Use of a langmuir probe for ECR plasma characterizationDALTRINI, A. M; MOSHKALYOV, S. A; RAMOS, A. C. S et al.Proceedings - Electrochemical Society. 2004, pp 375-380, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Enhanced high-current VBIC-modelWEI, C.-J; GERING, J; TKACHENKO, Y. A et al.Proceedings - Electrochemical Society. 2004, pp 63-68, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Controlled motion in microbridges of silicon carbide obtained by PECVDREHDER, G; CARRENO, M. N. P.Proceedings - Electrochemical Society. 2004, pp 125-130, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Suspended membranes made by silicon nitride deposited by ECR-CVDBIASOTTO, C; MONTE, B; NELI, R. R et al.Proceedings - Electrochemical Society. 2004, pp 119-124, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Micro-electromechanical simulation of a CMOS pressure sensorFRUETT, Fabiano; GARCIA, Vitor; PAVANELLO, Renato et al.Proceedings - Electrochemical Society. 2004, pp 101-106, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Electrochemical synthesis and structural analysis of BaTiO₃thin filmsNAGAZAWA, Silvia Yukie; IBRAHIM, Ricardo Cury.Proceedings - Electrochemical Society. 2004, pp 313-318, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Oxygen plasma etching mechanisms of resistVERDONCK, Patrick.Proceedings - Electrochemical Society. 2004, pp 387-392, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Unambiguous extraction of threshold voltage based on the ACM modelCUNHA, A. I. A; SCHNEIDER, M. C; GALUP-MONTORO, C et al.Proceedings - Electrochemical Society. 2004, pp 69-74, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Low-frequency noise in deep-submicron MOSFETsWIRTH, Gilson; KOH, Jeongwook; SILVA, Roberto Da et al.Proceedings - Electrochemical Society. 2004, pp 15-20, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

NanoMEMS systems on chipDE LOS SANTOS, Héctor J.Proceedings - Electrochemical Society. 2004, pp 83-94, issn 0161-6374, isbn 1-56677-416-0, 12 p.Conference Paper

Radiation-tolerant CMOS APS arraysDIAS DA SILVA, Vitor C; DORNELLES, Leandro T; CANAZIO, Pedro Paulo et al.Proceedings - Electrochemical Society. 2004, pp 195-200, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Test chip for qualification of packaging assembliesDELETAGE, J.-Y; FREMONT, H; PUIG, O et al.Proceedings - Electrochemical Society. 2004, pp 215-220, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Formation and stability of Ni(Pt)Si/poly-Si layered structureSANTOS, Regis E; DOI, Ioshiaki; TEIXEIRA, Ricardo C et al.Proceedings - Electrochemical Society. 2004, pp 259-264, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

An improved model for the triangular SOI misalignment test structureGIACOMINI, Renato; MARTINO, Joao Antonio.Proceedings - Electrochemical Society. 2004, pp 57-62, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Analysis of electrospinning of nanofibers as a function of polyacrylonitrile (PAN) concentrationMARTINEZ, R. D; DA SILVA, A. N. R; FURLAN, R et al.Proceedings - Electrochemical Society. 2004, pp 277-282, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Production, sintering characterization of Ba₂MgWO₆ceramics for ceramic components for planar RTD applicationsLAPS, Camila M; VASCONCELOS, Isabela B; SANTOS, Edval J. P et al.Proceedings - Electrochemical Society. 2004, pp 325-330, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Self-assembled polystyrene micro-spheres applied for photonic crystals and templates fabricationRAIMUNDO, Daniel S; FERNANDEZ, Francisco J. R; SALCEDO, Walter J et al.Proceedings - Electrochemical Society. 2004, pp 301-306, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

One mask step a-Si:H/a-SiO_xN_y thin film transistorALBERTIN, K. F; PEREYRA, I.Proceedings - Electrochemical Society. 2004, pp 75-80, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Electrothermal limitations on the current density of high-frequency bipolar transistorsNENADOVIC, N; NANVER, L. K; SLOTBOOM, J. W et al.Proceedings - Electrochemical Society. 2004, pp 3-8, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Behavior of graded channel SOI gate-all-around nMOSFET devices at high temperaturesGOMES DOS SANTOS, Carolina Davanzzo; PAVANELLO, Marcelo Antonio; MARTINO, Joao Antonio et al.Proceedings - Electrochemical Society. 2004, pp 9-14, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Birefringence characterization of TiO₂ thin films deposited by DC sputtering over tilted substratesPUERTAS DE ARAUJO, Hugo; DOS SANTOS, Sebastiao G; DE ALMEIDA VALLE, Marcio et al.Proceedings - Electrochemical Society. 2004, pp 207-212, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Formation of nickel silicides onto as-doped silicon using a thin Pt/Pd interlayerREIS, Ronaldo W; DOS SANTOS, Sebastiao G; DOI, Ioshiaki et al.Proceedings - Electrochemical Society. 2004, pp 357-362, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Extraction of MOSFET effective channel length and width based on the transconductance-to-current ratioCUNHA, A. I. A; SCHNEIDER, M. C; GALUP-MONTORO, C et al.Proceedings - Electrochemical Society. 2004, pp 33-38, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Evaluation of SRAMS reliability for space electronics using ultra short laser pulsesDARRACQ, Frédéric; LAPUYADE, Hervé; FOUILLAT, Pascal et al.Proceedings - Electrochemical Society. 2004, pp 227-232, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Simulation of basic circuits for implementing a single-electron stochastic associative memoryDO CARMO, H. C; GUIMARAES, J. G; NOBREGA, L. M et al.Proceedings - Electrochemical Society. 2004, pp 157-162, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper