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THRESHOLD SWITCHING OF VIOLANTHRONE IN A SANDWICH-TYPE CELL.SADAOKA Y; SAKAI Y.1976; BULL. CHEM. SOC. JAP.; JAP.; DA. 1976; VOL. 49; NO 1; PP. 325-326; BIBL. 7 REF.Article

THE SWITCHING BEHAVIOR OF CHALOOGENIDE GLASS WITH SEMICONDUCTING ELECTRODESSTIEGLER H; HABERLAND DR.sdJ. NON-CRYST. SOLIDS; NETHERL.; DA. (197; VOL. 11; NO 2; PP. 147-152; BIBL. 10 REF.Serial Issue

ON STATE OF AMORPHOUS THRESHOLD SWITCHES.PETERSEN KE; ADLER D.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 1; PP. 256-263; BIBL. 44 REF.Article

RECTIFICATION PHENOMENA AND PHOTOVOLTAIC EFFECTS IN AN AMORPHOUS SE1-X1TEX1-SE1-X2TEX2 HETEROSTRUCTUREKIKUCHI T; EMA Y; HAYASHI T et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 7; PP. 5043-5044; BIBL. 4 REF.Article

ELECTROFORMING AND CONDUCTION IN THIN AMORPHOUS SULPHIDE FILMSSUTHERLAND RR; WILLIAMSON JPA; COLLINS RA et al.1972; J. PHYS. D; G.B.; DA. 1972; VOL. 5; NO 9; PP. 1686-1691; BIBL. 11 REF.Serial Issue

Optical properties of disordered carbon-based materialsFANCHINI, G; RAY, S. C; TAGLIAFERRO, A et al.Surface & coatings technology. 2002, Vol 151-52, pp 233-241, issn 0257-8972Conference Paper

ETUDE DU DEVELOPPEMENT DU PROCESSUS DE COMMUTATION PENDANT LE TEMPS DE LATENCEKOSTYLEV SA; MAKHINYA LN.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 12; PP. 2296-2299; BIBL. 4 REF.Article

TRANSITION FROM TRANSIENT TO STEADY-STATE DARK CURRENTS IN AMORPHOUS AS2SE3.ABKOWITZ M; SCHER H.1977; PHILOS. MAG.; G.B.; DA. 1977; VOL. 35; NO 6; PP. 1585-1608; BIBL. 33 REF.Article

MODEL FOR THE BLEACHING OF WO3 ELECTROCHROMIC FILMS BY AN ELECTRIC FIELD.FAUGHNAN BW; CRANDALL RS; LAMPERT MA et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 5; PP. 275-277; BIBL. 11 REF.Article

SILICIDE FORMATION IN PD-A-SI:H SCHOTTKY BARRIERSTHOMPSON MJ; JOHNSON NM; NEMANICH RJ et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 3; PP. 274-276; BIBL. 21 REF.Article

BEHAVIOR OF AMORPHOUS SEMICONDUCTOR FILMS BETWEEN ASYMETRIC ELECTRODESVENDURA GJ JR; HENISCH HK.1972; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1972; VOL. 11; NO 2; PP. 105-112; BIBL. 14 REF.Serial Issue

Structure formation processes and thermomagnetic recording in two-dimensional magnetic systemsBELOSHAPKIN, V. V; BERMAN, G. P; SEREDKIN, V. A et al.Soviet physics. Solid state. 1991, Vol 33, Num 9, pp 1442-1446, issn 0038-5654Article

A new approach for the description of the initial-stage kinetics during amorphous materials sinteringRISTIC, M. M; DRAGOJEVIC-NESIC, M. J.Powder technology. 1987, Vol 49, Num 2, pp 189-190, issn 0032-5910Article

ELECTRON TUNNELING INTO AMORPHOUS GERMANIUM.OSMUN JW.1975; PHYS. REV.; U.S.A.; DA. 1975; VOL. 11; NO 12; PP. 5008-5022; BIBL. 36 REF.Article

Measurement of power loss in stacked cores built with amorphous materialsDJEGHABA, D. C; BASAK, A.Physica scripta (Print). 1989, Vol 39, Num 4, pp 504-507, issn 0031-8949, 4 p.Article

Adhesion measurements of non-crystalline diamond films prepared by a laser plasma discharge sourceDAVANLOO, F; LEE, T. J; PARK, H et al.Journal of adhesion science and technology. 1993, Vol 7, Num 12, pp 1323-1334, issn 0169-4243Article

Proceedings of the 12th International Conference on the Structure of Non-Crystalline Materials (NCM 12), Riva del Garda - Trento, Italy, July 7-12, 2013DALBA, Giuseppe; ROCCA, Francesco.Journal of non-crystalline solids. 2014, Vol 401, issn 0022-3093, 266 p.Conference Proceedings

An explanation of anomalous diffusion patterns observed in electroactive materials by impedance methodsBISQUERT, Juan; GARCIA-BELMONTE, Germa; PITARCH, Angeles et al.ChemPhysChem (Print). 2003, Vol 4, Num 3, pp 287-292, issn 1439-4235, 6 p.Article

Raman scattering diagnostics of the structure of hydrogenated amorphous diamond-like carbon filmsVALAKH, M. Ya; VASYLYK, O. V; GONTAR, A. G et al.SPIE proceedings series. 1998, pp 363-368, isbn 0-8194-2808-6Conference Paper

THRESHOLD VOLTAGE CONTROL METHOD FOR AMORPHOUS SWITCHES.HOLLAND PA; HUGHES AJ.1977; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1977; VOL. 23; NO 3; PP. 305-314; BIBL. 5 REF.Article

MECANISME DU PHENOMENE DE MEMOIRE DANS LES MATERIAUX AMORPHES EVAPORESFUKUZAWA M; SAKAMOTO N.1977; OYO BUTURI; JAP.; DA. 1977; VOL. 46; NO 7; PP. 690-694; ABS. ANGL.; BIBL. 15 REF.Article

LIEN ENTRE LES COMMUTATEURS SUR UNE COUCHE COMMUNE DE VERRE CHALCOGENUREGURIN NT; ZOLOTAREV VF; SEMAK DG et al.1976; MIKROELEKTRONIKA; S.S.S.R.; DA. 1976; VOL. 5; NO 1; PP. 81-83; BIBL. 14 REF.Article

MECANISME DE DEGRADATION DES COMMUTATEURS A BASE DE VERRES CHALCOGENES. II. ETAT DE FORTE CONDUCTANCEGAMAN VI; BADLUEV AI.1975; IZVEST. VYSSH. UCHEBN. ZAVED., FIZ.; S.S.S.R.; DA. 1975; VOL. 18; NO 3; PP. 56-60; BIBL. 4 REF.Article

INSTRINSIC INSTABILITY AND CURRENT CHANNELLING IN THERMALLY CONTROLLED, TWO-TERMINAL SWITCHING DEVICES.MALE JC; THOMAS DL.1974; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1974; VOL. 13; NO 3; PP. 409-422; BIBL. 23 REF.Article

ONE-CARRIER INJECTION IN AMORPHOUS SEMICONDUCTORS.LABIB AM; CHKHARTISHVILY YV.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 23; NO 1; PP. 291-295; ABS. RUSSE; BIBL. 10 REF.Article

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