Dielectrics for nanosystems II (materials science, processing, reliability, and manufacturing)Misra, D; Iwai, H.Proceedings - Electrochemical Society. 2006, issn 0161-6374, isbn 1-56677-438-1, 1Vol, VIII-340 p, isbn 1-56677-438-1Conference Proceedings

ERYTHROCYTIC GLUCOSE-6-PHOSPHATE DEHYDROGENASE DEFICIENCY AMONGST NON TRIBAL POPULATION OF ORISSA.MISRA RC; MISRA D.1977; TROP. GEOGR. MED.; NETHERL.; DA. 1977; VOL. 29; NO 3; PP. 233-236; BIBL. 13 REF.Article

Nanocrystalline silicon quantum dot devicesODA, Shunri; MIZUTA, Hiroshi.Proceedings - Electrochemical Society. 2006, pp 147-155, issn 0161-6374, isbn 1-56677-438-1, 1Vol, 9 p.Conference Paper

Metal contamination from process materials used for wet cleaning of silicon waferSINHA, Drew.Proceedings - Electrochemical Society. 2006, pp 91-98, issn 0161-6374, isbn 1-56677-438-1, 1Vol, 8 p.Conference Paper

Adsorption of polyacrylic acids and their sodium salts on hydroxyapatite : Effect of relative molar massNATH MISRA, D.Journal of colloid and interface science. 1996, Vol 181, Num 1, pp 289-296, issn 0021-9797Article

Reaction of alizarin red S with hydroxyapatite : stoichiometry and surface effectMISRA, D. N.Colloids and surfaces. 1992, Vol 66, Num 3, pp 181-187, issn 0166-6622Article

A quasi-static analysis of open-ended coaxial linesMISRA, D. K.IEEE transactions on microwave theory and techniques. 1987, Vol 35, Num 10, pp 925-928, issn 0018-9480Article

Adsorption of low molecular weight poly(acrylic acid) on hydroxyapatite : role of molecular association and apatite dissolutionMISRA, D. N.Langmuir. 1991, Vol 7, Num 11, pp 2422-2424, issn 0743-7463Article

Adsorption on hydroxyapatite: role of hydrogen bonding and interphase couplingMISRA, D. N.Langmuir. 1988, Vol 4, Num 4, pp 953-958, issn 0743-7463Article

RAPID ANALYSIS OF SILLIMANITEABEDIN J; MISRA D; BANERJEE S et al.1981; TRANS. INDIAN CERAM. SOC.; ISSN 0371-750X; IND; DA. 1981; VOL. 40; NO 5; PP. 180-182; BIBL. 6 REF.Article

Interaction of cupric ions with calcium hydroxylapatiteMISRA, D. N.Materials research bulletin. 1988, Vol 23, Num 11, pp 1545-1549, issn 0025-5408, 5 p.Article

Adsorption of potassium N-phenylglycinate on hydroxyapatite : role of solvents and ionic chargeMISRA, D. N.Colloids and surfaces. A, Physicochemical and engineering aspects. 1996, Vol 108, Num 2-3, pp 277-285, issn 0927-7757Article

Adsorption of zinc 3,3-dimethylacrylate and 3,3-dimethylacrylic acid on hydroxyapatite from solution: reversibility and variability of isothermsMISRA, D. N.Journal of colloid and interface science. 1990, Vol 135, Num 2, pp 363-373, issn 0021-9797, 11 p.Article

A study on coaxial line excited monopole probes for in situ permittivity measurementsMISRA, D. K.IEEE transactions on instrumentation and measurement. 1987, Vol 36, Num 4, pp 1015-1019, issn 0018-9456Article

Charge trapping in high-k gate dielectrics : A recent understandingMISRA, D; CHOWDHURY, N. A.Proceedings - Electrochemical Society. 2006, pp 311-328, issn 0161-6374, isbn 1-56677-438-1, 1Vol, 18 p.Conference Paper

New theory of effective work functions at metal/high-k dielectric interfaces - : Application to metal/high-k HfO₂ and La₂O₃ dielectric interfacesSHIRAISHI, Kenji; NAKAYAMA, Takashi; NARA, Yasuo et al.Proceedings - Electrochemical Society. 2006, pp 25-40, issn 0161-6374, isbn 1-56677-438-1, 1Vol, 16 p.Conference Paper

HfAlO_x and HfSiO_x based dielectrics for future dram applicationHEITMANN, Johannes; AVELLAN, Alejandro; BOESCKE, Tim et al.Proceedings - Electrochemical Society. 2006, pp 217-223, issn 0161-6374, isbn 1-56677-438-1, 1Vol, 7 p.Conference Paper

Copper diffusion and corrosion behavior through the hillock defect found beneath the weak SiN dielectric barrier in dual damascene processKIM, Sangchul; SHIM, Cheonman; HONG, Jiho et al.Proceedings - Electrochemical Society. 2006, pp 237-241, issn 0161-6374, isbn 1-56677-438-1, 1Vol, 5 p.Conference Paper

Improved performance with low temperature silicon nitride spacer processREDDY, Chandra M; ANDERSON, Steven G. H.Proceedings - Electrochemical Society. 2003, pp 241-248, issn 0161-6374, isbn 1-56677-347-4, 8 p.Conference Paper

A review of defect generation in the SiO₂ and at its interface with SIZHANG, J. F.Proceedings - Electrochemical Society. 2003, pp 262-290, issn 0161-6374, isbn 1-56677-347-4, 29 p.Conference Paper

Atomistic characterization of radical nitridation process on Si(100) surfacesYASUDA, Yukio; SAKAI, Akira; ZAIMA, Shigeaki et al.Proceedings - Electrochemical Society. 2003, pp 495-506, issn 0161-6374, isbn 1-56677-347-4, 12 p.Conference Paper

A neutron reflectivity study of silicon oxide thin filmsBERTAGNA, Valérie; MENELLE, Alain; PETITDIDIER, Sébastien et al.Proceedings - Electrochemical Society. 2003, pp 525-532, issn 0161-6374, isbn 1-56677-347-4, 8 p.Conference Paper

Modeling and electrical characterization of MOS structures with ultra thin gate oxideCLERC, R; GHIBAUDO, G.Proceedings - Electrochemical Society. 2003, pp 551-572, issn 0161-6374, isbn 1-56677-347-4, 22 p.Conference Paper

Dipoles in SiO₂: Border traps or not?FLEETWOOD, D. M; RASHKEEV, S. N; LU, Z. Y et al.Proceedings - Electrochemical Society. 2003, pp 291-307, issn 0161-6374, isbn 1-56677-347-4, 17 p.Conference Paper

Neurotransistors for biomedical nanotechnologyMENEZES, A. J; KAPOOR, V. J.Proceedings - Electrochemical Society. 2003, pp 38-47, issn 0161-6374, isbn 1-56677-346-6, 10 p.Conference Paper