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ANISOTROPY OF THE PHOTOMAGNETOELECTRIC EFFECT IN MERCURY IODIDE.MANFREDOTTI C; MURRI R; VASANELLI L et al.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 21; NO 1; PP. 53-56; BIBL. 14 REF.Article

OPTICAL AND ELECTRICAL PROPERTIES OF GLOW DISCHARGE SILICON FILMSAUGELLI V; MURRI R; SCHIAVULLI L et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 90; NO 2; PP. 153-159; BIBL. 15 REF.Conference Paper

EFFECT OF HEAT-TREATMENT ON CARRIER MOBILITY IN CDSE.MANFREDOTTI C; MURRI R; VASANELLI L et al.1977; ACTA PHYS. POLON., A; POLOGNE; DA. 1977; VOL. 52; NO 1; PP. 43-49; BIBL. 22 REF.Article

PHYSICAL CHARACTERIZATION OF HALOGENATED AND HYDROGENATED AMORPHOUS SILICON FILMSAUGELLI V; MURRI R; GALASSINI S et al.1980; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 69; NO 3; PP. 315-320; BIBL. 10 REF.Article

RESISTIVITY ANISOTROPY IN P-TYPE GASEAUGELLI V; MANFREDOTTI C; MURRI R et al.1978; NUOVO CIMENTO, B; ITA; DA. 1978; VOL. 47; NO 1; PP. 101-113; ABS. ITA/RUS; BIBL. 13 REF.Article

A PARTICULAR APPLICATION OF GASE SEMICONDUCTOR DETECTORS IN THE NEUTRINO EXPERIMENT AT CERN.MANFREDOTTI C; MURRI R; QUIRINI A et al.1975; NUCL. INSTRUM. METHODS; NETHERL.; DA. 1975; VOL. 131; NO 3; PP. 457-462; BIBL. 5 REF.Article

Dark conductivity in amorphous undoped silicon filmsAUGELLI, V; MURRI, R.Journal of non-crystalline solids. 1983, Vol 57, Num 2, pp 225-240, issn 0022-3093Article

HALL-MOBILITY ANISOTROPY IN GASE.AUGELLI V; MANFREDOTTI C; MURRI R et al.1978; PHYS. REV., B; USA; DA. 1978; VOL. 17; NO 8; PP. 3221-3226; BIBL. 16 REF.Article

HALL EFFECT IN N-TYPE GAS.MANFREDOTTI C; MURRI R; RIZZO A et al.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 19; NO 4; PP. 339-342; BIBL. 20 REF.Article

ELECTRICAL AND OPTICAL PROPERTIES OF HYDROGENATED A-SI FILMS OBTAINED BY REACTIVE PLASMA OF SICL4AUGELLI V; MURRI R; PICCOLO R et al.1980; ENERGIA SOLARE E NUOVE PROSPETTIVE. COMPLES. CONFERENZA INTERNAZIONALE. 18/1979/MILANO; ITA; COSENZA: "SVILUPPO"; DA. 1980; VOL. 1; PP. 373-382; BIBL. 14 REF.Conference Paper

CATHODOLUMINESCENCE OF GASE SINGLE CRYSTALSRAINO A; MANCINI AM; MURRI R et al.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 53; NO 2; PP. 487-492; ABS. FRE; BIBL. 27 REF.Article

ELECTRICAL PROPERTIES OF P-TYPE GASE.MANFREDOTTI C; MANCINI AM; MURRI R et al.1977; NUOVO CIMENTO, B; ITAL.; DA. 1977; VOL. 39; NO 1; PP. 257-268; ABS. ITAL.; BIBL. 27 REF.Article

FENOMENI DI PRECIPITAZIONE NELLA LEGA ZN-CD 1% = PHENOMENES DE PRECIPITATION DANS L'ALLIAGE ZN-CD 1%BARALIS G; EVANGELISTA E; GONDI P et al.1974; METALLURG. ITAL.; ITAL.; DA. 1974; VOL. 66; NO 2; PP. 86-90; ABS. FR. ANGL. ALLEM.; BIBL. 12 REF.Article

OPTICAL CONSTANTS OF PBI2 IN THE VISIBLE RANGEDE BLASI C; GALASSINI S; MANFREDOTT C et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 60; NO 2; PP. K153-K157; BIBL. 10 REF.Article

ELECTRICAL PROPERTIES OF GASXSE1-X SOLID SOLUTIONSMANFREDOTTI C; MANCINI AM; RIZZO A et al.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 48; NO 2; PP. 293-296; ABS. FRE; BIBL. 12 REF.Article

PHOTOELECTRONIC PROPERTIES OF N-GASE.MANFREDOTTI C; MURRI R; QUIRINI A et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 38; NO 2; PP. 685-693; ABS. ALLEM.; BIBL. 19 REF.Article

SPECTRAL DISTRIBUTION OF PHOTOMAGNETOELECTRIC AND PHOTOCONDUCTIVITY CURRENTS IN N-GASE SINGLE CRYSTALS: THEORY AND EXPERIMENTAUGELLI V; MANFREDOTTI C; MURRI R et al.1978; PHYS. REV., B; USA; DA. 1978; VOL. 18; NO 10; PP. 5484-5488; BIBL. 20 REF.Article

ELECTRICAL PROPERTIES OF GATE GROWN BY VARIOUS METHODS.MANFREDOTTI C; MURRI R; RIZZO A et al.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 29; NO 2; PP. 475-480; ABS. ALLEM.; BIBL. 24 REF.Article

DEEP HOLE TRAPS IN P-TYPE GASE SINGLE CRYSTALS.MANDREDOTTI C; MURRI R; RIZZO A et al.1974; PHYS. REV., B; U.S.A.; DA. 1974; VOL. 10; NO 8; PP. 3387-3393; BIBL. 32 REF.Article

CHARACTERIZATION AND LUMINESCENCE OF A-SI:H:CL FILMSFORTUNATO G; EVANGELISTI F; BRUNO G et al.1981; J. NON-CRYST. SOLIDS; ISSN 0022-3093; NLD; DA. 1981; VOL. 46; NO 1; PP. 95-104; BIBL. 17 REF.Article

OPTICAL CONSTANTS OF SILICON FILMS DEPOSITED BY THE R.F. GLOW DISCHARGE OF SICL4AUGELLI V; MURRI R; SCHIAVULLI L et al.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 86; NO 4; PP. 359-367; BIBL. 18 REF.Article

HALL EFFECT IN GATE SINGLE CRYSTALS.AUGELLI V; MANFREDOTTI C; MURRI R et al.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 21; NO 6; PP. 575-578; BIBL. 14 REF.Article

Characterization of porous A12-O3-SiO2/Si sensor for low and medium humidity rangesSBERVEGLIERI, G; MURRI, R; PINTO, N et al.Sensors and actuators. B, Chemical. 1995, Vol 23, Num 2-3, pp 177-180, issn 0925-4005Conference Paper

Carrier lifetime from transient photoconductivity measurements on microcrystalline silicon filmsKIESS, H; AUGELLI, V; MURRI, R et al.Thin solid films. 1986, Num 141, pp 193-199, issn 0040-6090Article

Photoconductivity of amorphous GaAsCOSCIA, U; MURRI, R; PINTO, N et al.Journal of non-crystalline solids. 1996, Vol 194, Num 1-2, pp 103-108, issn 0022-3093Article

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