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Results 1 to 25 of 560

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Direct observation of the semimetal to semiconductor transition in crossed band gap superlattices at magnetic fields of up to 150 TBARNES, D. J; NICHOLAS, R. J; WARBURTON, R. J et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 1027-1030, issn 0038-1101Conference Paper

Realistic electromigration lifetime projection of VLSI interconnectsKAWASAKI, H; LEE, C; TAT-KWAN YU et al.Thin solid films. 1994, Vol 253, Num 1-2, pp 508-512, issn 0040-6090Conference Paper

Prediction of lateral barrier height in identically prepared Ni/n-type GaAs Schottky barrier diodesDOGAN, H; KORKUT, H; YILDIRIM, N et al.Applied surface science. 2007, Vol 253, Num 18, pp 7467-7470, issn 0169-4332, 4 p.Article

Schottky contacts on passivated GaAs(1 0 0) surfaces: barrier height and reactivityKAMPEN, T; SCHÜLLER, A; ZAHN, D. R. T et al.Applied surface science. 2004, Vol 234, Num 1-4, pp 341-348, issn 0169-4332, 8 p.Conference Paper

Stability and phase transition studies of Ga-pWSe2 Schottky diode by current-voltage-temperature methodMATHAI, Achamma John; PATEL, K. D; SRIVASTAVA, R et al.Thin solid films. 2010, Vol 518, Num 10, pp 2695-2700, issn 0040-6090, 6 p.Article

Thermal annealing effects on I-V-T characteristics of sputtered Cr/n-GaAs diodesKORKUT, H; YILDIRIM, N; TURUT, A et al.Physica. B, Condensed matter. 2009, Vol 404, Num 21, pp 4039-4044, issn 0921-4526, 6 p.Article

Chemistry and electronic properties of metal contacts on an organic molecular semiconductorHIROSE, Y; WU, C. I; ARISTOV, V et al.Applied surface science. 1997, Vol 113114, pp 291-298, issn 0169-4332Conference Paper

Ohmic I-V characteristics in semi-insulating semiconductor diodesJONES, B. K; SANTANA, J; MCPHERSON, M et al.Solid state communications. 1998, Vol 105, Num 9, pp 547-549, issn 0038-1098Article

Data processing for spectrum-images : extracting information from the data mountainPRUTTON, M; WILKINSON, D. K; KENNY, P. G et al.Applied surface science. 1999, Vol 144-45, pp 1-10, issn 0169-4332Conference Paper

Metal-semiconductor contacts : electronic propertiesMÖNCH, W.Surface science. 1994, Vol 299-300, Num 1-3, pp 928-944, issn 0039-6028Article

Effect of electro- and stress migration forces on the 1/fα noise of patterned thin metal filmsCOTTLE, J. G; KLONARIS, N.Thin solid films. 1994, Vol 253, Num 1-2, pp 513-517, issn 0040-6090Conference Paper

Luminescence up-conversion by Auger process at InP-AlInAs type II interfacesTITKOV, A; SEIDEL, W; ANDRE, J. P et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 1041-1044, issn 0038-1101Conference Paper

Studies of GaSb-capped InAs/AlSb quantum wells by resonant raman scatteringWAGNER, J; SCHMITZ, J; MAIER, M et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 1037-1040, issn 0038-1101Conference Paper

Scanning tunneling microscope study of nanosized metal-semiconductor contacts between ErSi2 nanoislands and Si(0 0 1) substrateSONG, J. Q; DING, T; LI, J et al.Surface science. 2010, Vol 604, Num 3-4, pp 361-365, issn 0039-6028, 5 p.Article

Characterization of contact resistance : the effect of non-zero metal resistance and contact sizeKIM, J. D; NAM, K. S; KOO, J. G et al.International journal of electronics. 1996, Vol 81, Num 3, pp 285-290, issn 0020-7217Article

Phase equilibria in In-Metal-As systems : Systematic trends in phase diagram topology and implications for the development of contact materials to InAsSWENSON, D.Journal of electronic materials. 1999, Vol 28, Num 7, pp 894-901, issn 0361-5235Article

Magnetotransport properties of MBE-grown magnetic superlattices of Mn-based intermetallics on GaAs heterostructuresTANAKA, M; HARBISON, J. P; SANDS, T et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 1031-1036, issn 0038-1101Conference Paper

Manufacturing chiral electromagnetic metamaterials by directional rolling of strained heterofilms : Artificial Chiral MaterialsNAUMOVA, E. V; PRINZ, V. Ya; GOLOD, S. V et al.Journal of optics. A, Pure and applied optics (Print). 2009, Vol 11, Num 7, issn 1464-4258, 074010.1-074010.5Article

Electronic transport in ambipolar silicon nanowiresCOLLI, A; PISANA, S; FASOLI, A et al.Physica status solidi. B. Basic research. 2007, Vol 244, Num 11, pp 4161-4164, issn 0370-1972, 4 p.Conference Paper

The Schottky barrier height of the rectifying Cu/pyronine-B/p-Si, Au/pyronine-B/p-Si, Sn/pyronine-B/p-Si and Al/pyronine-B/p-Si contactsCAKAR, M; TEMIRCI, C; TÜRÜT, A et al.Synthetic metals. 2004, Vol 142, Num 1-3, pp 177-180, issn 0379-6779, 4 p.Article

Nanometer-scale imaging of crystal deformation in LSI devicesIDE, T.IEEE international symposium on semiconductor manufacturing conference. 1999, pp 433-436, isbn 0-7803-5403-6Conference Paper

Energetics of metal/ceramic interfaces, metal-semiconductor Schottky contacts, and their relationshipLI, J.-G.Materials chemistry and physics. 1997, Vol 47, Num 2-3, pp 126-145, issn 0254-0584Article

Analysis of Au-, Al-, and Sn/Si semiconductor devices with thin oxide layer by photocurrent measurementsHAMDI, W. I.Thin solid films. 1997, Vol 310, Num 1-2, pp 177-183, issn 0040-6090Article

Bistable regime of surface magnetoplasma waves excitation at a semiconductor-metal interfaceOSTRIKOV, K. N; OSMAYEV, O. A.Surface science. 1995, Vol 344, Num 3, pp 283-292, issn 0039-6028Article

Electronic interactions at superconductor-semiconductor interfacesKROEMER, H; CHANH NGUYEN; HU, E. L et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 1021-1025, issn 0038-1101Conference Paper

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