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Influence of valence state, radius of ion and molar ratio of directing salt on WO3·0.33H2O crystal morphologyXIAOYU HE; CHENGUO HU; YI XI et al.Applied surface science. 2013, Vol 265, pp 810-816, issn 0169-4332, 7 p.Article

A study of thermal and dielectric behavior of manganese malonate dihydrate single crystalsMATHEW, Varghese; XAVIER, Lizymol; MAHADEVAN, C. K et al.Journal of thermal analysis and calorimetry. 2011, Vol 105, Num 1, pp 123-127, issn 1388-6150, 5 p.Article

Interplay between Nucleation, Crystallization, and the Gkass TransitionHÖHNE, Günther W. H; SCHICK, Christoph.Thermochimica acta. 2011, Vol 522, Num 1-2, issn 0040-6031, 213 p.Serial Issue

Atomistic computer simulation of explosive crystallization in pure silicon and germaniumALBENZE, Erik J; THOMPSON, Michael O; CLANCY, Paulette et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 9, pp 094110.1-094110.10, issn 1098-0121Article

Effects of additives in α- and ⊖-alumina: an ab initio studyWALLIN, Erik; ANDERSSON, Jon M; CHIRITA, Valeriu et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 49, pp 8971-8980, issn 0953-8984, 10 p.Article

Equilibrium point defect concentration in a growing silicon crystalTANAHASHI, K; INOUE, N; AKUTSU, N et al.Microelectronic engineering. 2001, Vol 56, Num 1-2, pp 133-137, issn 0167-9317Conference Paper

Global model of Czochralski silicon growth to predict oxygen content and thermal fluctuations at the melt-crystal interfaceEVSTRATOV, I. Yu; KALAEV, V. V; DORNBERGER, E et al.Microelectronic engineering. 2001, Vol 56, Num 1-2, pp 139-142, issn 0167-9317Conference Paper

On the rotation of non-epitaxy crystallites on single crystal substrateKUO, L.-Y; SHEN, P.Surface science. 1997, Vol 373, Num 1, pp L350-L356, issn 0039-6028Article

Design of agitated crystallizersNYVLT, J.Crystal research and technology (1979). 1994, Vol 29, Num 6, pp 895-899, issn 0232-1300Article

Precise control of growth site of silicon vapor-liquid-solid crystalsOKAJIMA, Y; ASAI, S; TERUI, Y et al.Journal of crystal growth. 1994, Vol 141, Num 3-4, pp 357-362, issn 0022-0248Article

Model study of two-dimensional protein aggregates in the nucleation stage of crystallizationHIGO, J; NAGAYAMA, K.The Journal of chemical physics. 1993, Vol 99, Num 11, pp 9156-9162, issn 0021-9606Article

Proceedings of the Symposium Fifty years of progress in Crystal GrowthFEIGELSON, R. S.Journal of crystal growth. 2004, Vol 264, Num 4, issn 0022-0248, 156 p.Conference Proceedings

Structure rearrangement of the Cd1-xZnxTe (0 < x < 0.1) meltsSHCHERBAK, L; FEYCHUK, P; PLEVACHUK, Yu et al.Journal of alloys and compounds. 2004, Vol 371, pp 186-190, issn 0925-8388, 5 p.Conference Paper

Growth of PZN crystals with improved optical quality using the BSFT techniqueERDEI, Sandor; SCHLECHT, Richard G; KOVACS, Laszlo et al.IEEE transactions on ultrasonics, ferroelectrics, and frequency control. 2003, Vol 50, Num 5, pp 481-486, issn 0885-3010, 6 p.Article

Relation between temperature gradient at growth interface and growth rate in Czochralski silicon examined by heat balance equationNATSUME, A; TANAHASHI, K; INOUE, N et al.Microelectronic engineering. 2001, Vol 56, Num 1-2, pp 129-132, issn 0167-9317Conference Paper

Decay of Cu adatom islands on Cu(111)ICKING-KONERT, G. S; GIESEN, M; IBACH, H et al.Surface science. 1998, Vol 398, Num 1-2, pp 37-48, issn 0039-6028Article

Growth of neodymium lanthanum heptamolybdate mixed crystals in silica gelsSUSHMA BHAT; KOTRU, P. N; KOUL, M. L et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 34, Num 2-3, pp 138-146, issn 0921-5107Article

Growth and thermal behavior of lead Iodate crystals grown in silica gelGIRASE, K. D; BHAVSAR, D. S.Journal of thermal analysis and calorimetry. 2011, Vol 105, Num 1, pp 187-190, issn 1388-6150, 4 p.Article

On two approaches to determination of the nucleation rate of a new phase in computer experimentsBAIDAKOV, Vladimir G; TIPEEV, Azat O.Thermochimica acta. 2011, Vol 522, Num 1-2, pp 14-19, issn 0040-6031, 6 p.Article

Recent research developments in crystal growth (Volume 4, Part II)Pandalai, S. G.2005, isbn 81-7895-172-X, 394 p., isbn 81-7895-172-XBook

Thermal decomposition of glucose and diamond formation under diamond-stable high pressure-high temperature conditionsYAMAOKA, Shinobu; SHAJI KUMAR, M. D; KANDA, Hisao et al.Diamond and related materials. 2002, Vol 11, Num 1, pp 118-124, issn 0925-9635Article

Some inclusions and defects in a synthetic diamond single crystalYIN, Long-Wei; ZOU, Zeng-Da; LI, Mu-Sen et al.Journal of crystal growth. 2000, Vol 218, Num 2-4, pp 455-458, issn 0022-0248Article

Proceedings of the Italian Crystal Growth Symposium, Naples, Italy, 7-9 September 1999FORNARI, Roberto; PAORICI, Carlo; ZAGARI, Adriana et al.Materials chemistry and physics. 2000, Vol 66, Num 2-3, issn 0254-0584, 226 p.Conference Proceedings

Hemi-cube algorithm and its application to thermal analysis of crystal growth furnaceJUNG, J; LEE, S; KAUH, S. K et al.Numerical heat transfer. Part A, Applications. 1998, Vol 34, Num 8, pp 873-885, issn 1040-7782Article

Solid state crystals : growth and characterization (Zakopane, 7-11 october 1996)Zmija, Jósef; Majchrowski, Andrzej; Rutkowski, Jarosłav et al.SPIE proceedings series. 1997, isbn 0-8194-2604-0, XIV, 312 p, isbn 0-8194-2604-0Conference Proceedings

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