The electrical and physical analysis of Pt gate/Al₂O₃/p-Si (100) with dual high-k gate oxide thickness for deep submicron complementary metal-oxide-semiconductor device with low power and high reliabilityLEE, Chihoon; SANG YONG NO; DA IL EOM et al.Journal of electronic materials. 2005, Vol 34, Num 8, pp 1104-1109, issn 0361-5235, 6 p.Article

Charge-storage effects in a metal-insulator-semi-conductor structure containing germanium nano-crystals formed by rapid thermal annealing of an electron-beam evaporated germanium layerHENG, C. L; TJIU, W. W; FINSTAD, T. G et al.Applied physics. A, Materials science & processing (Print). 2004, Vol 78, Num 8, pp 1181-1186, issn 0947-8396, 6 p.Article

FTIR spectroscopy of buried interfaces in molecular junctionsJUN, Yongseok; ZHU, X.-Y.Journal of the American Chemical Society. 2004, Vol 126, Num 41, pp 13224-13225, issn 0002-7863, 2 p.Article

Description of the frequency behaviour of metal-SiO₂-GaAs structure characteristics by electrical equivalent circuit with constant phase elementKOCHOWSKI, S; NITSCH, K.Thin solid films. 2002, Vol 415, Num 1-2, pp 133-137, issn 0040-6090Article

Electrical properties of MgO/p-diamond junction fabricated on homoepitaxial single-crystalline diamondLEE, Seungmock; ITO, Toshimichi.Diamond and related materials. 2002, Vol 11, Num 12, pp 1952-1961, issn 0925-9635, 10 p.Article

Physical structure and inversion charge at a semiconductor interface with a crystalline oxideMCKEE, R. A; WALKER, F. J; CHISHOLM, M. F et al.Science (Washington, D.C.). 2001, Vol 293, Num 5529, pp 468-471, issn 0036-8075Article

Instability evolution within a-SiNx film assessed through MIS structure under bias and temperature stressesÖZDEMIR, Orhan; ATILGAN, Ismail; KATIRCIOGLU, Bayram et al.Journal of non-crystalline solids. 2001, Vol 296, Num 1-2, pp 27-38, issn 0022-3093Article

Characterization of hot electron transmission tunneling through the gap potential in scanning hot electron microscopyZHANG, B. Y; FURUYA, K.Applied surface science. 2001, Vol 175-76, pp 294-298, issn 0169-4332Conference Paper

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Fowler-nordheim current oscillations analysis of metal/ultra-thin oxide/semiconductor structuresKHLIFI, Y; KASSMI, K; ROUBI, L et al.Physica status solidi. A. Applied research. 2000, Vol 182, Num 2, pp 737-753, issn 0031-8965Article

Si(Ge)/oxide-based heterostructures and their applications to optoelectronicsFUKATSU, S; KISHIMOTO, Y; ISHIKAWA, Y et al.Applied surface science. 2000, Vol 159-60, pp 472-480, issn 0169-4332Conference Paper

Charge carrier transport in Si/CaF₂ heterostructures controlled by forming biasMENARD, S; KHOLOD, A. N; LINIGER, M et al.Physica status solidi. A. Applied research. 2000, Vol 181, Num 2, pp 561-568, issn 0031-8965Article

Electrical modelling of Si/SiO₂ superlatticesOUISSE, T; LOANNOU-SOUGLERIDIS, V; KOUVATSOS, D et al.Journal of physics. D, Applied physics (Print). 2000, Vol 33, Num 21, pp 2691-2698, issn 0022-3727Article

Electrical properties of SiO₂-(n) GaAs interface on the basis of measurements of MIS structure capacitance and conductanceKOCHOWSKI, S; NITSCH, K; PASZKIEWICZ, R et al.Thin solid films. 1999, Vol 348, Num 1-2, pp 180-187, issn 0040-6090Article

Electrical behaviour of metal/a-C/Si and metal/CN/Si devicesEVANGELOU, E; KONOFAOS, N; LOGOTHETIDIS, S et al.Carbon (New York, NY). 1999, Vol 37, Num 5, pp 871-876, issn 0008-6223Conference Paper

Metal-oxide-semiconductor characteristics of tantalum oxide thin films grown by 172 nm radiationZHANG, J.-Y; BOYD, I. W.Journal of materials science letters. 1998, Vol 17, Num 17, pp 1507-1509, issn 0261-8028Article

Degradation of n⁺/p junction characteristics by aluminum contaminationITOGA, T; KOJIMA, H; HIRAIWA, A et al.Japanese journal of applied physics. 1997, Vol 36, Num 7A, pp 4431-4434, issn 0021-4922, 1Article

Structure and photoelectric properties of copper-phthalocyanine/lead telluride multilayer thin film prepared by laser ablation and thermal evaporationLEE, I; TABATA, H; MATSUMOTO, T et al.Japanese journal of applied physics. 1997, Vol 36, Num 8, pp 5156-5162, issn 0021-4922, 1Article

Interface properties of Si₃N₄/Si/n-GaAs metal-insulator-semiconductor structure using a Si interlayerPARK, D.-G; CHEN, Z; BOTCHKAREV, A. E et al.Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic properties. 1996, Vol 74, Num 3, pp 219-234, issn 1364-2812Article

Internal photoemission and photoconduction on GeO₂/Ge filmsOISHI, K; MATSUO, Y.Thin solid films. 1996, Vol 274, Num 1-2, pp 133-137, issn 0040-6090Article

Electronic properties of thin Au/nanoporous-Si/n-Si structuresDITTRICH, T; KLIEFOTH, K; SIEBER, I et al.Thin solid films. 1996, Vol 276, Num 1-2, pp 183-186, issn 0040-6090Conference Paper

Electrical characteristics of metal/cerium dioxide/silicon structuresNAKAZAWA, T; INOUE, T; SATOH, M et al.Japanese journal of applied physics. 1995, Vol 34, Num 2A, pp 548-553, issn 0021-4922, 1Article

Deposition and optical properties of amorphous hydrogenated Si_xC_y layersCHUMAKOV, A. A; BULKIN, P. V; SWART, P. L et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 29, Num 1-3, pp 151-153, issn 0921-5107Conference Paper

The electrical properties of sulfur-passivated and rapidly thermally annealed GaAs metal-oxide-semiconductor structures with the oxide layer grown anodicallyEFTEKHARI, G.Thin solid films. 1994, Vol 248, Num 2, pp 199-203, issn 0040-6090Article

Exact solutions of two-dimensional problems of a Schottky layer on the surface of a semiconductorEFANOV, A. V; THOMAS, J. G.Technical physics. 1993, Vol 38, Num 3, pp 188-192, issn 1063-7842Article