ELECTRICAL CHARACTERISTICS OF HEAVILY ARSENIC AND PHOSPHORUS DOPED POLYCRYSTALLINE SILICONMUROTA J; SAWAI T.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 5; PP. 3702-3708; BIBL. 24 REF.Article

CHANGES IN THICKNESS AND INFRARED SPECTRUM OF PHOSPHOSILICATE GLASS FILM WITH HEAT-TREATMENT IN H₂ GASTAKEUCHI H; MUROTA J.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 3; PP. 752-754; BIBL. 6 REF.Article

RELATIONSHIP BETWEEN TOTAL ARSENIC AND ELECTRICALLY ACTIVE ARSENIC CONCENTRATIONS IN SILICON PRODUCED BY THE DIFFUSION PROCESSMUROTA J; ARAI E; KOBAYASHI K et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 2; PP. 804-808; BIBL. 19 REF.Article

A NOVEL MOS PROM USING A HIGHLY RESISTIVE POLY-SI RESISTORTANIMOTO M; MUROTA J; OHMORI Y et al.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 3; PP. 517-520; BIBL. 7 REF.Article

ARSENIC DOPING OF CHEMICAL VAPOR DEPOSITED POLYCRYSTALLINE SILICON USING SIH₄-H₂-ASH₃ GAS SYSTEMMUROTA J; ARAI E; KUDO K et al.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 5; PP. 1188-1192; BIBL. 22 REF.Article

STEPPED ELECTRODE TRANSISTOR: SET.SAKAI T; SUNOHARA Y; SAKAKIBARA Y et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 43-46; BIBL. 1 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

CARRIER CONCENTRATION AND HALL MOBILITY IN HEAVILY ARSENIC-DIFFUSED SILICONMATSUMOTO S; NIIMI T; MUROTA J et al.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 7; PP. 1650-1652; BIBL. 9 REF.Article

Trench coverage characteristics of polysilicon deposited by thermal decomposition of silaneMORIE, T; MUROTA, J.Japanese journal of applied physics. 1984, Vol 23, Num 7, pp L482-L484, issn 0021-4922Article

Low-temperature epitaxial growth of Si/Si_1-xGe_x/Si heterostructure by chemical vapor deposition : Silicon molecular beam epitaxyMUROTA, J; ONO, S.Japanese journal of applied physics. 1994, Vol 33, Num 4B, pp 2290-2299, issn 0021-4922, 1Conference Paper

Molybdenum film formation by low pressure chemical vapor deposition = Formation de couches de molybdène par dépôt chimique en phase vapeur à basse pressionYASUDA, K; MUROTA, J.Japanese journal of applied physics. 1983, Vol 22, Num 10, pp L615-L617, issn 0021-4922Article

Physical properties of lime powder produced by Powder-Particle Fluidized BedTASHIMO, T; MUROTA, J; SUTO, T et al.Journal of chemical engineering of Japan. 2000, Vol 33, Num 3, pp 365-371, issn 0021-9592Article

Calcination of fine limestone particles by a Powder-Particle Fluidized BedTASHIMO, T; SUTO, T; MUROTA, J et al.Journal of chemical engineering of Japan. 1999, Vol 32, Num 3, pp 374-378, issn 0021-9592Article

Silicon atomic layer growth controlled by flash heating in chemical vapor deposition using SiH₄ gasMUROTA, J; SAKURABA, M; ONO, S et al.Applied physics letters. 1993, Vol 62, Num 19, pp 2353-2355, issn 0003-6951Article

Inversion from selective homoepitaxy of Si to selective Si film deposition on SiO₂ using an ultraclean electron cyclotron resonance plasmaMATSUURA, T; OHMI, T; MUROTA, J et al.Applied physics letters. 1992, Vol 61, Num 24, pp 2908-2910, issn 0003-6951Article

H-termination effects on initial growth characteristics of W on Si using WF₆ and SiH₄ gasesYAMAMOTO, Y; MATSUURA, T; MUROTA, J et al.Journal de physique. IV. 1999, Vol 9, Num 8, pp Pr8.431-Pr8.436, issn 1155-4339, 1Conference Paper

New platinum silicide method using reaction between platinum silaneTAKAHASHI, Y; ISHII, H; MUROTA, J et al.Journal of applied physics. 1985, Vol 58, Num 8, pp 3190-3194, issn 0021-8979Article

Deposition of phosphorus doped silicon films by thermal decomposition of disilaneNAKAYAMA, S; YONEZAWA, H; MUROTA, J et al.Japanese journal of applied physics. 1984, Vol 23, Num 7, pp L493-L495, issn 0021-4922Article

Low-pressure chemical vapour deposition of silicon and germanium on silicon using contamination-minimized processingMIKOSHIBA, N; MUROTA, J; KOHLHASE, A et al.Vacuum. 1990, Vol 41, Num 4-6, pp 1087-1090, issn 0042-207X, 4 p.Conference Paper

Layer-by-layer growth of silicon nitride films by NH₃ and SiH₄WATANABE, T; SAKURABA, M; MATSUURA, T et al.Journal de physique. IV. 1999, Vol 9, Num 8, pp Pr8.333-Pr8.340, issn 1155-4339, 1Conference Paper

Atomic-layer etching of Ge using an ultraclean ECR plasmaSUGIYAMA, T; MATSUURA, T; MUROTA, J et al.Applied surface science. 1997, Vol 112, pp 187-190, issn 0169-4332Conference Paper

Optical second harmonic generation in Si_1-xGe_x film epitaxially grown on Si(100)MIZUTANI, G; SONODA, Y; USHIODA, S et al.Japanese journal of applied physics. 1995, Vol 34, Num 1B, pp L119-L121, issn 0021-4922, 2Article

Cross-sectional TEM observation of process-induced defects in heavily arsenic-diffused silicon layersHIROTA, S; MIYAKE, M; NAKAYAMA, S et al.Journal of the Electrochemical Society. 1990, Vol 137, Num 1, pp 318-322, issn 0013-4651Article

Low-temperature silicon selective deposition and epitaxy on silicon using the thermal decomposition of silane under ultraclean environmentMUROTA, J; NAKAMURA, N; KATO, M et al.Applied physics letters. 1989, Vol 54, Num 11, pp 1007-1009, issn 0003-6951, 3 p.Article

Silicon atomic layer growth using flash heating in CVDSAKURABA, M; MUROTA, J; ONO, S et al.Journal de physique. IV. 1993, Vol 3, Num 3, pp 449-456, issn 1155-4339Conference Paper

Initial growth characteristics of germanium on silicon in LPCVD using germane gas : Vapor growth and epitaxy 1996KOBAYASHI, S; SAKURABA, M; MATSUURA, T et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 686-690, issn 0022-0248Conference Paper