au.\*:("MUROTANI T")
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PREPARATION OF HIGH QUALITY N-HG0.8CD0.2TE EPITAXIAL LAYER AND ITS APPLICATION TO INFRARED DETECTOR (LAMBDA =8-14 MU M)NAGAHAMA K; OHKATA R; MUROTANI T et al.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 21; NO 12; PP. L764-L766; BIBL. 8 REF.Article
MOLECULAR BEAM EPITAXY OF CDTE AND HG1-XCDXTE ON GAAS (100)NISHITANI K; OHKATA R; MUROTANI T et al.1983; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1983; VOL. 12; NO 3; PP. 619-635; BIBL. 15 REF.Article
ELECTRON IMPACT DESORPTION OF IONS FROM GAS-COVERED SI (111) SURFACESNISHIJIMA M; FUJIWARA K; MUROTANI T et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 7; PP. 3089-3091; BIBL. 6 REF.Article
PHOTOEMISSION MEASUREMENTS OF SURFACE STATES FOR CLEAVED AND ANNEALED GE(III) SURFACES.MUROTANI T; FUJIWARA K; NISHIJIMA M et al.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 12; NO 6; PP. 2424-2426; BIBL. 10 REF.Article
Characterization of deep levels in semi-insulating GaAs crystals by a spectroscopic photoelectrochemical currentOTSUBO, M; MUROTANI, T.Japanese journal of applied physics. 1983, Vol 22, Num 6, pp 345-347, issn 0021-4922Article
INGAASP/INP MONOLITHIC PHOTODIODE ARRAYTAKAHASHI K; MUROTANI T; ISHII M et al.sdOPTICAL COMMUNICATION CONFERENCE. EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION. 5/1979/AMSTERDAM; NLD; DA. S.D.; 18.1.1-18.1.4; BIBL. 3 REF.Conference Paper
PHOTOELASTIC OPTICAL DIRECTIONAL COUPLERS IN EPITAXIAL GAAS LAYERSBENSON TM; MUROTANI T; HOUSTON PA et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 6; PP. 237-238; BIBL. 4 REF.Article
A NOVEL ELECTRO-OPTICALLY CONTROLLED DIRECTIONAL-COUPLER SWITCH IN GAAS EPITAXIAL LAYERS AT 1.15 MU MBENSON TM; MUROTANI T; ROBSON PN et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 9; PP. 1477-1483; BIBL. 22 REF.Article
A MONOLITHIC 1 X 10 ARRAY OF INGAASP/INP PHOTODIODES WITH SMALL DARK CURRENT AND UNIFORM RESPONSIVITIESTAKAHASHI K; MUROTANI T; ISHII M et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 2; PP. 239-242; BIBL. 13 REF.Article
LPE growth of Hg1-xCdxTe using conventional slider boat and effects of annealing on properties of the epilayersNAGAHAMA, K; OKHATA, R; NISHITANI, K et al.Journal of electronic materials. 1984, Vol 13, Num 1, pp 67-80, issn 0361-5235Article
Radiation annealing of Si- and S-implanted GaAsITO, K; YOSHIDA, M; OTSUBO, M et al.Japanese journal of applied physics. 1983, Vol 22, Num 5, pp L299-L300, issn 0021-4922Article
Reduction of dislocation density in GaAs/Si by strained-layer superlattice of InxGa1.9çxAs-GaAsyP1-yNISHIMURA, T; MIZUGUCHI, K; HAYAFUJI, N et al.Japanese journal of applied physics. 1987, Vol 26, Num 7, pp L1141-L1143, issn 0021-4922, 2Article
Zinc diffusion into InSbNISHITANI, K; NAGAHAMA, K; MUROTANI, T et al.Japanese journal of applied physics. 1983, Vol 22, Num 5, pp 836-841, issn 0021-4922Article
Low threshold FS-BH laser on p-InP substrate grown by all-MOCVDOHKURA, Y; KIMURA, T; NISHIMURA, T et al.Electronics Letters. 1992, Vol 28, Num 19, pp 1844-1845, issn 0013-5194Article
Crack-free and low dislocation density GaAs-on-Si grown by 2-reactor MOCVD systemNISHIMURA, T; KADOIWA, K; MIYASHITA, M et al.Journal of crystal growth. 1991, Vol 112, Num 4, pp 791-796, issn 0022-0248Article
High efficiency thin film silicon solar cells prepared by zone-melting recrystallizationISHIHARA, T; ARIMOTO, S; MORIKAWA, H et al.Applied physics letters. 1993, Vol 63, Num 26, pp 3604-3606, issn 0003-6951Article
Selective metalorganic chemical vapor deposition growth of GaAs on AlGaAs combined with in situ HCl gas etchingKIZUKI, H; HAYAFUJI, N; FUJII, N et al.Journal of crystal growth. 1993, Vol 134, Num 1-2, pp 35-42, issn 0022-0248Article
Effect of employing positions of thermal cyclic annealing and strained-layer superlattice on defect reduction in GaAs-on-SiHAYAFUJI, N; MIYASHITA, M; NISHIMURA, T et al.Japanese journal of applied physics. 1990, Vol 29, Num 11, pp 2371-2375, issn 0021-4922, 1Article
Improvement of InP crystal quality grown on GaAs substrates and device applicationsKIMURA, T; KIMURA, T; KIMURA, T; KIMURA, T; ISHIMURA, E et al.Journal of crystal growth. 1990, Vol 107, Num 1-4, pp 827-831, issn 0022-0248Conference Paper
Surface morphology improvement of GaAs-on-Si using two-reactor MOCVD system and AlAs/GaAs low temperature buffer layer : an approach to crack-free GaAs-on-SiNISHIMURA, T; KODOIWA, K; HAYAFUJI, N et al.Journal of crystal growth. 1990, Vol 107, Num 1-4, pp 468-472, issn 0022-0248Conference Paper
Large-scale metalorganic chemical vapor deposition growth of highly reliable 780 nm AlGaAs multiple quantum well high-power lasersMIHASHI, Y; MIYASHITA, M; HAYAFUJI, N et al.Journal of crystal growth. 1993, Vol 133, Num 3-4, pp 281-288, issn 0022-0248Article
Crack propagation and mechanical fracture in GaAs-on-SiHAYAFUJI, N; KIZUKI, H; MIYASHITA, M et al.Japanese journal of applied physics. 1991, Vol 30, Num 3, pp 459-463, issn 0021-4922, 5 p., 1Article
Super low noise HEMT using focused ion beam lithographyNAGAHAMA, K; NAKANISHI, M; SASAKI, Y et al.Electronics Letters. 1988, Vol 24, Num 4, pp 242-243, issn 0013-5194Article
MOCVD APGaAs/GaAs solar cells on GaAs, Ge and Ge/Si substrateKATO, M; MITSUI, K; MIZUGUCHI, K et al.IEEE photovoltaic specialists conference. 18. 1985, pp 14-19Conference Paper
A 55-ns 16-Mb DRAM with built-in self-test function using microprogram ROMTAKESHIMA, T; TAKADA, M; TASAKA, K et al.IEEE journal of solid-state circuits. 1990, Vol 25, Num 4, pp 903-911, issn 0018-9200, 9 p.Article
