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Results 1 to 25 of 22426

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Coordination polymers of the 3d block cations with semiconductor propertiesROSCA, I; RUSU, I; SUTIMAN, D et al.International symposium on electrets. 1999, pp 557-560, isbn 0-7803-5025-1Conference Paper

Use of Raman scattering of waves for the optical diagnostics of semiconductor materials for microelectronicsSEMCHUK, O. Yu; GRECHKO, L. G; OGENKO, V. M et al.SPIE proceedings series. 1998, pp 383-388, isbn 0-8194-2808-6Conference Paper

The mechanics of dislocations in strained-layer semiconductor materialsFREUND, L. B.Advances in applied mechanics. 1994, Vol 30, pp 1-66, issn 0065-2156Article

Size dependence of photoluminescence in semiconductor nanocrystallitesRANJAN, V; SINGH, V. A.SPIE proceedings series. 1998, pp 98-101, isbn 0-8194-2756-X, 2VolConference Paper

Topics in high field transport in semiconductorsBRENNAN, Kevin F; RUDEN, P. Paul.International journal of high speed electronics and systems. 2001, Vol 11, Num 2, 257 p.Serial Issue

Investigations on the morphology of silicon surfaces anisotropically etched with TMAHTHONG, J. T. L; BAI, Y; LUO, P et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 72, Num 2-3, pp 177-179, issn 0921-5107Conference Paper

SEMAT'99 : structure électronique et matériaux (Mont Sainte Odile, 12-13 octobre 1999)SEMAT'99. Réunion annuelle. 1999, 54 p.Conference Proceedings

Acoustoelectric effect in a semiconductor superlatticeMENSAH, S. Y; ALLOTEY, F. K. A; ADJEPONG, S. K et al.Journal of physics. Condensed matter (Print). 1994, Vol 6, Num 34, pp 6783-6787, issn 0953-8984Article

Transient strongly anisotropic luminescence from an optically excited semiconductorIVANOV, A. L; HAUG, H.Physica status solidi. B. Basic research. 1992, Vol 173, Num 1, pp 211-220, issn 0370-1972Conference Paper

A theoretical search for possible high efficiency semiconductor based field assisted positron moderatorsBELING, C. D; FUNG, S; LI MING et al.Applied surface science. 1999, Vol 149, Num 1-4, pp 253-259, issn 0169-4332Conference Paper

Thermo-acoustical parameters of some semiconductorsREDDY, R. R; RAVI KUMAR, M; RAO, T. V. R et al.Crystal research and technology (1979). 1993, Vol 28, Num 5, pp 729-735, issn 0232-1300Article

Double plasmon-pole for highly excited quantum-well wiresCAO, H. T; TRAN THOAI, D. B.Solid state communications. 2000, Vol 114, Num 2, pp 97-100, issn 0038-1098Article

About the mechanisms of spin-dependent recombination in semiconductorsBARABANOV, A. V; LVOV, V. A; TRETYAK, O. V et al.Physica status solidi. B. Basic research. 1998, Vol 207, Num 2, pp 419-427, issn 0370-1972Article

Defects in Ge+-implanted Si studied by slow positron implantation spectroscopyKUNA, S. A. E; COLEMAN, P. G; NEJIM, A et al.Semiconductor science and technology. 1998, Vol 13, Num 4, pp 394-398, issn 0268-1242Article

Controlling artificial atomsJULIEN, F. H; ALEXANDROU, A.Science (Washington, D.C.). 1998, Vol 282, Num 5393, pp 1429-1430, issn 0036-8075Article

Wavelet characterization of the submicron surface roughness of anisotropically etched siliconMOKTADIR, Z; SATO, K.Surface science. 2001, Vol 470, Num 1-2, pp L57-L62, issn 0039-6028Article

Electronic and optical properties of semiconductor nanostructuresSINGH, V. A; RANJAN, V.SPIE proceedings series. 1998, pp 69-76, isbn 0-8194-2756-X, 2VolConference Paper

Summary of a focused session on nanocrystalline SiROBERTSON, J; TANAKA, K.Journal of non-crystalline solids. 1996, Vol 198200, pp 837-839, issn 0022-3093, 2Conference Paper

Extension of the rees basis function technique to stimulate nonstationary transportKHAN, S. A; GUTMANN, R. J.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 6, pp 998-1006, issn 0018-9383Article

Spatial modulation of a nonquadratic dispersion law of carriers in semiconductors by an external hf fieldBASS, F. G; EVTUSHENKO, O. M; PANCHEKHA, A. P et al.Semiconductors (Woodbury, N.Y.). 1993, Vol 27, Num 10, pp 964-965, issn 1063-7826Article

The role of experimental error in arrhenius plots : Self-diffusion in semiconductorsDUNSTAN, D. J.Solid state communications. 1998, Vol 107, Num 4, pp 159-163, issn 0038-1098Article

Electrical and dielectric studies of a-GaxSe100-xalloysILYAS, M; ZULFEQAUR, M; HUSAIN, M et al.SPIE proceedings series. 1998, pp 1207-1210, isbn 0-8194-2756-X, 2VolConference Paper

Electrical and optical study of mixed BixSb2-xTe3 crystalsDESAI, C. F; DHAR, S.SPIE proceedings series. 1998, pp 1169-1173, isbn 0-8194-2756-X, 2VolConference Paper

The mechanism of the ZnGa2S4 monolayer formation on NaCl surfacePOPOVICH, N; ZHIKHAREV, V; DOVGOSHEY, N et al.SPIE proceedings series. 1998, pp 90-94, isbn 0-8194-2808-6Conference Paper

Lattice energy and electronic polarizability of binary tetrahedral semiconductorsKUMAR, V; PRASAD, G. M; CHANDRA, D et al.The Journal of physics and chemistry of solids. 1997, Vol 58, Num 3, pp 463-465, issn 0022-3697Article

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