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Application of phosphorus diffusion gettering process on upgraded metallurgical grade Si wafers and solar cellsXU, H. B; HONG, R. J; AI, B et al.Applied energy. 2010, Vol 87, Num 11, pp 3425-3430, issn 0306-2619, 6 p.Article

Light induced enhancement of minority carrier lifetime of chemically passivated crystalline siliconAOUIDA, S; BACHTOULI, N; BESSAIS, B et al.Applied surface science. 2013, Vol 274, pp 255-257, issn 0169-4332, 3 p.Article

Influencing factors on the formation of the low minority carrier lifetime zone at the bottom of seed-assisted cast ingotsGENXIANG ZHONG; QINGHUA YU; XINMING HUANG et al.Journal of crystal growth. 2014, Vol 402, pp 65-70, issn 0022-0248, 6 p.Article

Ambient stability of wet chemically passivated germanium wafer for crystalline solar cellsSWAIN, Bibhu P; TAKATO, Hidetaka; ZHENGXIN LIU et al.Solar energy materials and solar cells. 2011, Vol 95, Num 1, pp 84-88, issn 0927-0248, 5 p.Conference Paper

Minority carrier lifetime enhancement in multicrystalline silicon by means of a dual treatment based on porous silicon and sputter-deposition of TiO2:Cr passivation layersHAJJAJI, A; RABHA, M. Ben; JANENE, N et al.Applied surface science. 2012, Vol 258, Num 20, pp 8046-8048, issn 0169-4332, 3 p.Article

A study of mottling phenomenon on textured multicrystalline silicon wafers and its potential effects on solar cell performanceHONGYONG GONG; MIAO LI; LANG ZHOU et al.Materials science in semiconductor processing. 2014, Vol 26, pp 149-154, issn 1369-8001, 6 p.Article

Minority carrier lifetime in plasma-textured silicon wafers for solar cellsKUMARAVELU, G; ALKAISI, M. M; MACDONALD, D et al.Solar energy materials and solar cells. 2005, Vol 87, Num 1-4, pp 99-106, issn 0927-0248, 8 p.Conference Paper

Factors limiting minority carrier lifetime in solar grade silicon produced by the metallurgical routeOSINNIY, V; BOMHOLT, P; LARSEN, A. Nylandsted et al.Solar energy materials and solar cells. 2011, Vol 95, Num 2, pp 564-572, issn 0927-0248, 9 p.Article

Electrical characterization of proton irradiated p+-n-n+ Si diodeKIM, J. H; LEE, D. U; KIM, E. K et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 181-184, issn 0921-4526, 4 p.Conference Paper

Type II strained layer superlattice: A potential future IR solutionTIDROW, Meimei Z.Infrared physics & technology. 2009, Vol 52, Num 6, pp 322-325, issn 1350-4495, 4 p.Conference Paper

Comparison of charge-retention times in n- and p-type 4H-SiC MOS capacitors as non-volatile memory elementsCHEONG, K. Y; DIMITRIJEV, S; HAN, J et al.Journal of crystal growth. 2004, Vol 268, Num 3-4, pp 547-553, issn 0022-0248, 7 p.Conference Paper

Gettering improvements of minority-carrier lifetimes in solar grade siliconOSINNIY, V; NYLANDSTED LARSEN, A; HVIDSTEN DAHL, E et al.Solar energy materials and solar cells. 2012, Vol 101, pp 123-130, issn 0927-0248, 8 p.Article

The circuit point of view of the temperature dependent open circuit voltage decay of the solar cellKAVASOGLU, A. Sertap; KAVASOGLU, Nese; OKTIK, Sener et al.Solar energy. 2009, Vol 83, Num 9, pp 1446-1453, issn 0038-092X, 8 p.Article

A Process for Inline Minority Carrier Lifetime Monitoring for the Furnace Performing Denuded Zone FormationWU, Yung-Hsien; WANG, Chun-Yao; CHANG, Chih-Ming et al.IEEE transactions on semiconductor manufacturing. 2008, Vol 21, Num 2, pp 248-255, issn 0894-6507, 8 p.Article

Spatially Resolved Characterization of Silicon As-Cut Wafers with Photoluminescence ImagingGIESECKE, Johannes A; THE, Manuel; KASEMANN, Martin et al.Progress in photovoltaics (Print). 2009, Vol 17, Num 4, pp 217-225, issn 1062-7995, 9 p.Article

High efficiency screen-printed EFG Si solar cells through rapid thermal processing-induced bulk lifetime enhancementNAKAYASHIKI, K; MEEMONGKOLKIAT, V; ROHATGI, A et al.Progress in photovoltaics. 2005, Vol 13, Num 1, pp 17-25, issn 1062-7995, 9 p.Article

Effect of extended phosphorus diffusion gettering on chromium impurity in HEM multicrystalline siliconKHELIFATI, Nabil; BOUHAFS, Djoudi; BOUMAOUR, Messaoud et al.Materials science in semiconductor processing. 2012, Vol 15, Num 1, pp 56-60, issn 1369-8001, 5 p.Article

Minority carrier lifetime and diffusion length in Si1-x-yGexCy and Si1-yCy heterolayersSAMANTA, S. K; DALAPATI, G. K; CHATTERJEE, S et al.Applied surface science. 2004, Vol 224, Num 1-4, pp 283-287, issn 0169-4332, 5 p.Conference Paper

Steady state minority carrier lifetime and defect level occupation in thin film CdTe solar cellsZIMENG CHENG; DELAHOY, Alan E; ZHAOQIAN SU et al.Thin solid films. 2014, Vol 558, pp 391-399, issn 0040-6090, 9 p.Article

Bulk lifetime and efficiency enhancement due to gettering and hydrogenation of defects during cast multicrystalline silicon solar cell fabricationSHEORAN, Manav; UPADHYAYA, Ajay; ROHATGI, Ajeet et al.Solid-state electronics. 2008, Vol 52, Num 5, pp 612-617, issn 0038-1101, 6 p.Article

Si multicrystals grown by the Czochralski method with multi-seedsHOSHIKAWA, Takeshi; TAISHI, Toshinori; XINMING HUANG et al.Journal of crystal growth. 2007, Vol 307, Num 2, pp 466-471, issn 0022-0248, 6 p.Article

Correlation between solar cell efficiency and minority carrier lifetime for batch processed multicrystalline Si wafersJAYAKRISHNAN, R; GANDHI, Shreyans; SURATKAR, Prakash et al.Materials science in semiconductor processing. 2011, Vol 14, Num 3-4, pp 223-228, issn 1369-8001, 6 p.Article

Characterization of Plasma Etching Process Damage in HgCdTeGAUCHER, A; BAYLET, J; ROTHMAN, J et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3006-3014, issn 0361-5235, 9 p.Conference Paper

Investigation of radiation-induced defects in the electron irradiated power transistor structuresKORSHUNOV, F. P; BOGATYREV, Yu. V; LASTOVSKY, S. B et al.Vacuum. 2003, Vol 70, Num 2-3, pp 197-200, issn 0042-207X, 4 p.Conference Paper

Excellent passivation and low reflectivity with atomic layer deposited bilayer coatings for n-type silicon solar cellsLEE, Benjamin G; SHUO LI; VON GASTROW, Guillaume et al.Thin solid films. 2014, Vol 550, pp 541-544, issn 0040-6090, 4 p.Article

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