A new approach for the description of the initial-stage kinetics during amorphous materials sinteringRISTIC, M. M; DRAGOJEVIC-NESIC, M. J.Powder technology. 1987, Vol 49, Num 2, pp 189-190, issn 0032-5910Article

Adhesion measurements of non-crystalline diamond films prepared by a laser plasma discharge sourceDAVANLOO, F; LEE, T. J; PARK, H et al.Journal of adhesion science and technology. 1993, Vol 7, Num 12, pp 1323-1334, issn 0169-4243Article

Proceedings of the 12th International Conference on the Structure of Non-Crystalline Materials (NCM 12), Riva del Garda - Trento, Italy, July 7-12, 2013DALBA, Giuseppe; ROCCA, Francesco.Journal of non-crystalline solids. 2014, Vol 401, issn 0022-3093, 266 p.Conference Proceedings

An explanation of anomalous diffusion patterns observed in electroactive materials by impedance methodsBISQUERT, Juan; GARCIA-BELMONTE, Germa; PITARCH, Angeles et al.ChemPhysChem (Print). 2003, Vol 4, Num 3, pp 287-292, issn 1439-4235, 6 p.Article

Raman scattering diagnostics of the structure of hydrogenated amorphous diamond-like carbon filmsVALAKH, M. Ya; VASYLYK, O. V; GONTAR, A. G et al.SPIE proceedings series. 1998, pp 363-368, isbn 0-8194-2808-6Conference Paper

Electronic transport in Ru-Si-O and Ir-Si-O amorphous thin filmsGOTTLIEB, U; LABORDE, O; GIAUQUE, P. H et al.Microelectronic engineering. 2002, Vol 60, Num 1-2, pp 107-111, issn 0167-9317Conference Paper

Nanostructure of a-C:N films characterised by Raman spectroscopyVASIN, A. V; VASYLYK, O. V; MATVEEVA, L. A et al.SPIE proceedings series. 1998, pp 359-362, isbn 0-8194-2808-6Conference Paper

Organic light-emitting diodes using novel charge-transport materialsSHIROTA, Y.SPIE proceedings series. 1997, pp 186-193, isbn 0-8194-2570-2Conference Paper

Electrical properties of light-addressed sub-μm electrodes fabricated by use of nanostencil-technologyBUCHER, Volker; BRUGGER, Jürgen; KERN, Dieter et al.Microelectronic engineering. 2002, Vol 61-62, pp 971-980, issn 0167-9317Conference Paper

Thermal studies of a-Ga₂₀Se_80-xTe_x semiconducting alloysZULFEQAUR, M; KHAN, Z. H; HUSAIN, M et al.SPIE proceedings series. 1998, pp 1291-1294, isbn 0-8194-2756-X, 2VolConference Paper

Accumulation d'une charge anodique photo-induite dans les couches amorphesPOZNYAK, S. K; KULAK, A. I.Èlektrohimiâ. 1989, Vol 25, Num 1, pp 129-131, issn 0424-8570Article

Structural modifications induced in hydrogenated amorphous Si/Ge multilayers by heat treatmentsFRIGERI, C; SERENYI, M; CSIK, A et al.Journal of materials science. Materials in electronics. 2008, Vol 19, issn 0957-4522, S289-S293, SUP1Conference Paper

Highly Reliable Amorphous Silicon Gate Driver Using Stable Center-Offset Thin-Film TransistorsJAE WON CHOI; JAE IK KIM; SE HWAN KIM et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 9, pp 2330-2334, issn 0018-9383, 5 p.Article

One mask step a-Si:H/a-SiO_xN_y thin film transistorALBERTIN, K. F; PEREYRA, I.Proceedings - Electrochemical Society. 2004, pp 75-80, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Controlled motion in microbridges of silicon carbide obtained by PECVDREHDER, G; CARRENO, M. N. P.Proceedings - Electrochemical Society. 2004, pp 125-130, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

The transient photo-dark current ratio of a-Si: H p-i-n photodiodeGRADISNIK, V; PAVLOVIC, Mladen; PIVAC, Branko et al.Mediterranean electrotechnical conference. 2004, isbn 0-7803-8271-4, 3Vol, Vol.1, 27-29Conference Paper

The novel usage of spectroscopic ellipsometry for the development of amorphous Si solar cellsLEE, Seung-Yoon; SHIM, Jenny H; DONG JOO YOU et al.Solar energy materials and solar cells. 2011, Vol 95, Num 1, pp 142-145, issn 0927-0248, 4 p.Conference Paper

Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistorsWANG, M. C; TSAO, S. W; CHANG, T. C et al.Solid-state electronics. 2010, Vol 54, Num 11, pp 1485-1487, issn 0038-1101, 3 p.Article

Three hydrogenated amorphous silicon photodiodes stacked for an above integrated circuit colour sensorGIDON, Pierre; GIFFARD, Benoit; MOUSSY, Norbert et al.Physica status solidi. A, Applications and materials science (Print). 2010, Vol 207, Num 3, pp 704-707, issn 1862-6300, 4 p.Conference Paper

Determination of density of states in amorphous carbonPAUL, S.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 8, pp 1775-1781, issn 0018-9383, 7 p.Article

PECVD films for low-temperature poly-Si TFT-LCD applicationsTAKEHARA, T; HARSHBARGER, W. R; TSAI, C. C et al.Journal of the Society for Information Display. 2001, Vol 9, Num 1, pp 57-60, issn 1071-0922Article

Instabilities in micromechanical deformationLI, J. C. M.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2000, Vol 285, Num 1-2, pp 207-212, issn 0921-5093Conference Paper

PVSEC 18BANDYOPADHYAY, Bibek; CHOPRA, Kasturi L.Solar energy materials and solar cells. 2010, Vol 94, Num 9, issn 0927-0248, 125 p.Conference Proceedings

Study of the microstructure transition width from amorphous to microcrystalline silicon as a function of the input silane concentrationSTRAHM, B; FELTRIN, A; BUGNON, G et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7409, issn 0277-786X, isbn 978-0-8194-7699-9 0-8194-7699-4, 1Vol, 74090I.1-74090I.6Conference Paper

Suppressing ability of germanium preamorphisation thicknesses combined with sub-keV boron implantation for drive current improvementWU, M.-C; CHEN, L.-C.Electronics Letters. 2008, Vol 44, Num 18, pp 1093-1094, issn 0013-5194, 2 p.Article