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Microelectronics technology and devices SBMICRO 2003 (Sao Paulo, 8-11 September 2003)Martino, J.A; Pavanello, M.A; Morimoto, N.I et al.Proceedings - Electrochemical Society. 2003, issn 0161-6374, isbn 1-56677-389-X, X, 462 p, isbn 1-56677-389-XConference Proceedings

Silicon carbide clusters in silicon formed by carbon ions implantationFORHAN, N. A. E; PEREYRA, I.Proceedings - Electrochemical Society. 2003, pp 275-283, issn 0161-6374, isbn 1-56677-389-X, 9 p.Conference Paper

State diagram simulations of SET circuits using SPICEVAN DE HAAR, Rudie; HOEKSTRA, Jaap.Proceedings - Electrochemical Society. 2003, pp 205-214, issn 0161-6374, isbn 1-56677-389-X, 10 p.Conference Paper

Performance analysis of single-electron winner-take-all network circuitsGUIMARAES, Janaina; CAMARGO DA COSTA, José.Proceedings - Electrochemical Society. 2003, pp 120-129, issn 0161-6374, isbn 1-56677-389-X, 10 p.Conference Paper

Analysis of the capacitance vs. voltage in graded channel SOI capacitorSONNENBERG, Victor; MARTINO, Joao Antonio.Proceedings - Electrochemical Society. 2003, pp 38-47, issn 0161-6374, isbn 1-56677-389-X, 10 p.Conference Paper

Multiple-gate silicon-on-insulator MOS transistorsCOLINGE, Jean-Pierre.Proceedings - Electrochemical Society. 2003, pp 2-17, issn 0161-6374, isbn 1-56677-389-X, 16 p.Conference Paper

Comparison between the leakage drain current behavior in SOI pMOSFETs and SOI nMOSFETs operating at 300°CBELLODI, Marcello; MARTINO, Joao Antonio.Proceedings - Electrochemical Society. 2003, pp 87-94, issn 0161-6374, isbn 1-56677-389-X, 8 p.Conference Paper

Low temperature electronics: From fundamental physics to emerging silicon technologiesCLAEYS, C; SIMOEN, E.Proceedings - Electrochemical Society. 2003, pp 96-111, issn 0161-6374, isbn 1-56677-389-X, 16 p.Conference Paper

An improved current model for edgeless SOI MOSFETsGIACOMINI, Renato; MARTINO, Joao Antonio.Proceedings - Electrochemical Society. 2003, pp 68-76, issn 0161-6374, isbn 1-56677-389-X, 9 p.Conference Paper

High quality emitter silicon solar cellsSTEM, N; CID, M.Proceedings - Electrochemical Society. 2003, pp 180-185, issn 0161-6374, isbn 1-56677-389-X, 6 p.Conference Paper

The leakage drain current behavior in graded-channel SOI nMOSFETs operating up to 300°CBELLODI, M; MARTINO, J. A.Proceedings - Electrochemical Society. 2003, pp 28-37, issn 0161-6374, isbn 1-56677-389-X, 10 p.Conference Paper

Numerical analysis of the quantum stub transistorGUERRA, Alexandre B; SANTOS, Edval J. P.Proceedings - Electrochemical Society. 2003, pp 197-204, issn 0161-6374, isbn 1-56677-389-X, 8 p.Conference Paper

A layout compactor using a virtual grid representation and independent hardware platformMOURA, L. G; ANIDO, M. L; OLIVEIRA, C. E. T et al.Proceedings - Electrochemical Society. 2003, pp 222-232, issn 0161-6374, isbn 1-56677-389-X, 11 p.Conference Paper

Comb-shape microresonators modeling for microelectromechanical filter synthesisVASSOLER, Jakson M; FONSECA, Jun S. O; ITURRIOZ, Ignacio et al.Proceedings - Electrochemical Society. 2003, pp 233-240, issn 0161-6374, isbn 1-56677-389-X, 8 p.Conference Paper

In-situ and ion implantation nitrogen doping on near stoichiometric a-SiC:H filmsOLIVEIRA, A. R; CARRENO, M. N. P.Proceedings - Electrochemical Society. 2003, pp 267-274, issn 0161-6374, isbn 1-56677-389-X, 8 p.Conference Paper

A study on the self-heating effect in deep-submicrometer partially depleted SOI MOSFETs at low temperaturesPAVANELLO, M. A; MARTINO, J. A; SIMOEN, E et al.Proceedings - Electrochemical Society. 2003, pp 112-119, issn 0161-6374, isbn 1-56677-389-X, 8 p.Conference Paper

Characterization of electrospinning process using blends of polyacrylonitrile and carbon particlesDA SILVA, A. N. R; FURLAN, R; RAMOS, I et al.Proceedings - Electrochemical Society. 2003, pp 284-291, issn 0161-6374, isbn 1-56677-389-X, 8 p.Conference Paper

A comparative study of aluminum and tungsten silicon Schottky diodesDE SOUZA, Pablo R; SWART, Jacobus W; DINIZ, José A et al.Proceedings - Electrochemical Society. 2003, pp 166-172, issn 0161-6374, isbn 1-56677-389-X, 7 p.Conference Paper

Gold microwires applied to cardiac potential detectionFONTES, Marcelo Bariatto A; CESTARI, Idagene A.Proceedings - Electrochemical Society. 2003, pp 415-419, issn 0161-6374, isbn 1-56677-389-X, 5 p.Conference Paper

Fabrication of submicron structures in polycristalline silicon by reactive ion etching using fluorine- and chlorine- containing plasmasREYES-BETANZO, C; MOSHKALYOV, S. A; SEABRA, A. C et al.Proceedings - Electrochemical Society. 2003, pp 357-362, issn 0161-6374, isbn 1-56677-389-X, 6 p.Conference Paper

Self-sustained bridges of a-SiC:H obtained by PECVD techniqueCARRENO, M. N. P; LOPES, A. T.Proceedings - Electrochemical Society. 2003, pp 324-331, issn 0161-6374, isbn 1-56677-389-X, 8 p.Conference Paper

Synthesis of carbon nanotubes by plasma-enhanced chemical vapor depositionMOSHKALYOV, S. A; RAMOS, A. C. S; REYES-BETANZO, C et al.Proceedings - Electrochemical Society. 2003, pp 311-315, issn 0161-6374, isbn 1-56677-389-X, 5 p.Conference Paper

Comparison between conventional and graded-channel SOI nMOSFETs in low temperature operationDER AGOPIAN, Paula Ghedini; PAVANELLO, Marcelo Antonio; MARTINO, Joao Antonio et al.Proceedings - Electrochemical Society. 2003, pp 77-86, issn 0161-6374, isbn 1-56677-389-X, 10 p.Conference Paper

Six sigma method applied for reflow soldering process in SMT (Surface Mount Technology)BUENO, Ana Carolina; SHIKI, Maira Paulilo; DE LIMA, Valdemir Ronaldo et al.Proceedings - Electrochemical Society. 2003, pp 316-323, issn 0161-6374, isbn 1-56677-389-X, 8 p.Conference Paper

Study of series resistance and effective channel length behavior comparing graded-channel and conventional SOI nMOSFETsFALCE DE ALMEIDA, Galba; SIRLEY NICOLETT, Aparecido; MARTINO, Joao Antonio et al.Proceedings - Electrochemical Society. 2003, pp 58-67, issn 0161-6374, isbn 1-56677-389-X, 10 p.Conference Paper

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