The metal-organic vapour phase epitaxy growth of GaInAsP and GaAlInAs based graded refractive index separate confinement heterostructure multiple quantum well lasers incorporating linearly graded confinement layersCARR, N; WOOD, A. K; THOMPSON, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1991, Vol 9, Num 1-3, pp 355-360Conference Paper

Exciton electroabsorption at room temperature in InGaAs/InP multiquantum-well structures grown by atmospheric-pressure MOCVDMOSELEY, A. J; SCOTT, M. D; WILLIAMS, P. J et al.Electronics Letters. 1987, Vol 23, Num 10, pp 516-518, issn 0013-5194Article

Analog lightwave links for detector front-ends at the LHCBAIRD, A; DOWELL, J; KENYON, I et al.IEEE transactions on nuclear science. 1995, Vol 42, Num 4, pp 873-881, issn 0018-9499, 1Conference Paper

A comparison of MOVPE grown strained and unstrained MQW lasers incorporating continuously graded or single composition confinement layersCARR, N; THOMPSON, J; WOOD, A. K et al.Journal of crystal growth. 1992, Vol 124, Num 1-4, pp 723-729, issn 0022-0248Conference Paper

8×8 flipchip assembled InGaAs detector arrays for optical interconnectMOSELEY, A. J; KEARLEY, M. Q; MORRIS, R. C et al.Electronics Letters. 1991, Vol 27, Num 17, pp 1566-1567, issn 0013-5194Article

Influence of substrate dopant type on the optical properties of GaInAs/InP multiquantum well structures grown by low pressure MOVPEWOOD, A. K; THOMPSON, J; CARR, N et al.Journal of crystal growth. 1997, Vol 170, Num 1-4, pp 132-138, issn 0022-0248Conference Paper

The properties of MOVPE grown 1.3 μm DFB MQW lasers infilled with semi-insulating InP fabricated on semi-insulating substratesCARR, N; THOMPSON, J; JONES, G. G et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1617-1620, issn 0361-5235Conference Paper

Low voltage InGaAs/InP multiple quantum well reflective Fabry-Perot modulatorMOSELEY, A. J; THOMPSON, J; KEARLEY, M. Q et al.Electronics Letters. 1990, Vol 26, Num 13, pp 913-915, issn 0013-5194, 3 p.Article

High-speed GaInAs/InP multiquantum well avalanche photodiodes grown by atmospheric-pressure MOCVDMOSELEY, A. J; URQUHART, J; RIFFAT, J. R et al.Electronics Letters. 1988, Vol 24, Num 6, pp 313-315, issn 0013-5194Article

Quantum confined stark effect in GaInAs/InP single quantum wells grown by low pressure MOCPEMOSELEY, A. J; ROBBINS, D. J; MARSHALL, A. C et al.Electronics Letters. 1988, Vol 24, Num 21, pp 1301-1302, issn 0013-5194Article

High-efficiency, low-leakage MOCVD-grown GaInAs/AlInAs heterojunction photodiodes for detection to 2•4 μmMOSELEY, A. J; SCOTT, M. D; MOORE, A. H et al.Electronics Letters. 1986, Vol 22, Num 22, pp 1206-1207, issn 0013-5194Article

Ultra-low-capacitance flip-chip-bonded GaInAs PIN photodetector for long-wavelength high-data-rate fibre-optic systemsSUSSMANN, R. S; ASH, R. M; MOSELEY, A. J et al.Electronics Letters. 1985, Vol 21, Num 14, pp 593-595, issn 0013-5194Article

Selective area MOVPE growth for device integrationTHOMPSON, J; CARR, N; WOOD, A. K et al.Journal of crystal growth. 1993, Vol 126, Num 2-3, pp 317-324, issn 0022-0248Article

Low-voltage InGaAs/InP multiple-quantum-well reflective Fabry-Perot modulators for optical communications at microwave frequenciesKIRKBY, C. J. G; GOODWIN, M. J; MOSELEY, A. J et al.IEE proceedings. Part J. Optoelectronics. 1992, Vol 139, Num 4, pp 249-253, issn 0267-3932Article

Investigations on the influence of masks on the nature of selective area epitaxyTHOMPSON, J; WOOD, A. K; CARR, N et al.Journal of crystal growth. 1992, Vol 124, Num 1-4, pp 227-234, issn 0022-0248Conference Paper

Optoelectronic component arrays for optical interconnection of circuits and subsystemsGOODWIN, M. J; MOSELEY, A. J; KEARLEY, M. Q et al.Journal of lightwave technology. 1991, Vol 9, Num 12, pp 1639-1645, issn 0733-8724Article

CODE : a novel single step MOVPE technique for the fabrication of low-dimensional devices, quantum wires and quantum dotsMOSELEY, A. J; THOMPSON, J; KIGHTLEY, P et al.Journal of crystal growth. 1991, Vol 108, Num 1-2, pp 203-218, issn 0022-0248Article

Simultaneous bidirectional signalling using multiquantum well reflective modulator/detectorKIRKBY, C. J. G; ASH, R. M; MOSELEY, A. J et al.Electronics Letters. 1991, Vol 27, Num 25, pp 2373-2374, issn 0013-5194Article

The use of Inp-P-based semiconductor reflective stacks for enhanced device performanceTHOMPSON, J; WOOD, A. K; MOSELEY, A. J et al.Journal of crystal growth. 1990, Vol 107, Num 1-4, pp 860-866, issn 0022-0248Conference Paper

InGaAs/InP SAGM avalanche photodiodes incorporating a pseudoquaternary superlattice graded heterojunction grown by atmospheric-pressure MOCVDMOSELEY, A. J; URQUHART, J; HODSON, P. D et al.Electronics Letters. 1987, Vol 23, Num 17, pp 914-916, issn 0013-5194Article