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A CMOS magnetic field sensorPOPOVIC, R. S; BALTES, H. P.IEEE journal of solid-state circuits. 1983, Vol 18, Num 4, pp 426-428, issn 0018-9200Article

CAD needs with respect to fault modellingCOURTOIS, B.Rapport de recherche - IMAG. 1983, Num 415, issn 0750-7380, 25 p.Report

INTEGRAL PACKAGING FOR MILLIMETRE-WAVE GAAS IMPATT DIODES PREPARED BY MOLECULAR BEAM EPITAXYBAYRAKTAROGLU B; SHIH HD.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 9; PP. 327-329; BIBL. 11 REF.Article

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A dual-band 802.11a/b/g radio in 0.18μm CMOSPERRAUD, L; PINATEL, C; RECOULY, M et al.IEEE International Solid-State Circuits Conference. 2004, pp 94-95, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper

Characterization of poly-buffered LOCOS in manufacturing environmentGULDI, R. L; MCKEE, B; DAMMINGA, G. M et al.Journal of the Electrochemical Society. 1989, Vol 136, Num 12, pp 3815-3820, issn 0013-4651, 6 p.Article

A triple-level wired 24K-gate CMOS gate arraySAIGO, T; NIWA, K; OHTO, T et al.IEEE journal of solid-state circuits. 1985, Vol 20, Num 5, pp 1005-1011, issn 0018-9200Article

2-to-1 selector IC in 90-nm CMOS technology operating up to 50 Gb/sYAMAMOTO, Takuji; YAMAZAKI, Daisuke; HORINAKA, Minoru et al.IEEE Compound Semiconductor Integrated Circuit Symposium. 2004, pp 243-246, isbn 0-7803-8616-7, 1Vol, 4 p.Conference Paper

Dynamics of heavy-ion-induced latchup in CMOS structuresAOKI, T.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 11, pp 1885-1891, issn 0018-9383, 1Article

Architecture of a CMOS correlatorCORRY, A; PATEL, K.GEC journal of research. 1983, Vol 1, Num 1, pp 35-38, issn 0264-9187Article

High-speed high-resolution CMOS voltage comparatorNG, W. T; SALAMA, C. A. T.Electronics Letters. 1986, Vol 22, Num 6, pp 338-339, issn 0013-5194Article

L'amplificateur CMOS dans les circuits à capacités commutées = CMOS amplifier in switched capacity circuitsBAILLIEU, F; HERMEL, R.Revue de physique appliquée. 1985, Vol 20, Num 7, pp 465-482, issn 0035-1687Article

A simple high-gain CMOS voltage comparator circuitFREITAS, D. A; CURRENT, K. W.International journal of electronics. 1984, Vol 57, Num 2, pp 195-198, issn 0020-7217Article

L'avenir de la technologie CMOS de la microélectronique à la nanoelectroniqueDELEONIBUS, S.Le Vide (1995). 2000, pp 122-125, issn 1266-0167, GUIDEArticle

CMOS logic circuit optimum design for radiation toleranceHATANO, H; SHIBUYA, M.Electronics Letters. 1983, Vol 19, Num 23, pp 977-979, issn 0013-5194Article

HIMOS: an attractive flash EEPROM cell for embedded memory applicationsVAN HOUDT, J; GROESENEKEN, G; MAES, H. E et al.Microelectronics journal. 1993, Vol 24, Num 3, pp 190-194, issn 0959-8324Article

A 16K C-MOS PROM with polysilicon fusible linksMETZGER, L. R.IEEE journal of solid-state circuits. 1983, Vol 18, Num 5, pp 562-567, issn 0018-9200Article