A multi-color CdS/ZnSe quantum well photodetector for mid- and long-wavelength infrared detectionSFINA, N; ZEIRI, N; NASRALLAH, S. Abdi-Ben et al.Materials science in semiconductor processing. 2014, Vol 19, pp 83-88, issn 1369-8001, 6 p.Article

AC conductivity of nanoparticles Co_xFe_(1-x)Fe₂O₄ (x=0, 0.25 and 1) ferritesABU-SAMAHA, F. S. H; ISMAIL, M. I. M.Materials science in semiconductor processing. 2014, Vol 19, pp 50-56, issn 1369-8001, 7 p.Article

Characterization of density-of-states in indium zinc oxide thin-film transistor from temperature stress studiesXINGWEI DING; JIANHU ZHANG; WEIMIN SHI et al.Materials science in semiconductor processing. 2014, Vol 27, pp 154-158, issn 1369-8001, 5 p.Article

Characterization of n-Ge/i-Ge/p-Si PIN photo-diodeHYEON DEOK YANG; KIL, Yeon-Ho; YANG, Jong-Han et al.Materials science in semiconductor processing. 2014, Vol 22, pp 37-43, issn 1369-8001, 7 p.Article

Comparative study of the carbon nanofilm and nanodots grown by plasma-enhanced hot filament chemical vapor depositionWANG, B. B; CHEN, C. C; ZHENG, K et al.Materials science in semiconductor processing. 2014, Vol 21, pp 146-153, issn 1369-8001, 8 p.Article

Composition effect on the structure and optical parameters of Ge-Se-Te thin filmsMOHAMED, M; ABDEL-RAHIM, M. A.Materials science in semiconductor processing. 2014, Vol 27, pp 288-292, issn 1369-8001, 5 p.Article

Current―voltage and photovoltaic characteristics of n-Ge₁₀Se₈₀In₁₀/p-Si heterojunctionEL-NAHASS, M. M; EL-ZAIDIA, E. F. M; ALI, M. H et al.Materials science in semiconductor processing. 2014, Vol 24, pp 254-259, issn 1369-8001, 6 p.Article

Defined micropatterns of platinum thin films by inductively coupled plasma etching using SF₆/Ar/O₂ mixture gasZHAO YAO; CONG WANG; SUNG, Ho-Kun et al.Materials science in semiconductor processing. 2014, Vol 27, pp 228-232, issn 1369-8001, 5 p.Article

Discharge cutting technology for specific crystallographic planes of monocrystalline siliconYE TIAN; MINGBO QUI; ZHIDONG LIU et al.Materials science in semiconductor processing. 2014, Vol 27, pp 546-552, issn 1369-8001, 7 p.Article

Effect of TiO₂ nanoparticle content in sol―gel derived TiO₂ paste on the photovoltaic properties of TiO₂ photoanode of dye-sensitized solar cellsMASHREGHI, A; DAVOUDI, F.Materials science in semiconductor processing. 2014, Vol 26, pp 669-676, issn 1369-8001, 8 p.Article

Effect of cadmium sulfide thickness on electron beam-deposited titania/cadmium sulfide nanocomposite filmsALI KAMEL MOHSIN; BIDIN, Noriah.Materials science in semiconductor processing. 2014, Vol 24, pp 208-214, issn 1369-8001, 7 p.Article

Effect of drying temperature on structural and electrical properties of PANI:PVDF composite thin films and their application as buffer layer for organic solar cellsSAÏDI, Sami; MANNAÏ, Aymen; DEROUICHE, Hassen et al.Materials science in semiconductor processing. 2014, Vol 19, pp 130-135, issn 1369-8001, 6 p.Article

Effect of nitrogen containing plasma on interface properties of sputtered ZrO₂ thin films on siliconRAO, Ashwath; DWIVEDI, Anshuman; GOSWAMI, Manish et al.Materials science in semiconductor processing. 2014, Vol 19, pp 145-149, issn 1369-8001, 5 p.Article

Effects of trivalent gadolinium and cobalt co-substitution on the crystal structure, electronic transport, and ferromagnetic properties of bismuth ferriteSONG, G. L; SU, J; MA, G. J et al.Materials science in semiconductor processing. 2014, Vol 27, pp 899-908, issn 1369-8001, 10 p.Article

Electrical transport properties of semiconducting chromium molybdenum diselenide single crystalsDESAI, Priyanka; PATEL, D. D; JANI, A. R et al.Materials science in semiconductor processing. 2014, Vol 24, pp 40-43, issn 1369-8001, 4 p.Article

Electrically-driven metal-insulator transition of vanadium dioxide thin films in a metal-oxide-insulator-metal device structureQIU, Dong-Hong; WEN, Qi-Ye; YANG, Qing-Hui et al.Materials science in semiconductor processing. 2014, Vol 27, pp 140-144, issn 1369-8001, 5 p.Article

Electrochemical behavior of nanostructured SnO₂ thin films in aqueous electrolyte solutionsVASANTH RAJ, D; PONPANDIAN, N; MANGALARAJ, D et al.Materials science in semiconductor processing. 2014, Vol 26, pp 55-61, issn 1369-8001, 7 p.Article

Electrochemical investigation of graphene/cerium oxide nanoparticles as an electrode material for supercapacitorsMAHDI ROBAT SARPOUSHI; NASIBI, Mahdi; MOHAMMAD ALI GOLOZAR et al.Materials science in semiconductor processing. 2014, Vol 26, pp 374-378, issn 1369-8001, 5 p.Article

Electronic structure and magnetic properties of the perovskite cerium manganese oxide from ab initio calculationsBERRI, Saadi; MAOUCHE, Djamel; IBRIR, Miloud et al.Materials science in semiconductor processing. 2014, Vol 26, pp 199-204, issn 1369-8001, 6 p.Article

Enhanced photocatalytic activity of sulfated silica-titania composites prepared by impregnation using ammonium persulfate solutionJUNBO ZHONG; JIANZHANG LI; JUN ZENG et al.Materials science in semiconductor processing. 2014, Vol 26, pp 62-68, issn 1369-8001, 7 p.Article

Enhanced photocatalytic degradation of an azo textile dye by using TiO₂/NiO coupled nanoparticles: Optimization of synthesis and operational key factorsESKANDARLOO, Hamed; BADIEI, Alireza; HAUG, Christian et al.Materials science in semiconductor processing. 2014, Vol 27, pp 240-253, issn 1369-8001, 14 p.Article

Enhancement of persistent photoconductivity of ZnO nanorods under polyvinyl alcohol encapsulationBAYAN, Sayan; MISHRA, Sheo K; SATPATI, Biswarup et al.Materials science in semiconductor processing. 2014, Vol 24, pp 200-207, issn 1369-8001, 8 p.Article

First principles study of the electronic structures and magnetic properties of transition metal-doped cubic indium nitrideDAHMANE, F; TADJER, A; DOUMI, B et al.Materials science in semiconductor processing. 2014, Vol 21, pp 66-73, issn 1369-8001, 8 p.Article

First-principles study of p-type nitrogen/aluminum co-doped zinc oxideLI HONGLIN; LV YINGBO; LI JINZHU et al.Materials science in semiconductor processing. 2014, Vol 27, pp 599-604, issn 1369-8001, 6 p.Article

Gaussian distribution of inhomogeneous barrier height in Au/n-Si (111) Schottky barrier diodes at low temperaturesDURMUS, Perihan; YILDIRIM, Mert.Materials science in semiconductor processing. 2014, Vol 27, pp 145-149, issn 1369-8001, 5 p.Article