au.\*:("MURTO, R. W")
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Charges in HFO2 ALD gate dielectricsBERSUKER, G; ZEITZOFF, P. M; HUFF, H. R et al.Proceedings - Electrochemical Society. 2003, pp 417-422, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper
RPN oxynitride gate dielectrics for 90 nm Low Power CMOS applicationsVELOSO, A; JURCZAK, M; BADENES, G et al.ESSCIRC 2002 : European solid-state circuits conferenceEuropean solid-state device research conference. 2002, pp 159-162, isbn 88-900847-8-2, 4 p.Conference Paper
High-k gate stacks for planar, scaled CMOS integrated circuitsHUFF, H. R; HOU, A; LYSAGHT, P et al.Microelectronic engineering. 2003, Vol 69, Num 2-4, pp 152-167, issn 0167-9317, 16 p.Conference Paper
Effect of pre-existing defects on reliability assessment of high-K gate dielectricsBERSUKER, G; SIM, J. H; YOUNG, C. D et al.Microelectronics and reliability. 2004, Vol 44, Num 9-11, pp 1509-1512, issn 0026-2714, 4 p.Conference Paper
Experimental observations of the thermal stability of high-k gate dielectric materials on siliconLYSAGHT, P. S; CHEN, P. J; BERGMANN, R et al.Journal of non-crystalline solids. 2002, Vol 303, Num 1, pp 54-63, issn 0022-3093Conference Paper
Gate dielectrics for high performance and low power CMOS SoC applicationsCUBAYNES, F. N; DACHS, C. J. J; ROTHSCHILD, A et al.ESSCIRC 2002 : European solid-state circuits conferenceEuropean solid-state device research conference. 2002, pp 427-430, isbn 88-900847-8-2, 4 p.Conference Paper
Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE)LEE, B. H; YOUNG, C. D; MOUMEN, N et al.International Electron Devices Meeting. 2004, pp 859-862, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper
Integration issues of high-k gate stack : Process-induced chargingBERSUKER, G; GUTT, J; PETERSON, J et al.IEEE international reliability physics symposium. 2004, pp 479-484, isbn 0-7803-8315-X, 1Vol, 6 p.Conference Paper