Pascal and Francis Bibliographic Databases

Help

Search results

Your search

ct.\*:("Methods of deposition of films and coatings; film growth and epitaxy")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Origin

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 57729

  • Page / 2310

Export

Selection :

  • and

Temperature dependent in situ doping of ALD ZnOBAJI, Zs; LABADI, Z; HORVATH, Z. E et al.Journal of thermal analysis and calorimetry. 2011, Vol 105, Num 1, pp 93-99, issn 1388-6150, 7 p.Article

Ultrathin film growth of p-phenylene oligomers on alkali halide substratesKINTZEL, E. J; SMILGIES, D.-M; SKOFRONICK, J. G et al.Journal of crystal growth. 2006, Vol 289, Num 1, pp 345-350, issn 0022-0248, 6 p.Article

CMST-3: proceedings of the third Japan-US workshop on combinatorial material science and technology, Okinawa, Japan, 7-10 December, 2004KOINUMA, Hideomi; XIANG, Xiao-Dong; CHIKYOW, Toyohiro et al.Applied surface science. 2006, Vol 252, Num 7, issn 0169-4332, 211 p.Conference Proceedings

Advanced coatings on glass and plastics for large-area or high-volume productsPUETZ, Joerg; AEGERTER, Michel A; KURZ, Alexander et al.Thin solid films. 2006, Vol 502, Num 1-2, issn 0040-6090, 330 p.Conference Proceedings

Fabrication of Au nanostructures in the process of amalgam formation followed by Au-Hg alloy thermal decompositionKOBIELA, Tomasz; KASZKUR, Zbigniew; DUS, Ryszard et al.Thin solid films. 2005, Vol 478, Num 1-2, pp 152-158, issn 0040-6090, 7 p.Article

Formation of carbon-gold-sulfide conductive granular molecules by a cooperation process of plasma CVD and sputteringABUL KASHEM, Md; MORITA, Shinzo.Physical review B. Condensed matter and materials physics. 2004, Vol 69, Num 19, pp 193406.1-193406.4, issn 1098-0121Article

Formation of piezoelectric single-crystal nanorings and nanobowsHUGHES, William L; WANG, Zhong L.Journal of the American Chemical Society. 2004, Vol 126, Num 21, pp 6703-6709, issn 0002-7863, 7 p.Article

Preparation and characterization of Ce-doped BaTiO3 thin films by pulsed laser depositionCERNEA, M; IANCULESCU, A; MONNEREAU, O et al.Journal of materials science. 2004, Vol 39, Num 8, pp 2755-2759, issn 0022-2461, 5 p.Article

Growth of ultrathin rare-earth films studied by in situ x-ray diffractionNICKLIN, C. L; EVERARD, M. J; NORRIS, C et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 23, pp 235413.1-235413.10, issn 1098-0121Article

The growth kinetics of silicon nitride deposited from the SiH4-N2 reactant mixture in a remote plasmaKESSELS, W. M. M; VAN ASSCHE, F. J. H; VAN DEN OEVER, P. J et al.Journal of non-crystalline solids. 2004, Vol 338-40, pp 37-41, issn 0022-3093, 5 p.Conference Paper

X-ray reflectivity, photoelectron and nanoindentation studies of tetrahedral amorphous carbon (ta-C) films synthesized by double bend cathodic arcABBAS, G. A; PAPAKONSTANTINOU, P; MCLAUGHLIN, J. A et al.Diamond and related materials. 2004, Vol 13, Num 4-8, pp 1486-1490, issn 0925-9635, 5 p.Conference Paper

An investigation of carbon nitride films deposited at various N2/Ar ratios by the vacuum cathodic arc deposition methodZHOU, Z. M; XIA, L. F.Surface & coatings technology. 2003, Vol 172, Num 1, pp 102-108, issn 0257-8972, 7 p.Article

Parameter spaces for the nucleation and the subsequent growth of cubic boron nitride filmsKULISCH, Wilhelm; ULRICH, Sven.Thin solid films. 2003, Vol 423, Num 2, pp 183-195, issn 0040-6090, 13 p.Article

The growth mechanism of SiC film from polyimide LB filmBANGKUN JIN; PINGSHENG HE; YONGNING SHENG et al.The Journal of physics and chemistry of solids. 2003, Vol 64, Num 2, pp 339-342, issn 0022-3697, 4 p.Article

Organic thin films for optoelectronics devicesPATANE, S; ARENA, A; SAITTA, G et al.Thin solid films : application, preparation and characterization. 2003, pp 95-102, isbn 81-7736-133-3, 8 p.Book Chapter

Study of pretreatment methods for vacuum metallization of plasticsDE BRUYN, K; VAN STAPPEN, M; DE DEURWAERDER, H et al.Surface & coatings technology. 2003, Vol 163-64, pp 710-715, issn 0257-8972, 6 p.Conference Paper

Synthesis and properties of alkyl-substituted BEDT-TTF molecules for organic thin film devicesKATSUHARA, M; AOYAGI, I; MORI, T et al.Journal de physique. IV. 2003, Vol 114, pp 515-516, issn 1155-4339, 2 p.Conference Paper

Deposition of epitaxial ternary transition metal carbide filmsPALMQUIST, J.-P; BIRCH, J; JANSSON, U et al.Thin solid films. 2002, Vol 405, Num 1-2, pp 122-128, issn 0040-6090Article

Preparation of Y2O3-stabilized ZrO2 thin electrolyte films from Langmuir-Blodgett film precursors by means of surface ionsZOU GANG; FANG KUN; HE PINGSHENG et al.Journal of material chemistry. 2002, Vol 12, Num 10, pp 2998-3002, issn 0959-9428Article

Fabrication of photoluminescent Si-based layers by air optical breakdown near the silicon surfaceKABASHIN, A. V; MEUNIER, M.Applied surface science. 2002, Vol 186, Num 1-4, pp 578-582, issn 0169-4332Conference Paper

Cathodic arc deposition with activated anode (CADAA) for preparation of in situ doped thin solid filmsTAKIKAWA, Hirofumi; KIMURA, Keisaku; MIYANO, Ryuichi et al.Vacuum. 2002, Vol 65, Num 3-4, pp 433-438, issn 0042-207XConference Paper

Au particles supported on (110) anatase-TiO2GIORGIO, S; HENRY, C. R; PAUWELS, B et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2001, Vol 297, Num 1-2, pp 197-202, issn 0921-5093Article

Effects of titanium content on properties of sol-gel silica-titania films via organically modified silane precursorsWENXIU QUE; SUN, Z; LAM, Y. L et al.Journal of physics. D, Applied physics (Print). 2001, Vol 34, Num 4, pp 471-476, issn 0022-3727Article

Formation of YSi2-x layers on si by high-current Y ion implantationWANG, R. S; CHENG, X. Q; LAI, W. S et al.Journal of physics. D, Applied physics (Print). 2001, Vol 34, Num 16, pp 2465-2468, issn 0022-3727Article

Influence of buffer layer and 6H-SiC substrate polarity on the nucleation of AlN grown by the sublimation sandwich techniqueSHI, Y; XIE, Z. Y; LIU, L. H et al.Journal of crystal growth. 2001, Vol 233, Num 1-2, pp 177-186, issn 0022-0248Article

  • Page / 2310