An analysis of AC surface photovoltages for obtaining surface recombination velocities in silicon wafersMUNAKATA, C.Semiconductor science and technology. 1990, Vol 5, Num 3, pp 206-210, issn 0268-1242, 5 p.Article

Analysis of ac surface photovoltages in accumulation regionMUNAKATA, C.Japanese journal of applied physics. 1988, Vol 27, Num 5, pp 759-764, issn 0021-4922, 1Article

Frequency response of the strong inversion layer in a silicon waferMUNAKATA, C.Japanese journal of applied physics. 1983, Vol 22, Num 12, pp 1893-1896, issn 0021-4922Article

A NON-DESTRUCTIVE METHOD FOR MEASURING LIFETIMES FOR MINORITY CARRIERS IN SEMICONDUCTOR WAFERS USING FREQUENCY-DEPENDENT AC PHOTOVOLTAGESMUNAKATA C; HONMA N; ITOH H et al.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 2; PART. 2; PP. L103-L105; BIBL. 15 REF.Article

CHANGE OF APPARENT SENSITIVITY OF AN ELECTRON RESIST DUE TO BACKING MATERIALSSAITOU N; MUNAKATA C; HONDA Y et al.1972; JAP. J. APPL. PHYS.; JAP.; DA. 1972; VOL. 11; NO 7; PP. 1061-1062; BIBL. 5 REF.Serial Issue

DRIFT OF AMPLIFICATION FACTOR AND ITS EFFECTS IN A TRI-ELECTRODE ELECTRON GUNMUNAKATA C; HONDA Y; MIURA Y et al.1972; INTERNATION. J. ELECTRON.; G.B.; DA. 1972; VOL. 33; NO 2; PP. 209-216; BIBL. 3 REF.Serial Issue

A PHOTOVOLTAIC METHOD FOR EVALUATING JUNCTION CHARACTERISTICS USING CUT-OFF FREQUENCYHONMA N; MUNAKATA C; ITOH H et al.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 12; PP. 1786; BIBL. 3 REF.Article

DEFLECTION ERRORS DUE TO SAMPLE POTENTIAL IN ELECTRON BEAM LITHOGRAPHY MACHINEMIYAZAKI M; SAITOU N; MUNAKATA C et al.1981; J. PHYS. E; ISSN 0022-3735; GBR; DA. 1981; VOL. 14; NO 2; PP. 194-195; BIBL. 3 REF.Article

CURRENT CONTROL TECHNIQUE IN ELECTRON BEAM LITHOGRAPHYMUNAKATA C; KURODA K; TANIGUCHI Y et al.1980; J. PHYS. E; ISSN 0022-3735; GBR; DA. 1980; VOL. 13; NO 2; PP. 163-164; BIBL. 3 REF.Article

Nondestructive diagnostic method using ac surface photovoltage for detecting metallic contaminants in silicon wafersSHIMIZU, H; MUNAKATA, C.Journal of applied physics. 1993, Vol 73, Num 12, pp 8336-8339, issn 0021-8979Article

AC photovoltaic images of thermally oxidized P-type silicon wafers contaminated with metalsSHIMIZU, H; MUNAKATA, C.Japanese journal of applied physics. 1992, Vol 31, Num 8, pp 2319-2321, issn 0021-4922, 1Article

Frequency-dependent photovoltage-generating areas in a strongly-inverted oxidized p-type silicon waferMUNAKATA, C; HONMA, N.Japanese journal of applied physics. 1987, Vol 26, Num 10, pp 1663-1666, issn 0021-4922, 1Article

OBSERVATION OF P-N JUNCTIONS WITH A FLYING-SPOT SCANNER USING A CHOPPED PHOTON BEAMMUNAKATA C; YAGI K; WARABISAKO T et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 4; PART. 1; PP. 624-632; BIBL. 38 REF.Article

Characterization of damaged layer using AC surface photovoltage in silicon wafersSHIMIZU, H; MUNAKATA, C.Japanese journal of applied physics. 1993, Vol 32, Num 9A, pp 3780-3781, issn 0021-4922, 1Article

Effect of aluminum on ac surface photovoltages in thermally oxidized n-type silicon wafersSHIMIZU, H; MUNAKATA, C.Japanese journal of applied physics. 1992, Vol 31, Num 3, pp 729-731, issn 0021-4922, 1Conference Paper

Photovoltaic evidence for interface-trapped charge in x-ray-irradiated oxidized n-type silicon wafersMUNAKATA, C; WATANABE, K.Semiconductor science and technology. 1991, Vol 6, Num 7, pp 612-615, issn 0268-1242, 4 p.Article

Saturation of ac surface photovoltages due to photocapacitances in a strongly-inverted oxidized p-type silicon waferMUNAKATA, C; HONMA, N.Japanese journal of applied physics. 1987, Vol 26, Num 4, pp 564-567, issn 0021-4922, 1Article

Nondestructive diagnostic method using AC surface photovoltage in silicon wafers rinsed with metal-contaminated water solutionsSHIMIZU, H; MUNAKATA, C.Japanese journal of applied physics. 1993, Vol 32, Num 9A, pp 3775-3779, issn 0021-4922, 1Article

Measurement of a Gaussian laser beam spot size using a boundary diffraction waveKIMURA, S; MUNAKATA, C.Applied optics. 1988, Vol 27, Num 1, pp 84-88, issn 0003-6935Article

Method for measuring the spot size of a laser beam using a boundary-diffraction waveKIMURA, S; MUNAKATA, C.Optics letters. 1987, Vol 12, Num 8, pp 552-554, issn 0146-9592Article

Confirmation of aluminum-induced negative charge in thermally oxidized silicon wafers using AC surface photovoltage methodSHIMIZU, H; MUNAKATA, C.Japanese journal of applied physics. 1994, Vol 33, Num 6A, pp 3335-3338, issn 0021-4922, 1Article

Nondestructive characterization of surface contaminants in silicon wafers using AC surface photovoltage methodSHIMIZU, H; MUNAKATA, C.Materials transactions - JIM. 1994, Vol 35, Num 11, pp 827-832, issn 0916-1821Article

Recombination lifetime in a gold-doped p-type silicon crystalWATANABE, K; MUNAKATA, C.Semiconductor science and technology. 1993, Vol 8, Num 2, pp 230-235, issn 0268-1242Article

Iron-induced alternating current surface photovoltages in n-type silicon wafersSHIMIZU, H; MUNAKATA, C.Applied physics letters. 1993, Vol 62, Num 3, pp 276-277, issn 0003-6951Article

Effects of chemical surface treatments on the generation of AC surface photovoltages in n-type silicon wafersSHIMIZU, H; MUNAKATA, C.Semiconductor science and technology. 1991, Vol 6, Num 8, pp 756-760, issn 0268-1242, 5 p.Article