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New method of drift mobility evaluation in μc-Si:H, basic idea and comparison with time-of-flightJUSKA, G; GENEVICIUS, K; VILIUNAS, M et al.Journal of non-crystalline solids. 2000, Vol 266-69, pp 331-335, issn 0022-3093, 5 p., aConference Paper
Hole drift mobilities in the glassy state of arylaldehyde and arylketone hydrazonesNISHIMURA, K; INADA, H; KOBATA, T et al.Molecular crystals and liquid crystals (1991). 1992, Vol 216-8, pp 235-242, issn 1056-8816Conference Paper
Limiting field strength and electron swarm coefficients of the CF3I-SF6 gas mixtureDE URQUIJO, J; MITRANI, A; RUIZ-VARGAS, G et al.Journal of physics. D, Applied physics (Print). 2011, Vol 44, Num 34, issn 0022-3727, 342001.1-342001.3Article
The change of transport mechanism in μc-Si:H films induced by H2-diluted silane plasmaSHAOYUN HUANG; LI WANG; GANGULY, Gautam et al.Journal of non-crystalline solids. 2000, Vol 266-69, pp 347-351, issn 0022-3093, 5 p., aConference Paper
Modeling of Spatially-Dispersive Wire Media: Transport Representation, Comparison With Natural Materials, and Additional Boundary ConditionsHANSON, George W; FORATI, Ebrahim; SILVEIRINHA, Mário G et al.IEEE transactions on antennas and propagation. 2012, Vol 60, Num 9, pp 4219-4232, issn 0018-926X, 14 p.Article
Analysis of the current conduction in poly-Si thin film transistorsZHEN ZHU; JUNHAO CHU.Semiconductor science and technology. 2013, Vol 28, Num 1, issn 0268-1242, 015017.1-015017.6Article
New method of definition of mobility of nonequilibrium carriers in semiconductorsABDULLAEV, A. A; ALIEV, A. R; KAMILOV, I. K et al.Physica. B, Condensed matter. 2005, Vol 357, Num 3-4, pp 248-252, issn 0921-4526, 5 p.Article
Monte Carlo investigation of drift and diffusion in semiconductor superlattices in the Wannier-Stark regimeROSINI, Marcello; REGGIANI, Lino.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 19, pp 195304.1-195304.7, issn 1098-0121Article
Characterisation of single crystal CVD diamond particle detectors for hadron physics experimentsPOMORSKI, M; BERDERMANN, E; CIOBANU, M et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 11, pp 2199-2205, issn 0031-8965, 7 p.Conference Paper
Mathematical model of a biosensor with multilayer charged membraneROSSOKHATY, V; ROSSOKHATA, N.Computer physics communications. 2002, Vol 147, Num 1-2, pp 366-369, issn 0010-4655, 4 p.Conference Paper
Hole mobility in Ge:Ga far-infrared photoconductive semiconductors at low temperaturesHIROMOTO, N; FUJIWARA, M.Japanese journal of applied physics. 1996, Vol 35, Num 9A, pp 4685-4688, issn 0021-4922, 1Article
Analysis of the linearized energy and momentum balance equations of the single electron gas transport modelLOECHELT, G. H; BLAKEY, P. A; KUNTAL JOARDAR et al.Journal of applied physics. 1993, Vol 73, Num 8, pp 3835-3840, issn 0021-8979Article
The low-field Hall mobility of an amorphous Hubbard modelLIU, K. L.Canadian journal of physics (Print). 1993, Vol 71, Num 7-8, pp 351-359, issn 0008-4204Article
Exploring the limits of superlattice miniband engineering using inverse scatteringROURKE, D. E; WILKINSON, P. B; FROMHOLD, T. M et al.Semiconductor science and technology. 2004, Vol 19, Num 4, pp S91-S93, issn 0268-1242Conference Paper
Ozone sensors based on WO3: a model for sensor drift and a measurement correction methodALIWELL, S. R; HALSALL, J. F; PRATT, K. F. E et al.Measurement science & technology (Print). 2001, Vol 12, Num 6, pp 684-690, issn 0957-0233Article
Electron drift mobility in porous TiO2 (anatase)DITTRICH, T; LEBEDEV, E. A; WEIDMANN, J et al.Physica status solidi. A. Applied research. 1998, Vol 165, Num 2, pp R5-R6, issn 0031-8965Article
Classical and quantum motion of charged particles in the vicinity of neutral surface of a magnetic fieldBULANOV, S; LAZZARO, E; SAKAI, J.-I et al.Journal of the Physical Society of Japan. 1997, Vol 66, Num 12, pp 3696-3699, issn 0031-9015Article
Transient photocurrent studies on amorphous and β-rhombohedral boronTAKEDA, M; KIMURA, K; MURAYAMA, K et al.Journal of solid state chemistry (Print). 1997, Vol 133, Num 1, pp 201-204, issn 0022-4596Conference Paper
A new deposition parameter to control the carrier drift mobility in a-Si:HGANGULY, G; MATSUDA, A.Journal of non-crystalline solids. 1996, Vol 198200, pp 1003-1006, issn 0022-3093, 2Conference Paper
Onset of the Gunn effect in semiconductors : Bifurcation analysis and numerical simulationsKINDELAN, M; HIGUERA, F. J; BONILLA, L. L et al.Zeitschrift für angewandte Mathematik und Mechanik. 1996, Vol 76, pp 575-576, issn 0044-2267, SUP2Conference Paper
Positron mobility in polyethylene in the 60-400 K temperature rangeBRUSA, R. S; DUARTE NAIA, M; MARGONI, D et al.Applied physics. A, Materials science & processing (Print). 1995, Vol 60, Num 5, pp 447-453, issn 0947-8396Article
Charge transport in solid nitrogenSTORCHAK, B; BREWER, J. H; MORRIS, G. D et al.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1995, Vol 72, Num 2, pp 241-249, issn 0958-6644Article
Hole transport in liquid crystalline media. II: Hole drit mobilities of copolymers of acrylates with side-chain mesogens and dimeric carbazolesIKEDA, T; MOCHIZUKI, H; SISIDO, M et al.Journal of applied physics. 1991, Vol 70, Num 7, pp 3696-3702, issn 0021-8979Article
Regeneration of stochastic processes : an inverse methodGHASEMI, F; PEINKE, J; SAHIMI, M et al.The European physical journal. B, Condensed matter physics. 2005, Vol 47, Num 3, pp 411-415, issn 1434-6028, 5 p.Article
Mathematical problems in semiconductor physics (Cetraro, 15-22 June 2000)Anile, A.M; Allegretto, W; Ringhofer, C et al.Lecture notes in mathematics. 2003, issn 0075-8434, isbn 3-540-40802-9, X, 141 p, isbn 3-540-40802-9Conference Proceedings