL MOSFET THEORYPIERRET RF; SHIELDS JA.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 2; PP. 143-147; BIBL. 6 REF.Article

EFFECT OF THE ELECTRON TEMPERATURE ON THE GATE-INDUCED CHARGE IN SMALL SIZE MOS TRANSISTORSLEBURTON JP; DORDA G.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 6; PP. 611-615; BIBL. 12 REF.Article

SELECTIVE LIFETIME DOPING IN SILICON BY LASER SCANNINGPARKER DL; FA YONG LIN; SHAN JI ZHU et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1718-1722; BIBL. 7 REF.Article

DEVICE CHARACTERIZATION ON MONOCRYSTALLINE SILICON GROWN OVER SIO2 BY THE ELO (EPITAXIAL LATERAL OVERGROWTH) PROCESSJASTRZEBSKI L; IPRI AC; CORBOY JF et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 2; PP. 32-35; BIBL. 11 REF.Article

AN ANALYTICAL BREADOWN MODEL FOR SHORT-CHANNEL MOSFET'SFU CHIEH HSU; PING KEUNG KO; SIMON TAM et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1735-1740; BIBL. 8 REF.Article

LOCALIZATION AND ELECTRON-ELECTRON INTERACTION EFFECTS IN SUBMICRON-WIDTH INVERSION LAYERSWHEELER RG; CHOI KK; GOEL A et al.1982; PHYSICAL REVIEW LETTERS; ISSN 0031-9007; USA; DA. 1982; VOL. 49; NO 22; PP. 1674-1677; BIBL. 15 REF.Article

A NEW ANALYSIS OF THE THRESHOLD VOLTAGE FOR NON-UNIFORM ION-IMPLANT MOSFET'SKUAN YU FU.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1810-1813; BIBL. 3 REF.Article

A NEW SELF-SCANNING METHOD FOR PRODUCING HIGH LUMINANCE IN A DC GAS-DISCHARGE BAR-GRAPH DISPLAY PANELMITANI E; OKAMOTO Y.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1745-1748; BIBL. 3 REF.Article

AC MODEL FOR MOS TRANSISTORS FROM TRANSIENT-CURRENT COMPUTATIONSTONG KY.1983; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1983; VOL. 130; NO 1; PP. 33-36; BIBL. 4 REF.Article

ALTERNATE SUBSTRATES TO ALUMINA FOR MICROELECTRONICS. IICOLEMAN M.1983; ELECTRI.ONICS; ISSN 512907; USA; DA. 1983; VOL. 29; NO 1; PP. 19-21; BIBL. 8 REF.Article

COMPUTER ANALYSIS OF DC FIELD AND CURRENT-DENSITY PROFILES OF DAR IMPATT DIODEDATTA DN; PATI SP; BANERJEE JP et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1813-1816; BIBL. 9 REF.Article

WHITE NOISE OF MOS TRANSISTORS OPERATING IN WEAK INVERSIONREIMBOLD G; GENTIL P.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1722-1725; BIBL. 7 REF.Article

COMPORTEMENT DES SEMI-CONDUCTEURS SOUMIS AUX RADIATIONS IONISANTESPERRIN M.1979; TOUTE ELECTRON.; FRA; DA. 1979; NO 443; PP. 49-52; BIBL. 1 REF.Article

ON THE I-V CHARACTERISTICS OF FLOATING-GATE MOS TRANSISTORSWANG ST.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 9; PP. 1292-1294; BIBL. 2 REF.Article

REALISATION OF THREE-VALUED C.M.O.S. CYCLING GATES.CARMONA JM; HUERTAS JL; ACHA JI et al.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 9; PP. 288-290; BIBL. 6 REF.Article

SCHALTUNGSBEISPIELE MIT (MOS-SCHALTKREISEN = EXEMPLE D'UTILISATION DES CIRCUITS CMOSTURINSKY G.1978; RADIO FERNSEHEN ELEKTRON.; DDR; DA. 1978; VOL. 27; NO 9; PP. 551-555; BIBL. 8 REF.Article

COMPLEMENTARY POWER MOS FET ACHIEVED FOR AUDIO APPLICATIONS.OHTA M; IGUCHI S.1977; J. ELECTRON. ENGNG; JAP.; DA. 1977; NO 129; PP. 46-49Article

PRUEFUNG KOMPLEXER ELEKTRONISCHER SCHALTUNGEN MIT MIKRORECHNER = CONTROLE, AU MOYEN D'UN MICRO-ORDINATEUR, DE MONTAGES ELECTRONIQUES COMPLEXESBOHME H.1983; NACHRICHTENTECHNIK. ELEKTRONIK; ISSN 0323-4657; DDR; DA. 1983; VOL. 33; NO 5; PP. 191-194; ABS. RUS/ENG; BIBL. 3 REF.Article

TRANSIENT ANALYSIS OF MOS TRANSISTORSSOO YOUNG OH; WARD DE; DUTTON RW et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 636-643; BIBL. 17 REF.Article

CMOS-SCHALTER UND -MULTIPLEXER OHNE LATCH UP-EFFEKT. II. = COMMUTATEUR ET MULTIPLEXEUR CMOS SANS EFFET DE VERROUILLAGE. IIFRENZEL D.1978; ELEKTRONIK; DTSCH.; DA. 1978; VOL. 27; NO 2; PP. 69-72Article

THE EFFECT OF THE MINORITY CARRIER DISTRIBUTION ON THE THRESHOLD VOLTAGE OF A MOSFETCHUNG YU WU; HWEY CHING CHIEN.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 5; PP. 371-381; BIBL. 8 REF.Article

DISPOSITIF DE RETARD CONTROLABLE POUR SIGNAUX ANALOGIQUES, A TRANSISTORS MOSKONTOROVICH BI; KLEVANSKAYA MV.1980; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1980; NO 3; PP. 142-144; BIBL. 3 REF.Article

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