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Reduced self-heating by strained silicon substrate engineeringO'NEILL, A; AGAIBY, R; VERHEYEN, P et al.Applied surface science. 2008, Vol 254, Num 19, pp 6182-6185, issn 0169-4332, 4 p.Conference Paper

Gate-extension overlap control by sb tilt implantation : Fundamentals and applications of advanced semiconductor devicesSHIBAHARA, Kentaro; MAEDA, Nobuhide.IEICE transactions on electronics. 2007, Vol 90, Num 5, pp 973-977, issn 0916-8524, 5 p.Article

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A compact and accurate MOSFET model with simple expressions for linear, saturation and sub-threshold regionsKATTO, Hisao.Solid-state electronics. 2006, Vol 50, Num 3, pp 301-308, issn 0038-1101, 8 p.Article

Comments on: Modeling MOSFET surface capacitance behavior under non-equilibriumJIN HE; XING ZHANG; YANGYUAN WANG et al.Solid-state electronics. 2006, Vol 50, Num 2, pp 259-262, issn 0038-1101, 4 p.Article

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Effect of Device Layout on the Stability of RF MOSFETsYONGHO OH; RIEH, Jae-Sung.IEEE transactions on microwave theory and techniques. 2013, Vol 61, Num 5, pp 1861-1869, issn 0018-9480, 9 p., 1Article

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A new constant-current technique for MOSFET parameter extractionLU, Chao-Yang; COOPER, James A.Solid-state electronics. 2005, Vol 49, Num 3, pp 351-356, issn 0038-1101, 6 p.Article

A novel scaling-parameter-dependent subthreshold swing model for double-gate (DG) SOI MOSFETs: including effective conducting path effect (ECPE)CHIANG, T. K.Semiconductor science and technology. 2004, Vol 19, Num 12, pp 1386-1390, issn 0268-1242, 5 p.Article

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