Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("MOSFET devices")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 116

  • Page / 5

Export

Selection :

  • and

A module generator of 2-level neuron MOS circuitsIKE, K; HIROSE, K; YASUURA, H et al.Computers & electrical engineering. 1998, Vol 24, Num 1-2, pp 33-41, issn 0045-7906Article

Radiation dosimeters for high dose by commercial PMOS transistors using normalized drain current as dosimetric parameterCHANG-LIAO, K.-S; WU, T.-L.Journal of Nuclear Science and Technology. 1997, Vol 34, Num 10, pp 992-995, issn 0022-3131Article

A neuron-MOS neural network using self-learning-compatible synapse circuitsSHIBATA, T; KOSAKA, H; ISHII, H et al.IEEE journal of solid-state circuits. 1995, Vol 30, Num 8, pp 913-922, issn 0018-9200Article

An MOS transistor with an optical rectification controlled gateMOAGAR-POLADIAN, G.Semiconductor science and technology. 1997, Vol 12, Num 2, pp 210-216, issn 0268-1242Article

A new constant-field scaling theory for MOSFET'sJIIN-JANG MAA; CHING-YUAN WU.I.E.E.E. transactions on electron devices. 1995, Vol 42, Num 7, pp 1262-1268, issn 0018-9383Article

Computation of current and transconductance of a nonuniformly doped channel MOSFET with an arbitrary doping profileCHONG-LUNG WANG.Solid-state electronics. 1995, Vol 38, Num 8, pp 1423-1429, issn 0038-1101Article

Methods to improve digital MOS macromodel accuracyJEONG-TAEK KONG; OVERHAUSER, D.IEEE transactions on computer-aided design of integrated circuits and systems. 1995, Vol 14, Num 7, pp 868-881, issn 0278-0070Article

Vertical MOS technology with sub-0.1μm channel lengthsGOSSNER, H; WITTMANN, F; EISELE, I et al.Electronics Letters. 1995, Vol 31, Num 16, pp 1394-1395, issn 0013-5194Article

A complete substrate current model for submicrometre and deep submicrometre MOSFETsHU, M.-C; JANG, S.-L.International journal of electronics. 1997, Vol 83, Num 2, pp 159-176, issn 0020-7217Article

Increased hole trapping in gate oxides as latent damage from plasma chargingBROZEK, T; VISWANATHAN, C. R.Semiconductor science and technology. 1997, Vol 12, Num 12, pp 1551-1558, issn 0268-1242Article

A simple method to extract the asymmetry in parasitic source and drain resistances from measurements on a MOS transistorRAYCHAUDHURI, A; KOLK, J; DEEN, M. J et al.I.E.E.E. transactions on electron devices. 1995, Vol 42, Num 7, pp 1388-1390, issn 0018-9383Article

Template-based MOSFET device modelGRAHAM, M. G; PAULOS, J. J; NYCHKA, D. W et al.IEEE transactions on computer-aided design of integrated circuits and systems. 1995, Vol 14, Num 8, pp 924-933, issn 0278-0070Article

Silicon piezoresistivity modelling: application to the simulation of MOSFETsWANG, Z. Z; SUSKI, J; COLLARD, D et al.Sensors and actuators. A, Physical. 1995, Vol 47, Num 1-3, pp 628-631, issn 0924-4247Conference Paper

TV transmitter PCU-1100/PCN-1600 with digital signal processing technologyOTAKE, T; SIKINA, C; KOMURO, K et al.NEC research & development. 1996, Vol 37, Num 3, pp 345-352, issn 0547-051XArticle

An approximate analysis and its application to the nonlinear performance of three MOSFET transconductance amplifiersMUHAMMAD TAHER ABUELMA'ATTI.Microelectronics journal. 1995, Vol 26, Num 6, pp 515-523, issn 0959-8324Article

Novel MOS-C balanced-input balanced-output filter using the current feedback operational amplifierMAHMOUD, S. A; SOLIMAN, A. M.International journal of electronics. 1998, Vol 84, Num 5, pp 479-485, issn 0020-7217Article

A floating voltage-controlled linear resistor and its application to active RC filtersAL-RUWAIHI, K. M.International journal of electronics. 1997, Vol 82, Num 5, pp 483-498, issn 0020-7217Article

Résultats de la plate-forme de plasma inductif forte puissance des Renardières : perspectives industrielles = Presentation of results from the high power inductive plasma platform of Renardières : Potential industrial perspectivesPAYA, B; TUAZ, F.REE. Revue de l'électricité et de l'électronique. 1997, Num 10, pp 51-56, issn 1265-6534Conference Paper

Deposition of ultra-thin oxide dielectrics for MOSFETs by a combination of low-temperature plasma-assisted oxidation, and intermediate and high-temperature rapid thermal processingLUCOVSKY, G; MISRA, V; HATTANGADY, S. V et al.Journal of non-crystalline solids. 1995, Vol 187, pp 60-65, issn 0022-3093Conference Paper

A class AB CMOS square-rooting circuitRIEWRUJA, V; ANUNTAHIRUNRAT, K; SURAKAMPONTORN, W et al.International journal of electronics. 1998, Vol 85, Num 1, pp 55-60, issn 0020-7217Article

Operation of a bipolar transistor with a tunnel MOS emitter and an induced base from 4.2 to 300 KGREKHOV, I. V; SCHMALZ, K; SHULEKIN, A. F et al.Cryogenics (Guildford). 1998, Vol 38, Num 6, pp 613-618, issn 0011-2275Article

An accurate transient model for BiCMOS gate optimizationJIMENEZ, V; ALCUBILLA, R.International journal of electronics. 1997, Vol 82, Num 5, pp 503-514, issn 0020-7217Article

An input-free VT extractor circuit using a series connection of three transistorsFILANOVSKY, I. M.International journal of electronics. 1997, Vol 82, Num 5, pp 527-532, issn 0020-7217Article

High-power linear silicon MOSFET for 820 ∼ 960 MHz base station applicationTANAKA, W; SARKISSIAN, G; KATO, H et al.NEC research & development. 1996, Vol 37, Num 1, pp 8-12, issn 0547-051XArticle

A submicron DC MOSFET model for simulation of analog circuitsAMITAVA CHATTERJEE; MACHALA, C. F; PING YANG et al.IEEE transactions on computer-aided design of integrated circuits and systems. 1995, Vol 14, Num 10, pp 1193-1207, issn 0278-0070Article

  • Page / 5