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The atomic structure of the UO2+x(110) surface and the effects of interstitial oxygen : An elevated-temperature STM studyMUGGELBERG, C; CASTELL, M. R; BRIGGS, G. A. D et al.Surface science. 1998, Vol 402-04, pp 673-677, issn 0039-6028Conference Paper

Molecular beam epitaxial growth and characterization of ZnSe on GaAsREICHOW, J; GRIESCHE, J; HOFFMANN, N et al.Journal of crystal growth. 1993, Vol 131, Num 3-4, pp 277-282, issn 0022-0248Article

An STM study of the UO2(001) surfaceMUGGELBERG, C; CASTELL, M. R; BRIGGS, G. A. D et al.Applied surface science. 1999, Vol 142, Num 1-4, pp 124-128, issn 0169-4332Conference Paper

Wire-like incorporation of dopant atoms during MBE growth on vicinal GaAs(001) surfacesDÄWERITZ, L; MUGGELBERG, C; HEY, R et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 783-787, issn 0038-1101Conference Paper

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