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Results 1 to 25 of 5777

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A new approach for the description of the initial-stage kinetics during amorphous materials sinteringRISTIC, M. M; DRAGOJEVIC-NESIC, M. J.Powder technology. 1987, Vol 49, Num 2, pp 189-190, issn 0032-5910Article

Measurement of power loss in stacked cores built with amorphous materialsDJEGHABA, D. C; BASAK, A.Physica scripta (Print). 1989, Vol 39, Num 4, pp 504-507, issn 0031-8949, 4 p.Article

Adhesion measurements of non-crystalline diamond films prepared by a laser plasma discharge sourceDAVANLOO, F; LEE, T. J; PARK, H et al.Journal of adhesion science and technology. 1993, Vol 7, Num 12, pp 1323-1334, issn 0169-4243Article

Proceedings of the 12th International Conference on the Structure of Non-Crystalline Materials (NCM 12), Riva del Garda - Trento, Italy, July 7-12, 2013DALBA, Giuseppe; ROCCA, Francesco.Journal of non-crystalline solids. 2014, Vol 401, issn 0022-3093, 266 p.Conference Proceedings

An explanation of anomalous diffusion patterns observed in electroactive materials by impedance methodsBISQUERT, Juan; GARCIA-BELMONTE, Germa; PITARCH, Angeles et al.ChemPhysChem (Print). 2003, Vol 4, Num 3, pp 287-292, issn 1439-4235, 6 p.Article

Raman scattering diagnostics of the structure of hydrogenated amorphous diamond-like carbon filmsVALAKH, M. Ya; VASYLYK, O. V; GONTAR, A. G et al.SPIE proceedings series. 1998, pp 363-368, isbn 0-8194-2808-6Conference Paper

Electronic transport in Ru-Si-O and Ir-Si-O amorphous thin filmsGOTTLIEB, U; LABORDE, O; GIAUQUE, P. H et al.Microelectronic engineering. 2002, Vol 60, Num 1-2, pp 107-111, issn 0167-9317Conference Paper

Amorphous silicon alloy materials, cells, and modulesGUHA, S; YANG, J.sans titre. 2002, pp 1070-1075, isbn 0-7803-7471-1, 6 p.Conference Paper

Study of photoluminescence in porous silicon prepared by electrochemical etching of amorphous siliconBHATTACHARYA, E; CHANDRAKANTH, R.SPIE proceedings series. 1998, pp 603-606, isbn 0-8194-2756-X, 2VolConference Paper

Scientific instrumentation for hot microhardness measurements on amorphous solidsYANNACOPOULOS, S; KASAP, S. O.Review of scientific instruments. 1989, Vol 60, Num 7, pp 1321-1327, issn 0034-6748, 1Article

Reduction of irreversible capacities of amorphous carbon materials for lithium ion battery anodes by Li2CO3 additionMUKAI, Shin R; HASEGAWA, Takahiro; TAKAGI, Michiya et al.Carbon (New York, NY). 2004, Vol 42, Num 4, pp 837-842, issn 0008-6223, 6 p.Article

Electron diffraction structure analysis for amorphous materialsHIROTSU, Y; OHKUBO, T; BAE, I.-T et al.Materials chemistry and physics. 2003, Vol 81, Num 2-3, pp 360-363, issn 0254-0584, 4 p.Conference Paper

Magneto-inductive effect in tension-annealed amorphous wires and MI sensorsKAWASHIMA, K; KOHZAWA, T; YOSHIDA, H et al.IEEE transactions on magnetics. 1993, Vol 29, Num 6, pp 3168-3170, issn 0018-9464, 1Conference Paper

Structural study of binary phosphate glasses by x-ray and neutron diffractionWASEDA, Y; MATSUBARA, E; SUGIYAMA, K et al.Science Reports of the Research Institutes, Tohoku University. Series A, Physics, Chemistry and Metallurgy. 1990, Vol 35, Num 1, pp 19-33, issn 0040-8808Article

Nanostructure of a-C:N films characterised by Raman spectroscopyVASIN, A. V; VASYLYK, O. V; MATVEEVA, L. A et al.SPIE proceedings series. 1998, pp 359-362, isbn 0-8194-2808-6Conference Paper

Organic light-emitting diodes using novel charge-transport materialsSHIROTA, Y.SPIE proceedings series. 1997, pp 186-193, isbn 0-8194-2570-2Conference Paper

Electrical properties of light-addressed sub-μm electrodes fabricated by use of nanostencil-technologyBUCHER, Volker; BRUGGER, Jürgen; KERN, Dieter et al.Microelectronic engineering. 2002, Vol 61-62, pp 971-980, issn 0167-9317Conference Paper

Thermal studies of a-Ga20Se80-xTex semiconducting alloysZULFEQAUR, M; KHAN, Z. H; HUSAIN, M et al.SPIE proceedings series. 1998, pp 1291-1294, isbn 0-8194-2756-X, 2VolConference Paper

Accumulation d'une charge anodique photo-induite dans les couches amorphesPOZNYAK, S. K; KULAK, A. I.Èlektrohimiâ. 1989, Vol 25, Num 1, pp 129-131, issn 0424-8570Article

Structural modifications induced in hydrogenated amorphous Si/Ge multilayers by heat treatmentsFRIGERI, C; SERENYI, M; CSIK, A et al.Journal of materials science. Materials in electronics. 2008, Vol 19, issn 0957-4522, S289-S293, SUP1Conference Paper

Highly Reliable Amorphous Silicon Gate Driver Using Stable Center-Offset Thin-Film TransistorsJAE WON CHOI; JAE IK KIM; SE HWAN KIM et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 9, pp 2330-2334, issn 0018-9383, 5 p.Article

One mask step a-Si:H/a-SiOxNy thin film transistorALBERTIN, K. F; PEREYRA, I.Proceedings - Electrochemical Society. 2004, pp 75-80, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Controlled motion in microbridges of silicon carbide obtained by PECVDREHDER, G; CARRENO, M. N. P.Proceedings - Electrochemical Society. 2004, pp 125-130, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

The transient photo-dark current ratio of a-Si: H p-i-n photodiodeGRADISNIK, V; PAVLOVIC, Mladen; PIVAC, Branko et al.Mediterranean electrotechnical conference. 2004, isbn 0-7803-8271-4, 3Vol, Vol.1, 27-29Conference Paper

Modified Threshold Voltage Shift Model in a-Si:H TFTs Under Prolonged Gate Pulse StressLIU, Shou-En; KUNG, Chen-Pang.IEEE electron device letters. 2008, Vol 29, Num 7, pp 734-736, issn 0741-3106, 3 p.Article

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