Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("MULTIJUNCTION STRUCTURE")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 496

  • Page / 20
Export

Selection :

  • and

VARIABLE SECTION OPTICAL-FIBER DELIVERY SYSTEM OF HIGH-POWER LASER RADIATION FOR SURGICAL USEBRENCI M; FALCIAI R; MAZZONI M et al.1983; APPLIED OPTICS; ISSN 0003-6935; USA; DA. 1983; VOL. 22; NO 3; PP. 373-375; BIBL. 6 REF.Article

INFLUENCE MUTUELLE DES PHOTOELEMENTS A LARGE BANDE ET A BANDE ETROITE LORS DU FONCTIONNEMENT DES HETEROPHOTOCONVERTISSEURS EN CASCADES GAASN-ALGAASP-ALGAAS-NALLAKHVERDIEV AM; ZADIRANOV YU M; RUMYANTSEV VD et al.1983; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1983; VOL. 17; NO 3; PP. 446-448; BIBL. 5 REF.Article

EXTINCTION PAR LE CHAMP DE LA CONDUCTIVITE SUPERFICIELLE ET CONDUCTIVITE PAR SAUTS BIDIMENSIONNELLE DANS INAS PTIMCHENKO IN; SMIRNOVA NN; STUS NM et al.1983; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1983; VOL. 17; NO 3; PP. 422-425; BIBL. 10 REF.Article

HETEROSTRUCTURES DU SYSTEME AL-GA-AS A LOCALISATION DES REGIONS DE PASSAGE DU COURANTALFEROV ZH I; ANDREEV VM; EGOROV BV et al.1977; ZH. TEKH. FIZ.; S.S.S.R.; DA. 1977; VOL. 47; NO 8; PP. 1782-1790; BIBL. 14 REF.Article

CARACTERISTIQUES PHOTOELECTRIQUES DES STRUCTURES P-PI -NU -N A BASE DE GAAS(FE)VILISOV AA; GAMAN VI; DIAMANT VM et al.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 4; PP. 625-628; BIBL. 8 REF.Article

MISE EN EVIDENCE D'UNE INSTABILITE DE L'EFFET PHOTOELECTRIQUE DANS DES STRUCTURES MULTIJONCTIONS MATRICIELLES BASEES SUR DU SILICIUMAGAEV YA; BAZAROV BA; ZADDEH VV et al.1978; IZVEST. AKAD. NAUK TURKM. S.S.R., FIZ.-TEKH. KHIM. GEOL. NAUK; SUN; DA. 1978; NO 2; PP. 19-23; ABS. ENG; BIBL. 7 REF.Article

SUR LE COEFFICIENT DE VERROUILLAGE D'UNE STRUCTURE P-N-P-NPALKO EH V; UVAROV AI.1978; RADIOTEKH. I ELEKTRON.; SUN; DA. 1978; VOL. 28; NO 11; PP. 2391-2395; BIBL. 9 REF.Article

RELAXATION OF THE EXCESS CONDUCTIVITY IN MULTILAYER STRUCTURES WITH P-N JUNCTIONS.AGAREV VN; STAFEYEV VI.1977; RADIO ENGNG ELECTRON. PHYS.; U.S.A.; DA. 1977; VOL. 22; NO 1; PP. 121-127; BIBL. 5 REF.Article

ETUDE DE L'INFLUENCE D'UNE IRRADIATION GAMMA SUR LES STRUCTURES P-N-P-NKORSHUNOV FP; KUL'GACHEV VI; SHUPENEV VA et al.1977; VESCI AKAD. NAVUK B.S.S.R., FIZ.-MAT. NAVUK; S.S.S.R.; DA. 1977; NO 2; PP. 125-126; BIBL. 2 REF.; RESUME DE L'ARTICLE NO. 1742-76 DEPOSE AU VINITI.Article

CONCENTRATION PROFILING FOR HIGH VOLTAGE P+-N-N+ DIODESSUNDERSINGH VP; GHATOL AA.1983; INTERNATIONAL JOURNAL OF ELECTRONICS THEORETICAL & EXPERIMENTAL; ISSN 0020-7217; GBR; DA. 1983; VOL. 54; NO 1; PP. 127-137; BIBL. 11 REF.Article

TRANSPORT DES PORTEURS DANS UNE STRUCTURE P-I-P A HAUT NIVEAU D'INJECTIONPALKO EH V; UVAROV AI.1978; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1978; VOL. 12; NO 4; PP. 791-797; BIBL. 4 REF.Article

00 V AND 5000 A PEAK REVERSE BLOCKING DIODE THYRISTOR.CHU CK; JOHNSON JE; BREWSTER JB et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 537-540; BIBL. 6 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

CARRIER DISTRIBUTION AND LOW-FIELD RESISTANCE IN SHORT N+-N--N+ AND N+-P--N+ STRUCTURESVAN DER ZIEL A; SHUR MS; LEE K et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 2; PP. 128-137; BIBL. 14 REF.Article

MASKED AND SELECTIVE THERMAL OXIDATION OF GAAS-GA1-X ALXAS MULTILAYER STRUCTURESHONG DU LIU; BEI ZHANG; DE HUANG WANG et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 7; PP. 557-559; BIBL. 7 REF.Article

COMMUTATION D'UNE STRUCTURE P-N-P-N A REGIONS DE BASE AVEC BANDE INTERDITE VARIABLEASHKINAZI GA; TOGATOV VV.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 7; PP. 1259-1265; BIBL. 8 REF.Article

THEORIE DES PROPRIETES PHOTOELECTRIQUES DES STRUCTURES AVEC UNE DISTRIBUTION UNIDIMENSIONNELLEMENT NON UNIFORME DES IMPURETESNEUSTROEV LN; OSIPOV VV.1980; MIKROELEKTRONIKA; SUN; DA. 1980; VOL. 9; NO 2; PP. 99-106; BIBL. 11 REF.Article

EFFECT OF EXTERNAL RESISTANCE IN THE VICINITY OF CURRENT-MODE SECOND BREAKDOWN IN SI PNN+ STRUCTURES.HANE K; SUZUKI T.1978; JAP. J. APPL. PHYS.; JAP.; DA. 1978; VOL. 17; NO 5; PP. 857-864; BIBL. 8 REF.Article

ON THE THEORY OF SUBLINEAR CURRENT-VOLTAGE CHARACTERISTICS OF SEMICONDUCTOR STRUCTURES.LEIDERMAN AY; KARAGEORGY ALKALAEV PM.1978; SOLID STATE COMMUNIC.; G.B.; DA. 1978; VOL. 25; NO 10; PP. 781-783; BIBL. 9 REF.Article

ON THE THEORY OF SUBLINEAR CURRENT-VOLTAGE CHARACTERISTICS OF SEMICONDUCTOR STRUCTURESLEIDERMAN AY; KARAGEORGY ALKALAEV PM.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 27; NO 4; PP. 339-341; BIBL. 9 REF.Article

A COMPARISON OF EFFECTIVE DOPING DENSITIES OF COMPOSITE STRUCTURES BY HALL AND MAGNETORESISTANCE MEASUREMENTS.UPADHYAYULA LC; ENSTROM RE; NUESE CJ et al.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 12; PP. 1348-1350; BIBL. 2 REF.Article

PARTICULARITES DES PROPRIETES A HAUTE FREQUENCE D'UNE STRUCTURE DE DIODE SYMETRIQUE DANS LAQUELLE LES ELECTRONS SONT EN MOUVEMENT BALISTIQUEBANNOV NA; RYZHIJ VI; FEDIRKO VA et al.1983; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1983; VOL. 17; NO 1; PP. 57-60; BIBL. 7 REF.Article

RELAXATION DU COURANT ET DU COURANT PHOTOELECTRIQUE DE STRUCTURES STRATIFIEES A JONCTIONS PN. STRUCTURES MULTICOUCHES BASEES SUR DES SEMICONDUCTEURS A ZONES ETROITESAGAREV VN; STAFEEV VI.1977; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1977; VOL. 22; NO 11; PP. 2335-2340; BIBL. 7 REF.Article

SPREADING RESISTANCE CALCULATIONS FOR GRADED STRUCTURES BASED ON THE UNIFORM FLUX SOURCE BOUNDARY CONDITION.LEONG MS; CHOO SC; WANG CC et al.1977; SOLID STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 3; PP. 255-264; BIBL. 13 REF.Article

CALCULATION OF THE TURN-ON PROCESS IN A QUASILINEAR MODEL OF THE P-N-P-N STRUCTURE.TOGATOV VV.1977; RADIO ENGNG ELECTRON. PHYS.; USA; DA. 1977; VOL. 22; NO 5; PP. 102-107; BIBL. 6 REF.; DE RUSArticle

POLYSILICON N+P-N+ STRUCTURES FOR MEMORY REDUNDANCYGREVE DW; TRAN LV.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 8; PP. 1313-1318; BIBL. 17 REF.Article

  • Page / 20