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Prozess- und Bauelementesimulation für MOS-Schaltkreise = Simulation de processus et de composants pour circuits MOS = Process and component simulation for MOS circuitsSCHAARSCHMIDT, J; MÖSCHWITZER, A; SCHÜFFNY, R et al.Nachrichtentechnik. Elektronik. 1984, Vol 34, Num 3, pp 109-112, issn 0323-4657Article

High G MEMS integrated accelerometerDAVIES, B. R; BARRON, C. C; MONTAGUE, S et al.SPIE proceedings series. 1997, pp 52-62, isbn 0-8194-2459-5Conference Paper

Full-swing three-state driver for single-channel MOS integrated circuitsTORELLI, G; DEVECCHI, D.Alta frequenza. 1983, Vol 52, Num 6, pp 532-536, issn 0002-6557Article

A framework to evaluate technology and device design enhancements for MOS integrated circuitsSODINI, C. G; WONG, S. S; KO, P.-K et al.IEEE journal of solid-state circuits. 1989, Vol 24, Num 1, pp 118-127, issn 0018-9200, 10 p.Article

RELAX: a new circuit simulator for large scale MOS integrated circuitsLELARASMEE, E; SANGIOVANNI-VINCENTELLI, A.Computer-aided design. 1983, Vol 15, Num 5, pp 262-270, issn 0010-4485Article

MOS AREA SENSOR. II: LOW-NOISE MOS AREA SENSOR WITH ANTIBLOOMING PHOTODIODESOHBA S; NAKAI M; ANDO H et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1682-1687; BIBL. 17 REF.Article

BESONDERHEITEN DES ENTWURFS INTEGRIERTER MIS-SCHALTKREISE = PARTICULARITES DE LA CONCEPTION DES CIRCUITS INTEGRES MOSROESSLER F.1982; RADIO FERNS. ELEKTRON.; ISSN 0033-7900; DDR; DA. 1982; VOL. 31; NO 1; PP. 39-43Article

MOS AREA SENSOR. I: DESIGN CONSIDERATION AND PERFORMANCE OF AN N-P-N STRUCTURE 484 X 384 ELEMENT COLOR MOS IMAGERKOIKE N; TAKEMOTO I; SATOH K et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1676-1681; BIBL. 9 REF.Article

INTEGRATION VON FILTERN MIT LINEAREN MOS-SCHALTUNGEN = L'INTEGRATION DE FILTRES DANS LES CIRCUITS MOS LINEAIRESCHRISTIANSEN P; GEBHARDT PJ; KOHLBACHER G et al.1979; WISSENSCH. BER. A.E.G.-TELEFUNKEN; DEU; DA. 1979; VOL. 52; NO 1-2; PP. 131-138; ABS. ENG; BIBL. 19 REF.Article

DIGITALWERTKOMPARATOREN MIT NEUEN IS = COMPARATEUR DE VALEURS NUMERIQUES COMPORTANT DE NOUVEAUX CIRCUITS INTEGRESSTEINHAGEN H.1983; RADIO FERNSEHEN ELEKTRONIK; ISSN 0033-7900; DDR; DA. 1983; VOL. 32; NO 2; PP. 123-125; BIBL. 3 REF.Article

Comments on fault diagnosis of MOS combinational networksKUANG-WI CHIANG; VRANESIC, Z. G.IEEE transactions on computers. 1984, Vol 33, Num 10, issn 0018-9340, 947Article

Physical faults in MOS circuits and their coverage by different fault modelsBURGESS, N; DAMPER, R. I; TOTTON, K. A et al.IEE proceedings. Part E. Computers and digital techniques. 1988, Vol 135, Num 1, pp 1-9, issn 0143-7062Article

Direct observation and elimination of defects in gate oxide for reliable moslsisITSUMI, M.SPIE proceedings series. 1997, pp 147-159, isbn 0-8194-2765-9Conference Paper

COSMIC-RAY-INDUCED ERRORS IN MOS DEVICESPICKEL JC; BLANDFORD JT JR.1980; J.E.E.E. TRANS. NUCL. SCI.; USA; DA. 1980; VOL. 27; NO 2; PP. 1006-1015; BIBL. 10 REF.Article

PROCESSOR FAMILY SPECIALIZES IN DEDICATED CONTROL.WEISSBERGER A; INWIN J; SOO NAM KIM et al.1976; ELECTRONICS; U.S.A.; DA. 1976; VOL. 49; NO 14; PP. 84-89Article

P-MOS FIELD INVERSION VOLTAGE ENHANCEMENT VIA A CHROMIC ACID CLEANHARPER F.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 7; PP. 683-684; BIBL. 13 REF.Article

INTEGRATED NMOS OUTPUT STAGE WITH LOW OUTPUT IMPEDANCECALZOLARI PU; MASETTI G; TURCHETTI C et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 6; PP. 218-220; BIBL. 8 REF.Article

VERS DES AMPLIFICATEURS OPERATIONNELS INTEGRES HOMOGENES EN MOSBAILLIEU F.1979; ELECTRON. APPL. INDUSTR.; FRA; DA. 1979; NO 276; PP. 71-75Article

WHY DON'T THESE PARTS WORK IN OUR CIRCUITS. PREVENTING CMOS FAILURE.HART W.1978; EVAL. ENGNG; USA; DA. 1978; VOL. 17; NO 5; PP. 42-44Article

CIRCUITOS INTEGRADOS MOS DE MEMORIAS DINAMICAS.RODRIGUEZ CUBERO V.1976; REV. TELEGR. ELECTRON.; ARGENT.; DA. 1976; VOL. 65; NO 768; PP. 770-772Article

PERFORMANCE OF INTEGRATED DYNAMIC MOS AMPLIFIERSHOSTICKA BJ; HOEFFLINGER B; HERBST D et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 8; PP. 298-300; BIBL. 7 REF.Article

STEP LINEAR ANALYSIS OF MOS ICS WITH RESISTIVE, CAPACITIVE AND INDUCTIVE ELEMENTSANDREEV SK.1980; INT. J. ELECTRON. THEOR. EXP.; ISSN 0020-7217; GBR; DA. 1980; VOL. 48; NO 5; PP. 413-417; BIBL. 3 REF.Article

A DENSE GATE MATRIX LAYOUT METHOD FOR MOS VLSILOPEZ AD; LAW HFS.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 736-740; BIBL. 8 REF.Article

CMOS RELIABILITY.GALLACE LJ; PUJOL HL; SCHNABLE GL et al.1978; MICROELECTRON. AND RELIABIL.; GBR; DA. 1978; VOL. 17; NO 2; PP. 287-304; BIBL. 2 P.Article

DIGITALES FRONTPLATTENANZEIGEINSTRUMENT. = APPAREIL POUR AFFICHAGE NUMERIQUEDUMMER J; KLEIN R.1976; RADIO FERNSEHEN ELEKTRON.; DTSCH.; DA. 1976; VOL. 25; NO 13; PP. 422-434 (5P.)Article

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