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Unforeseen properties of MnAs epilayers grown on GaAs semiconductorRACHE SALLES, B; VIDAL, F; ETGENS, V. H et al.Physica. B, Condensed matter. 2009, Vol 404, Num 18, pp 2684-2688, issn 0921-4526, 5 p.Conference Paper

Fe/MnAs bilayers: Magnetic anisotropy and the role of the interfaceALEJANDRO, G; MILANO, J; STEREN, L. B et al.Physica. B, Condensed matter. 2012, Vol 407, Num 16, pp 3161-3164, issn 0921-4526, 4 p.Article

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Nonamer Water Cluster Encapsulated in a Heterometallic Supramolecular ComplexDI SUN; WANG, Dan-Feng; NA ZHANG et al.Crystal growth & design. 2010, Vol 10, Num 12, pp 5031-5033, issn 1528-7483, 3 p.Article

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Magnetic and microstructural properties type-B MnAs grains grown on GaAs substrateHYOUNJONG KIM; DERESSA, Gemechu; HYOUNGSEAK JEONG et al.Solid state communications. 2014, Vol 193, pp 16-19, issn 0038-1098, 4 p.Article

Magnetic CrX and MnX (X = Si, Ge, and As) nanowires: Stability enhancement and linearizationBALA, Anu; SINGH, Poorva; NAUTIYAL, Tashi et al.Journal of alloys and compounds. 2013, Vol 547, pp 138-146, issn 0925-8388, 9 p.Article

The isothermal variation of the entropy (ΔS_T) may be miscalculated from magnetization isotherms in some cases: MnAs and Gd₅Ge₂Si₂ compounds as examplesCARVALHO, A. Magnus G; COELHO, A. A; VON RANKE, P. J et al.Journal of alloys and compounds. 2011, Vol 509, Num 8, pp 3452-3456, issn 0925-8388, 5 p.Article

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Formation and properties of MnAs magnetic nanoscaled dots on sulfur-passivated semiconductor substratesKUBO, K; KANAI, K; OKABAYASHI, J et al.Journal of crystal growth. 2007, Vol 301-302, pp 619-622, issn 0022-0248, 4 p.Conference Paper

Fabrication, structural and magnetic properties of InAlMnAs and InAlAs:MnAs granular thin filmsYOKOYAMA, M; OHYA, S; TANAKA, M et al.Journal of crystal growth. 2007, Vol 301-302, pp 627-630, issn 0022-0248, 4 p.Conference Paper

First order phase transition in MnAs nanodisksJENICHEN, B; KAGANER, V. M; TAKAGAKI, Y et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 8, pp 2772-2777, issn 1862-6300, 6 p.Conference Paper

Growth and magnetic properties of epitaxial MnAs/NiAs/MnAs heterostructures grown on exact GaAs(111)B substratesNAKANE, R; KONDO, J; YUAN, M. W et al.Journal of crystal growth. 2005, Vol 278, Num 1-4, pp 649-654, issn 0022-0248, 6 p.Conference Paper

Spin-polarized tunneling in fully epitaxial semiconductor-based magnetic tunnel junctionsTANAKA, M; HIGO, Y; SUGAHARA, S et al.Journal of superconductivity. 2003, Vol 16, Num 2, pp 241-248, issn 0896-1107, 8 p.Article

Growth and magnetic properties of (Ga, Mn)As as digital ferromagnetic heterostructuresKAWAKAMI, R. K; JOHNSTON-HALPERIN, E; CHEN, L. F et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 209-212, issn 0921-5107Conference Paper

Characterization of GaAs on MnZn ferrite with a MnAs buffer layerITO, S; FUJIOKA, H; KIWATA, H et al.Journal of crystal growth. 2002, Vol 237-39, pp 1466-1470, issn 0022-0248, 2Conference Paper

MBE growth process of ferromagnetic MnAs on Si(111) substratesNAZMUL, Ahsan M; BANSHCHIKOV, A. G; SHIMIZU, H et al.Journal of crystal growth. 2001, Vol 227-28, pp 874-881, issn 0022-0248Conference Paper