ANISOTROPY OF THE PHOTOMAGNETOELECTRIC EFFECT IN MERCURY IODIDE.MANFREDOTTI C; MURRI R; VASANELLI L et al.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 21; NO 1; PP. 53-56; BIBL. 14 REF.Article

OPTICAL AND ELECTRICAL PROPERTIES OF GLOW DISCHARGE SILICON FILMSAUGELLI V; MURRI R; SCHIAVULLI L et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 90; NO 2; PP. 153-159; BIBL. 15 REF.Conference Paper

EFFECT OF HEAT-TREATMENT ON CARRIER MOBILITY IN CDSE.MANFREDOTTI C; MURRI R; VASANELLI L et al.1977; ACTA PHYS. POLON., A; POLOGNE; DA. 1977; VOL. 52; NO 1; PP. 43-49; BIBL. 22 REF.Article

PHYSICAL CHARACTERIZATION OF HALOGENATED AND HYDROGENATED AMORPHOUS SILICON FILMSAUGELLI V; MURRI R; GALASSINI S et al.1980; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 69; NO 3; PP. 315-320; BIBL. 10 REF.Article

RESISTIVITY ANISOTROPY IN P-TYPE GASEAUGELLI V; MANFREDOTTI C; MURRI R et al.1978; NUOVO CIMENTO, B; ITA; DA. 1978; VOL. 47; NO 1; PP. 101-113; ABS. ITA/RUS; BIBL. 13 REF.Article

A PARTICULAR APPLICATION OF GASE SEMICONDUCTOR DETECTORS IN THE NEUTRINO EXPERIMENT AT CERN.MANFREDOTTI C; MURRI R; QUIRINI A et al.1975; NUCL. INSTRUM. METHODS; NETHERL.; DA. 1975; VOL. 131; NO 3; PP. 457-462; BIBL. 5 REF.Article

Dark conductivity in amorphous undoped silicon filmsAUGELLI, V; MURRI, R.Journal of non-crystalline solids. 1983, Vol 57, Num 2, pp 225-240, issn 0022-3093Article

HALL-MOBILITY ANISOTROPY IN GASE.AUGELLI V; MANFREDOTTI C; MURRI R et al.1978; PHYS. REV., B; USA; DA. 1978; VOL. 17; NO 8; PP. 3221-3226; BIBL. 16 REF.Article

HALL EFFECT IN N-TYPE GAS.MANFREDOTTI C; MURRI R; RIZZO A et al.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 19; NO 4; PP. 339-342; BIBL. 20 REF.Article

OPTICAL CONSTANTS OF PBI₂ IN THE VISIBLE RANGEDE BLASI C; GALASSINI S; MANFREDOTT C et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 60; NO 2; PP. K153-K157; BIBL. 10 REF.Article

PHOTOELECTRONIC PROPERTIES OF N-GASE.MANFREDOTTI C; MURRI R; QUIRINI A et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 38; NO 2; PP. 685-693; ABS. ALLEM.; BIBL. 19 REF.Article

SPECTRAL DISTRIBUTION OF PHOTOMAGNETOELECTRIC AND PHOTOCONDUCTIVITY CURRENTS IN N-GASE SINGLE CRYSTALS: THEORY AND EXPERIMENTAUGELLI V; MANFREDOTTI C; MURRI R et al.1978; PHYS. REV., B; USA; DA. 1978; VOL. 18; NO 10; PP. 5484-5488; BIBL. 20 REF.Article

ELECTRICAL PROPERTIES OF GATE GROWN BY VARIOUS METHODS.MANFREDOTTI C; MURRI R; RIZZO A et al.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 29; NO 2; PP. 475-480; ABS. ALLEM.; BIBL. 24 REF.Article

DEEP HOLE TRAPS IN P-TYPE GASE SINGLE CRYSTALS.MANDREDOTTI C; MURRI R; RIZZO A et al.1974; PHYS. REV., B; U.S.A.; DA. 1974; VOL. 10; NO 8; PP. 3387-3393; BIBL. 32 REF.Article

CHARACTERIZATION AND LUMINESCENCE OF A-SI:H:CL FILMSFORTUNATO G; EVANGELISTI F; BRUNO G et al.1981; J. NON-CRYST. SOLIDS; ISSN 0022-3093; NLD; DA. 1981; VOL. 46; NO 1; PP. 95-104; BIBL. 17 REF.Article

OPTICAL CONSTANTS OF SILICON FILMS DEPOSITED BY THE R.F. GLOW DISCHARGE OF SICL₄AUGELLI V; MURRI R; SCHIAVULLI L et al.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 86; NO 4; PP. 359-367; BIBL. 18 REF.Article

HALL EFFECT IN GATE SINGLE CRYSTALS.AUGELLI V; MANFREDOTTI C; MURRI R et al.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 21; NO 6; PP. 575-578; BIBL. 14 REF.Article

Characterization of porous A1₂-O₃-SiO₂/Si sensor for low and medium humidity rangesSBERVEGLIERI, G; MURRI, R; PINTO, N et al.Sensors and actuators. B, Chemical. 1995, Vol 23, Num 2-3, pp 177-180, issn 0925-4005Conference Paper

Carrier lifetime from transient photoconductivity measurements on microcrystalline silicon filmsKIESS, H; AUGELLI, V; MURRI, R et al.Thin solid films. 1986, Num 141, pp 193-199, issn 0040-6090Article

Electronic-transport properties of unhydrogenated amorphous gallium arsenideMURRI, R; PINTO, N; SCHIAVULLI, L et al.Il Nuovo cimento. D. 1993, Vol 15, Num 5, pp 785-792, issn 0392-6737Article

Photoconductivity in amorphous Si: H: Cl filmsAUGELLI, V; MURRI, R; ALBA, N et al.Journal of applied physics. 1983, Vol 54, Num 1, pp 248-251, issn 0021-8979Article

Determining carrier lifetime using frequency dependence in contactless photoelectromagnetic investigations of semiconductorsLONCIERZ, B; MURRI, R; NOWAK, M et al.Thin solid films. 1995, Vol 266, Num 2, pp 274-277, issn 0040-6090Article

The density of states in the mobility gap of a-Si_1-xGe_x filmsGOZZO, F; MURRI, R; PINTO, N et al.Il Nuovo cimento. D. 1991, Vol 13, Num 3, pp 273-280, issn 0392-6737, 8 p.Article

Hall mobility in doped Si:H,Cl filmsAUGELLI, V; MURRI, R; LIGONZO, T et al.Thin solid films. 1984, Vol 116, Num 4, pp 311-315, issn 0040-6090Article

Hall mobility in undoped microcrystalline Si:H,Cl filmsAUGELLI, V; MURRI, R; LIGONZO, T et al.Applied physics letters. 1983, Vol 43, Num 3, pp 266-267, issn 0003-6951Article