ROLE OF POINT DEFECTS IN THE GROWTH OF THE OXIDATION-INDUCED STACKING FAULTS IN SILIUM. II: RETROGROWTH, EFFECT OF HCL OXIDATION AND ORIENTATIONMURARKA SP.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 21; NO 2; PP. 692-701; BIBL. 32 REF.Article

DIFFUSION AND SEGREGATION OF ION-IMPLANTED BORON IN SILICON IN DRY OXYGEN AMBIENTS.MURARKA SP.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 12; NO 6; PP. 2502-2519; BIBL. 33 REF.Article

FORWARD I-V CHARACTERISTICS OF PT/N-GAAS SCHOTTKY BARRIER CONTACTS.MURARKA SP.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 9; PP. 985-991; BIBL. 27 REF.Article

THERMAL OXIDATION OF GAAS.MURARKA SP.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 4; PP. 180-181; BIBL. 8 REF.Article

R.F. DIODE SPUTTERED PLATINUM FILMS.MURARKA SP.1974; THIN SOLID FILMS; NETHERL.; DA. 1974; VOL. 23; NO 3; PP. 323-336; BIBL. 18 REF.Article

OXYGEN PARTIAL PRESSURE DEPENDENCE OF THE FIXED SURFACE STATE CHARGE Q_SS DUE TO THERMAL OXIDATION OF N-(100) SILICONMURARKA SP.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 9; PP. 587-588; BIBL. 22 REF.Article

OXYGEN PRESSURE DEPENDENCE OF THE RETROGROWTH OF OXIDATION-INDUCED STACKING FAULTS IN (100) SILICON.MURARKA SP.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 4; PP. 2513-2516; BIBL. 9 REF.Article

ROLE OF POINT DEFECTS IN THE GROWTH OF THE OXIDATION-INDUCED STACKING FAULTS IN SILICON.MURARKA SP.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 16; NO 6; PP. 2849-2857; BIBL. 53 REF.Article

REACTIVELY SPUTTERED TITANIUM CARBIDE THIN FILMS: PREPARATION AND PROPERTIESEIZENBERG M; MURARKA SP.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 6; PP. 3190-3194; BIBL. 13 REF.Article

SILICIDE FORMATION IN THIN COSPUTTERED (TANTALUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO₂MURARKA SP; FRASER DB.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 3; PP. 1593-1598; BIBL. 12 REF.Article

SILICIDE FORMATION IN THIN COSPUTTERED (TITANIUM+SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO₂MURARKA SP; FRASER DB.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 1; PP. 350-356; BIBL. 6 REF.Article

THERMAL OXIDATION OF HAFNIUM SILICIDE FILMS ON SILICONMURARKA SP; CHANG CC.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 7; PP. 639-641; BIBL. 12 REF.Article

CONTAMINATION OF SILICON AND OXIDIZED SILICON WAFERS DURING PLASMA ETCHINGMURARKA SP; MOGAB CJ.1979; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1979; VOL. 8; NO 6; PP. 763-779; BIBL. 6 REF.Article

THIN FILM INTERACTION BETWEEN TITANIUM AND POLYCRYSTALLINE SILICONMURARKA SP; FRASER DB.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 1; PP. 342-349; BIBL. 19 REF.Article

HEXAGONAL WSI₂ IN COSPUTTERED (TUNGSTEN AND SILICON) MIXTUREMURARKA SP; READ MH; CHANG CC et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 12; PP. 7450-7452; BIBL. 17 REF.Article

PLASMA-GROWN OXIDE ON GAAS. SEMIQUANTITATIVE CHEMICAL DEPTH PROFILES OBTAINED USING AUGER SPECTROSCOPY AND NEUTRON ACTIVATION ANALYSIS.CHANG CC; CHANG RPH; MURARKA SP et al.1978; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1978; VOL. 125; NO 3; PP. 481-487; BIBL. 13 REF.Article

A THERMO-CHEMICAL STUDY OF THE DEFECT STRUCTURE OF BARIUM OXIDEELO RB; MURARKA SP; SWALIN RA et al.1973; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1973; VOL. 34; NO 1; PP. 97-106; BIBL. 19 REF.Serial Issue

EFFECT OF GROWTH PARAMETERS ON THE CVD OF BORON NITRIDE AND PHOSPHORUS-DOPED BORON NITRIDEMURARKA SP; CHANG CC; WANG DNK et al.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 11; PP. 1951-1957; BIBL. 4 REF.Article

INTERDIFFUSIONS IN THIN-FILM AU ON PT ON GAAS(100) STUDIED WITH AUGER SPECTROSCOPY.CHANG CC; MURARKA SP; KUMAR V et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 10; PP. 4237-4243; BIBL. 19 REF.Article

SCANNING ELECTRON MICROSCOPE STUDIES OF PREMATURE BREAKDOWN SITES IN GAAS IMPATT TESTERS.MARCUS RB; HASZKO SE; MURARKA SP et al.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 5; PP. 692-699; BIBL. 12 REF.Article

REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTSMURARKA SP; FRASER DB; SINHA AK et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 474-482; BIBL. 16 REF.Article

OXIDATION OF SILICON WITHOUT THE FORMATION OF STACKING FAULTS.MURARKA SP; LEVINSTEIN HJ; MARCUS RB et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 9; PP. 4001-4003; BIBL. 10 REF.Article

RESISTIVITIES OF THIN FILM TRANSITION METAL SILICIDESMURARKA SP; READ MH; DOHERTY CJ et al.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 2; PP. 293-301; BIBL. 32 REF.Article

COSPUTTERED MOLYBDENUM SILICIDES ON THERMAL SIO₂MURARKA SP; FRASER DB; RETAJCZYK TF JR et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 10; PP. 5380-5385; BIBL. 21 REF.Article

MOS COMPTABILITY OF HIGH-CONDUCTIVITY TASI₂/NT POLY-SI GATESSINHA AK; LINDENBERGER WS; FRASER DB et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1425-1430; BIBL. 14 REF.Article