Molecular beam epitaxy of c-plane wurtzite GaN on nitridized a-plane β-Ga₂O₃VILLORA, Encarnacion G; SHIMAMURA, Kiyoshi; AOKI, Kazuo et al.Thin solid films. 2006, Vol 500, Num 1-2, pp 209-213, issn 0040-6090, 5 p.Article

Growth of InN films by RF plasma-assisted MBE and cluster beam epitaxyCHEN, Tai-Chou P; THOMIDIS, C; ABELL, J et al.Journal of crystal growth. 2006, Vol 288, Num 2, pp 254-260, issn 0022-0248, 7 p.Conference Paper

Influence of growth conditions and surface reaction byproducts on GaN grown via metal organic molecular beam epitaxy : Toward an understanding of surface reaction chemistryPRITCHETT, David; HENDERSON, Walter; BURNHAM, Shawn D et al.Journal of electronic materials. 2006, Vol 35, Num 4, pp 562-567, issn 0361-5235, 6 p.Article

ZnO growth on Si with low-temperature CdO and ZnO buffer layers by molecular-beam epitaxyXIU, F. X; YANG, Z; ZHAO, D. T et al.Journal of electronic materials. 2006, Vol 35, Num 4, pp 691-694, issn 0361-5235, 4 p.Article

High-quality large-area MBE HgCdTe/SiPETERSON, J. M; FRANKLIN, J. A; REDDY, M et al.Journal of electronic materials. 2006, Vol 35, Num 6, pp 1283-1286, issn 0361-5235, 4 p.Conference Paper

In-situ spectroscopic study of the As and Te on the Si (112) surface for high-quality epitaxial layersJAIME-VASQUEZ, M; MARTINKA, M; JACOBS, R. N et al.Journal of electronic materials. 2006, Vol 35, Num 6, pp 1455-1460, issn 0361-5235, 6 p.Conference Paper

Effect of the low-temperature buffer thickness on quality of insb grown on GaAs substrate by molecular beam epitaxyWU, S. D; GUO, L. W; LI, Z. H et al.Journal of crystal growth. 2005, Vol 277, Num 1-4, pp 21-25, issn 0022-0248, 5 p.Article

Gaas facet formation and progression during MBE overgrowth of patterned mesasATKINSON, P; RITCHIE, D. A.Journal of crystal growth. 2005, Vol 278, Num 1-4, pp 482-487, issn 0022-0248, 6 p.Conference Paper

Two stages of post-growth recovery in molecular beam epitaxy: a surface X-ray diffraction studyKAGANER, Vladimir M; BRAUN, Wolfgang; JENICHEN, Bernd et al.Surface science. 2004, Vol 560, Num 1-3, pp 88-102, issn 0039-6028, 15 p.Article

Controlling molecular motion on the surface by electric field gradient during molecular beam epitaxy of liquid crystal ultrathin filmsSHIMADA, T; NAGAHORI, M; KOMA, A et al.Surface science. 2004, Vol 564, Num 1-3, pp L263-L269, issn 0039-6028Article

Heteroepitaxial growth of LaAlO₃ films on Si (100) by laser molecular beam epitaxyXIANG, W. F; LU, H. B; CHEN, Z. H et al.Journal of crystal growth. 2004, Vol 271, Num 1-2, pp 165-170, issn 0022-0248, 6 p.Article

MBE growth of ZnSSeO alloy using ZnS as a sulfur sourceNABETANI, Y; ITO, Y; MUKAWA, T et al.Physica status solidi. B. Basic research. 2004, Vol 241, Num 3, pp 595-598, issn 0370-1972, 4 p.Conference Paper

Advances in heteroepitaxy of oxides on siliconYU, Z; LIANG, Y; FINDER, J et al.Thin solid films. 2004, Vol 462-63, pp 51-56, issn 0040-6090, 6 p.Conference Paper

Influence of an edge diffusion on island formation and scaling in molecular beam epitaxyLEE, Sang B; LEE, Chun W.Journal of the Physical Society of Japan. 2003, Vol 72, Num 8, pp 2000-2007, issn 0031-9015, 8 p.Article

Structural properties of CdO layers grown on GaAs (001) substrates by metalorganic molecular beam epitaxyKIM, Bong-Joong; OK, Y.-W; SEONG, T.-Y et al.Journal of crystal growth. 2003, Vol 252, Num 1-3, pp 219-225, issn 0022-0248, 7 p.Article

Chemical beam epitaxial growth of GaInP using TBP, TIPGa and EDMInRYU, H. H.Journal of materials science. 2003, Vol 38, Num 4, pp 683-687, issn 0022-2461, 5 p.Article

Growth of PTCDA crystals on H:Si(111) surfacesCHEN, Q; RADA, T; BITZER, Th et al.Surface science. 2003, Vol 547, Num 3, pp 385-393, issn 0039-6028, 9 p.Article

In situ scanning tunneling microscopy of InAs quantum dots on GaAs(001) during molecular beam epitaxial growthBELL, G. R; PRISTOVSEK, M; TSUKAMOTO, S et al.Surface science. 2003, Vol 544, Num 2-3, pp 234-240, issn 0039-6028, 7 p.Article

Accuracy of the in situ determination of the CdZnTe temperature by ellipsometry before the growth of HgCdTe by MBEBADANO, Giacomo; GARLAND, James W; SIVANANTHAN, S et al.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 571-575, issn 0022-0248, 5 p.Conference Paper

Characterization of epitaxial Si_1-yC_y layers on Si(001) grown by gas-source molecular beam epitaxyABE, Katsuya; YAMADA, Akira; KONAGA, Makoto et al.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 681-684, issn 0022-0248, 4 p.Conference Paper

Microstructure of epitaxial CuGaS₂ on Si(111)CIESLAK, J; METZNER, H; HAHN, Th et al.The Journal of physics and chemistry of solids. 2003, Vol 64, Num 9-10, pp 1777-1780, issn 0022-3697, 4 p.Conference Paper

Structural properties of MBE grown Cu(In, Ga)S₂ layers on SiMETZNER, H; HAHN, Th; CIESLAK, J et al.The Journal of physics and chemistry of solids. 2003, Vol 64, Num 9-10, pp 1491-1494, issn 0022-3697, 4 p.Conference Paper

Microstructure and thermal stability of aluminum nitride thin films deposited at low temperature on siliconHARRIS, K. K; GILA, B. P; DEROACHES, J et al.Journal of the Electrochemical Society. 2002, Vol 149, Num 2, pp G128-G130, issn 0013-4651Article

Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxyLU, L. W; FONG, W. K; ZHU, C. F et al.Journal of crystal growth. 2002, Vol 234, Num 1, pp 99-104, issn 0022-0248Article

Temperature control in InGaAs-based quantum well structures grown by molecular beam epitaxy on GaAs (100) and GaAs (111)B substratesHERNANDO, J; TIJERO, J. M. G; SANCHEZ DE ROJAS, J. L et al.Journal of crystal growth. 2002, Vol 246, Num 1-2, pp 1-8, issn 0022-0248Article