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Results 1 to 25 of 2106

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Soldering diamonds into the diamond anvil cellDUNSTAN, D. J.Review of scientific instruments. 1991, Vol 62, Num 6, pp 1660-1661, issn 0034-6748Article

Materials for Advanced Metallization MAM 2007, the 16th European Workshop on Materials for Advanced Metallization 2007, Brugge, Belgium, March 4-7, 2007TRAVALY, Y; BEYER, G. P.Microelectronic engineering. 2007, Vol 84, Num 11, issn 0167-9317, 334 p.Conference Proceedings

Materials for advanced metallization MAM 2006. International workshopTORRES, J; MADAR, R; CHENEVIER, B et al.Microelectronic engineering. 2006, Vol 83, Num 11-12, pp 2036-2440, issn 0167-9317, 404 p.Conference Paper

Some aspects regarding the ceramic surface metallizationTONOIU, I; GEANTA, V; STEFANOIU, R et al.Advances in science and technology. 1999, pp C1035-C1041, isbn 88-86538-14-6, 5VolConference Paper

Metallisieren spritzgegossener Schaltungsträger = Metallization of molded interconnect devicesSTAMPFER, S; HALLSCHMID, N; EHRENSTEIN, G. W et al.Metalloberfläche. 1999, Vol 53, Num 5, pp 20-24, issn 0026-0797, 4 p.Article

The metallisation of inorganic substances under pressureBATSANOV, S. S.Russian journal of inorganic chemistry. 1991, Vol 36, Num 9, pp 1265-1269, issn 0036-0236Article

A scalable multilevel metallization with pillar interconnections and interlevel dielectric planarizationCASTEL, E. D; KULKARNI, V. D; RILEY, P. E et al.Journal of the Electrochemical Society. 1990, Vol 137, Num 2, pp 609-613, issn 0013-4651Article

Etat actuel de la métallisation chimico-galvanique des matières plastiques. RevueLIAKUMOVICH, A. G; FRIDMAN, B. S; ZIL'BERMAN, A. B et al.Plastičeskie massy. 1989, Num 2, pp 40-43, issn 0554-2901Article

L'essor de la métallisationMESSIN, Nicolas.Galvano organo traitements de surface. 2003, Num 728, pp 170-172, issn 0982-7870, 3 p.Article

All that glisters ..ARMSTRONG, D.SPC. Soap, perfumery and cosmetics. 1999, Vol 72, Num 10, pp 72-76, issn 0037-749X, 4 p.Article

Pasten und Pulver für die Elektronik = Pasts and powders for electronicsDORBATH, B; FRISCHKORN, H.-J; JESKE, G et al.Metall (Berlin, West). 1992, Vol 46, Num 3, pp 264-269, issn 0026-0746Article

A simulation model for electromigration in fine-line metallization of integrated circuits due to repetitive pulsed currentsHARRISON, J. W. JR.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2170-2179, issn 0018-9383Article

Conducting transition metal oxides: possibilities for RuO2 in VLSI metallizationKRUSIN-ELBAUM, L; WITTMER, M.Journal of the Electrochemical Society. 1988, Vol 135, Num 10, pp 2610-2614, issn 0013-4651Conference Paper

Materials for Advanced Metallization, MAM 2004. Proceedings of the European Workshop on Materials for Advanced Metallization 2004, Brussels, Belgium, March 7-10, 2004BEYER, Gerald; MAEX, Karen; DE POTTER, Muriel et al.Microelectronic engineering. 2004, Vol 76, Num 1-4, issn 0167-9317, 384 p.Conference Proceedings

Materials for Advanced Metallization, MAM 2003: Proceedings of the European Workshop on Materials for Advanced Metallization 2003, La Londe Les Maures, France, March 9-12, 2003THOMAS, Olivier; DALLAPORTA, Hervé; GAS, Patrick et al.Microelectronic engineering. 2003, Vol 70, Num 2-4, issn 0167-9317, 458 p.Conference Proceedings

High temperature metallisation for GaAs device processingMORGAN, D. V; THOMAS, H; ANDERSON, W. T et al.Physica status solidi. A. Applied research. 1988, Vol 110, Num 2, pp 531-536, issn 0031-8965Article

Research on applying direct plating to additive process for printed circuit boardCHIANG, Y.-Y; WANG, Y.-Y; WAN, C.-C et al.Journal of electronic materials. 2000, Vol 29, Num 8, pp 1001-1006, issn 0361-5235Article

Direktmetallisierung : Ein Verfahren zum Ersatz der herkömmlichen Kunststoffgalvanisierung = Direct metallisationHEMPELMANN, S; SMITH, H.Metalloberfläche. 1999, Vol 53, Num 3, pp 26-27, issn 0026-0797Article

Electromigration-induced failure in passivated aluminum-based metallizations : the dependence on temperature and current densityLI, C.-Y; BØRGESEN, P; KORHONEN, M. A et al.Applied physics letters. 1992, Vol 61, Num 4, pp 411-413, issn 0003-6951Article

Optical and electron beam lithography for electroless copper multilevel metallizationSHACHAM-DIAMAND, Y; ANGYAL, M; DEDHIA, A et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 2958-2961, issn 1071-1023Conference Paper

Ex-situ-Untersuchungen von molekularstrahl-abgeschiedenen Schichten auf Silicium-WafernGONZALES, P. P; BÜSCHEL, M; ZEHE, A et al.Wissenschaftliche Zeitschrift der Technischen Universität Dresden. 1990, Vol 39, Num 1, pp 145-150, issn 0043-6925Conference Paper

Analysis and characterization of In-film defects generated during sputter deposition of aluminum-alloy filmsABBURI, M; PAVATE, V; CHIANG, S et al.SPIE proceedings series. 1998, pp 132-137, isbn 0-8194-2714-4Conference Paper

Focused ion beam observation of grain structure and precipitates in aluminum thin filmsBARR, D. L; HARRIOTT, L. R; BROWN, W. L et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 3120-3125, issn 1071-1023Conference Paper

Selective metallization of n-type GaAs formed by projection-patterned excimer laser doping of SiSUGIOKA, K; TOYODA, K; GOMI, Y et al.Applied physics letters. 1989, Vol 55, Num 7, pp 619-621, issn 0003-6951, 3 p.Article

Nickelage chimique des plastiques ABS sans stabilisantKNYAZEVA, V. P.Plastičeskie massy. 1988, Num 9, pp 60-61, issn 0554-2901Article

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